机构

• 近代物理研究所 [5]
• 上海微系统与信息技术... [4]
• 半导体研究所 [1]

采集方式

• OAI收割 [10]

内容类型

• 期刊论文 [6]
• 会议论文 [4]

发表日期

• 2017 [1]
• 2016 [1]
• 2015 [1]
• 2014 [3]
• 2011 [4]

学科主题

• 半导体物理 [1]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Quantum confinement modulation on the performance of nanometer thin body GaSb/InAs tunnel field-effect transistors 期刊论文  OAI收割 Journal of Applied Physics, 2017, 卷号: 121, 期号: 22, 页码: 1-5 作者:  Zhi Wang;  Liwei Wang;  Yunfei En;  Xiang-Wei Jiang 收藏  |  浏览/下载：26/0  |  提交时间：2018/06/15 Monte-Carlo prediction of single-event characteristics of 65 nm CMOS SRAM under hundreds of MeV/n heavy-ions in space 会议论文  OAI收割 作者:  Zhang, Zhangang;  Lei, Zhifeng;  En, Yunfei;  Liu, Jie;  IEEE   |  收藏  |  浏览/下载：26/0  |  提交时间：2019/03/27 single event upset  static random access memory  Monte-Carlo  secondary electron  nuclear reaction   Single Event Effects in COTS Ferroelectric RAM Technologies 会议论文  OAI收割 作者:  Zhang, Zhangang;  Lei, Zhifeng;  Yang, Zhenlei;  Wang, Xiaohui;  Wang, Bin   |  收藏  |  浏览/下载：33/0  |  提交时间：2018/08/20 Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bulk Technologies 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 卷号: 61, 页码: 1459-1467 作者:  Luo, Jie;  Yao, Huijun;  Sun, Youmei;  Xi, Kai;  Geng, Chao   |  收藏  |  浏览/下载：28/0  |  提交时间：2018/07/05 Bragg Peak  Ion Range  Silicon-on-insulator  Single Event Upset   Supply Voltage Dependence of Single Event Upset Sensitivity in Diverse SRAM Devices 会议论文  OAI收割 作者:  Su, Hong;  Zhang, Zhangang;  Lei, Zhifeng;  En, Yunfei;  Huang, Yun   |  收藏  |  浏览/下载：40/0  |  提交时间：2018/08/20 single event upset  supply voltage  static random access memeory  critical charge   Supply Voltage Dependence of Single Event Upset Sensitivity in Diverse SRAM Devices 会议论文  OAI收割 作者:  Liu, Tianqi;  Ji, CY;  En, YF;  Huang, Yun;  En, Yunfei   |  收藏  |  浏览/下载：34/0  |  提交时间：2018/08/20 single event upset  supply voltage  static random access memeory  critical charge   Effect of channel width on ESD characteristics of SOI MOS device 期刊论文  OAI收割 ICQR2MSE 2011 - Proceedings of 2011 International Conference on Quality, Reliability, Risk, Maintenance,, 2011, 页码: 469-471 He, Yujuan; En, Yunfei; Luo, Hongwei; Xiao, Qingzhong 收藏  |  浏览/下载：14/0  |  提交时间：2012/08/22 Effect of gate bias on ESD characteristics in NMOS device 期刊论文  OAI收割 Proceedings - International Symposium on Advanced Packaging Materials.APM 2011 Proceedings - 2011 International Symposium on Advanced Packaging Materials, 2011, 页码: 360-362 He, Yujuan; En, Yunfei; Luo, Hongwei; Xiao, Qingzhong 收藏  |  浏览/下载：18/0  |  提交时间：2012/08/22 Effect of channel width on ESD characteristics of SOI MOS device 期刊论文  OAI收割 ICQR2MSE 2011 - Proceedings of 2011 International Conference on Quality, Reliability, Risk, Maintenance,, 2011, 期号: 0, 页码: 469-471 He, Yujuan; En, Yunfei; Luo, Hongwei; Xiao, Qingzhong 收藏  |  浏览/下载：19/0  |  提交时间：2012/08/22 Effect of gate bias on ESD characteristics in NMOS device 期刊论文  OAI收割 Proceedings - International Symposium on Advanced Packaging Materials.APM 2011 Proceedings - 2011 International Symposium on Advanced Packaging Materials, 2011, 期号: 0, 页码: 360-362 He, Yujuan; En, Yunfei; Luo, Hongwei; Xiao, Qingzhong 收藏  |  浏览/下载：36/0  |  提交时间：2012/08/22