机构

• 半导体研究所 [48]

采集方式

• OAI收割 [25]
• iSwitch采集 [23]

内容类型

• 期刊论文 [48]

发表日期

• 2013 [8]
• 2012 [6]
• 2011 [11]
• 2010 [12]
• 2009 [2]
• 2008 [3]
• 更多

学科主题

• 半导体材料 [24]
• 半导体物理 [1]

筛选

浏览/检索结果: 共48条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Dielectric and barrier thickness fluctuation scattering in Al2O3AlGaNGaN double 期刊论文  OAI收割 thin solid films, 2013, 卷号: 534, 页码: 655–658 Dong Jia, Yanwu Lu , Bing Liu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang 收藏  |  浏览/下载：22/0  |  提交时间：2014/03/18 Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文  OAI收割 solid state communications, 2013, 卷号: 153, 期号: 1, 页码: 53-57 Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo 收藏  |  浏览/下载：32/0  |  提交时间：2013/10/10 Determination of polar C-plane and nonpolar A-plane AlN-GaN heterojunction band offsets by X-ray photoelectron spectroscopy 期刊论文  OAI收割 physica status solidi (b), 2013, 卷号: 1, 期号: 4 Huijie Li, Xianglin Liu, Ling Sang, Jianxia Wang, Dongdong Jin, Heng Zhang, Shaoyan Yang, Shuman Liu, Wei Mao, Yue Hao, Qinsheng Zhu, Zhanguo Wang 收藏  |  浏览/下载：32/0  |  提交时间：2014/03/17 Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors 期刊论文  OAI收割 applied physics letters, 2013, 卷号: 103, 期号: 23, 页码: 232109 Li, Huijie; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Wang, Jianxia; Zhang, Heng; Dong Jin, Dong; Feng, Yuxia; Yang, Shaoyan; Wang, Lianshan; Zhu, Qinsheng; Wang, Zhan-Guo 收藏  |  浏览/下载：30/0  |  提交时间：2014/03/17 Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells 期刊论文  OAI收割 physica e: low-dimensional systems and nanostructures, 2013, 卷号: 52, 页码: 150–154 Liu, Changbo; Yang, Shaoyan; Shi, Kai; Liu, Guipeng; Zhang, Heng; Jin, Dongdong; Gu, Chengyan; Zhao, Guijuan; Sang, Ling; Liu, Xianglin; Zhu, Qinsheng; Wang, Zhanguo 收藏  |  浏览/下载：33/0  |  提交时间：2014/03/18 Dielectric and barrier thickness fluctuation scattering in Al 2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文  OAI收割 thin solid films, 2013, 卷号: 534, 页码: 655–658 Dong Ji, Yanwu Lu, Bing Liu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang 收藏  |  浏览/下载：23/0  |  提交时间：2014/05/08 Scattering due to large cluster embedded in quantum wells 期刊论文  OAI收割 applied physics letters, 2013, 卷号: 102, 期号: 5, 页码: 052105 Liu, Changbo; Zhao, Guijuan; Liu, Guipeng; Song, Yafeng; Zhang, Heng; Jin, Dongdong; Li, Zhiwei; Liu, Xianglin; Yang, Shaoyan; Zhu, Qinsheng; Wang, Zhanguo 收藏  |  浏览/下载：25/0  |  提交时间：2013/09/22 Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文  OAI收割 thin solid films, 2013, 卷号: 534, 页码: 655-658 Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo 收藏  |  浏览/下载：27/0  |  提交时间：2013/08/27 Valence band offset of β-ga2o3/wurtzite gan heterostructure measured by x-ray photoelectron spectroscopy 期刊论文  iSwitch采集 Nanoscale research letters, 2012, 卷号: 7, 期号: 1 作者:  Wei,Wei;  Qin,Zhixin;  Fan,Shunfei;  Li,Zhiwei;  Shi,Kai 收藏  |  浏览/下载：29/0  |  提交时间：2019/05/12 β-ga2o3/wurtzite gan heterostructure  Band offset  X-ray photoelectron spectroscopy   Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures 期刊论文  OAI收割 applied physics letters, 2012, 卷号: 100, 期号: 8, 页码: 082101 Liu, Guipeng; Wu, Ju; Zhao, Guijuan; Liu, Shuman; Mao, Wei; Hao, Yue; Liu, Changbo; Yang, Shaoyan; Liu, Xianglin; Zhu, Qinsheng; Wang, Zhanguo 收藏  |  浏览/下载：32/0  |  提交时间：2013/05/07