机构

• 半导体研究所 [10]
• 金属研究所 [2]
• 新疆理化技术研究所 [2]
• 物理研究所 [1]
• 微电子研究所 [1]

采集方式

• OAI收割 [13]
• iSwitch采集 [3]

内容类型

• 期刊论文 [14]
• 会议论文 [1]
• 外文期刊 [1]

发表日期

• 2020 [2]
• 2002 [2]
• 1998 [11]
• 1995 [1]

学科主题

• 半导体材料 [5]
• 半导体物理 [2]

筛选

浏览/检索结果: 共16条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 2020 Design and Preparation of Polysulfide Flexible Polymers Based on Cottonseed Oil and Its Derivatives 期刊论文  OAI收割 POLYMERS, 2020, 卷号: 12, 期号: 9, 页码: 1-10 Chen, YR (Chen, Yurong)[ 1,2,3 ]; Liu, YX (Liu, Yanxia)[ 1,2,3 ]; Chen, YD (Chen, Yidan)[ 2,3 ]; Zhang, YG (Zhang, Yagang)[ 1,2,3 ]; Zan, XJ (Zan, Xingjie)[ 3 ]   |  收藏  |  浏览/下载：73/0  |  提交时间：2020/12/07 polysulfide-derived polymers  cottonseed oil  fatty acid of cottonseed oil  sodium soap of cottonseed oil   2020 Density-Adjustable Bio-Based Polysulfide Composite Prepared by Inverse Vulcanization and Bio-Based Fillers 期刊论文  OAI收割 POLYMERS, 2020, 卷号: 12, 期号: 9, 页码: 1-15 Liu, YX (Liu, Yanxia)[ 1,2,3 ]; Chen, YD (Chen, Yidan)[ 1,2 ]; Zhang, YG (Zhang, Yagang)[ 1,2,3,4 ]; Chen, YR (Chen, Yurong)[ 1,2,3 ]; Wang, LL (Wang, Lulu)[ 1,2,3 ]; Zan, XJ (Zan, Xingjie)[ 1 ]; Zhang, LT (Zhang, Letao)[ 1 ]   |  收藏  |  浏览/下载：70/0  |  提交时间：2020/12/09 sulfur  cottonseed oil  density-adjustable  inverse vulcanization  polysulfide composites   2002 Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process 外文期刊  OAI收割 2002 Tan, LW; Zan, YD; Wang, J; Wang, QY; Yu, YH; Wang, SR; Liu, ZL; Lin, LY   |  收藏  |  浏览/下载：31/0  |  提交时间：2010/11/26 Chemical-vapor-deposition  Epitaxial-growth  Al2o3 Films  Si   2002 Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process 期刊论文  OAI收割 journal of crystal growth, 2002, 卷号: 236, 期号: 1-3, 页码: 261-266 Tan LW; Zan YD; Wang J; Wang QY; Yu YH; Wang SR; Liu ZL; Lin LY; tan lw,chinese acad sci,inst semicond,novel semiconductor mat lab,beijing 100083,peoples r china. 收藏  |  浏览/下载：106/3  |  提交时间：2010/08/12 metalorganic chemical vapor deposition  CHEMICAL-VAPOR-DEPOSITION  EPITAXIAL-GROWTH  AL2O3 FILMS  SI   1998-4-1 Fabrication of gan epitaxial films on al2o3/si (001) substrates 期刊论文  iSwitch采集 Science in china series e-technological sciences, 1998, 卷号: 41, 期号: 2, 页码: 203-207 Wang, ls() 收藏  |  浏览/下载：47/0  |  提交时间：2019/05/12 Fabrication of gan epitaxial films  Al2o3/si(001) substrate  Metalorganic chemical deposition  Crystal structure and surface morphology  Photoluminescence spectrum   1998-1-5 Wurtzite gan epitaxial growth on a si(001) substrate using gamma-al2o3 as an intermediate layer 期刊论文  iSwitch采集 Applied physics letters, 1998, 卷号: 72, 期号: 1, 页码: 109-111 Wang, ls() 收藏  |  浏览/下载：194/0  |  提交时间：2019/05/12 1998 The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 193, 期号: 4, 页码: 484 Wang, LS; Liu, XL; Zan, YD; Wang, D; Lu, DC; Wang, ZG; Wang, YT; Cheng, LS; Zhang, Z; Wang, LS (reprint author), Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 收藏  |  浏览/下载：47/0  |  提交时间：2013/09/23 MOLECULAR-BEAM EPITAXY  SINGLE CRYSTALLINE GAN  HIGH-QUALITY GAN  INTERMEDIATE LAYER  BUFFER LAYERS  SI  FILMS  ALN  DEPOSITION  SAPPHIRE   1998 The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy 期刊论文  OAI收割 journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 484-490 Wang LS; Liu XL; Zan YD; Wang D; Lu DC; Wang ZG; Wang YT; Cheng LS; Zhang Z; wang ls,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. 电子邮箱地址: lswang@red.semi.ac.cn 收藏  |  浏览/下载：66/0  |  提交时间：2010/08/12 GaN  MOVPE growth  Al2O3 coated Si substrate  crystal structure  photoluminescence spectrum  SINGLE CRYSTALLINE GAN  HIGH-QUALITY GAN  INTERMEDIATE LAYER  BUFFER LAYERS  SI  FILMS  ALN  DEPOSITION  SAPPHIRE  MOLECULAR-BEAM EPITAXY   1998 Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates 期刊论文  OAI收割 science in china series e-technological sciences, 1998, 卷号: 41, 期号: 2, 页码: 203-207 Wang LS; Liu XG; Zan YD; Wang D; Wang J; Lu DC; Wang ZG; wang ls,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. 收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12 fabrication of GaN epitaxial films  Al2O3/Si(001) substrate  metalorganic chemical deposition  crystal structure and surface morphology  photoluminescence spectrum  GROWTH  DIODES  BUFFER LAYER   1998 Structure and magnetic properties of nitrides R3Fe29-xCrxN4 期刊论文  OAI收割 acta physica sinica-overseas edition, 1998, 卷号: 7, 期号: 1, 页码: 38-46 Han XF; Zan YD; Wang QY; Wang J; Yang FM; Ma L; han xf,acad sinica,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china. 收藏  |  浏览/下载：55/0  |  提交时间：2010/08/12 X=H  SM