机构

• 半导体研究所 [10]
• 金属研究所 [2]
• 新疆理化技术研究所 [2]
• 物理研究所 [1]
• 微电子研究所 [1]

采集方式

• OAI收割 [13]
• iSwitch采集 [3]

内容类型

• 期刊论文 [14]
• 会议论文 [1]
• 外文期刊 [1]

发表日期

• 2020 [2]
• 2002 [2]
• 1998 [11]
• 1995 [1]

学科主题

• 半导体材料 [5]
• 半导体物理 [2]

筛选

浏览/检索结果: 共16条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Design and Preparation of Polysulfide Flexible Polymers Based on Cottonseed Oil and Its Derivatives 期刊论文  OAI收割 POLYMERS, 2020, 卷号: 12, 期号: 9, 页码: 1-10 作者:     |  收藏  |   Density-Adjustable Bio-Based Polysulfide Composite Prepared by Inverse Vulcanization and Bio-Based Fillers 期刊论文  OAI收割 POLYMERS, 2020, 卷号: 12, 期号: 9, 页码: 1-15 作者:  Liu, YX (Liu, Yanxia)[ 1,2,3 ];  Chen, YD (Chen, Yidan)[ 1,2 ];  Zhang, YG (Zhang, Yagang)[ 1,2,3,4 ];  Chen, YR (Chen, Yurong)[ 1,2,3 ];  Wang, LL (Wang, Lulu)[ 1,2,3 ]   |  收藏  |   Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process 外文期刊  OAI收割 2002 作者:  Tan, LW;  Zan, YD;  Wang, J;  Wang, QY;  Yu, YH   |  收藏  |   Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process 期刊论文  OAI收割 journal of crystal growth, 2002, 卷号: 236, 期号: 1-3, 页码: 261-266 Tan LW; Zan YD; Wang J; Wang QY; Yu YH; Wang SR; Liu ZL; Lin LY 收藏  |   Fabrication of gan epitaxial films on al2o3/si (001) substrates 期刊论文  iSwitch采集 Science in china series e-technological sciences, 1998, 卷号: 41, 期号: 2, 页码: 203-207 作者:  Wang, LS;  Liu, XG;  Zan, YD;  Wang, D;  Wang, J 收藏  |   Wurtzite gan epitaxial growth on a si(001) substrate using gamma-al2o3 as an intermediate layer 期刊论文  iSwitch采集 Applied physics letters, 1998, 卷号: 72, 期号: 1, 页码: 109-111 作者:  Wang, LS;  Liu, XL;  Zan, YD;  Wang, J;  Wang, D 收藏  |   The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 193, 期号: 4, 页码: 484 Wang, LS; Liu, XL; Zan, YD; Wang, D; Lu, DC; Wang, ZG; Wang, YT; Cheng, LS; Zhang, Z 收藏  |   The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy 期刊论文  OAI收割 journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 484-490 Wang LS; Liu XL; Zan YD; Wang D; Lu DC; Wang ZG; Wang YT; Cheng LS; Zhang Z 收藏  |   Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates 期刊论文  OAI收割 science in china series e-technological sciences, 1998, 卷号: 41, 期号: 2, 页码: 203-207 Wang LS; Liu XG; Zan YD; Wang D; Wang J; Lu DC; Wang ZG 收藏  |   Structure and magnetic properties of nitrides R3Fe29-xCrxN4 期刊论文  OAI收割 acta physica sinica-overseas edition, 1998, 卷号: 7, 期号: 1, 页码: 38-46 Han XF; Zan YD; Wang QY; Wang J; Yang FM; Ma L 收藏  |