机构

• 半导体研究所 [33]
• 物理研究所 [4]
• 上海微系统与信息技术... [3]
• 国家空间科学中心 [2]
• 金属研究所 [1]
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• OAI收割 [44]

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• 期刊论文 [42]
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• 2011 [2]
• 2010 [1]
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学科主题

• 半导体材料 [16]
• 半导体物理 [14]
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• Chemistry,... [1]
• Crystallog... [1]
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浏览/检索结果: 共44条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Growth Simulations of Self-Assembled Nanowires on Stepped Substrates 期刊论文  OAI收割 ieee journal of selected topics in quantum electronics, 2011, 卷号: 17, 期号: 4, 页码: 960-965 Liang S; Kong DH; Zhu HL; Wang W 收藏  |   Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文  OAI收割 journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.83501 作者:  Zhou GY;  Zhang HY;  Xu B;  Ye XL 收藏  |   Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy 期刊论文  OAI收割 applied surface science, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886 Zhao J (Zhao Jie); Zeng YP (Zeng Yiping); Liu C (Liu Chao); Cui LJ (Cui Lijie); Li YB (Li Yanbo) 收藏  |   First-principles studies of the atomic reconstructions of CdSe (001) and (111) surfaces 期刊论文  OAI收割 Journal of Physics-Condensed Matter, 2009, 卷号: 21, 期号: 9 L. Zhu; K. L. Yao; Z. L. Liu; Y. B. Li 收藏  |   Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers 期刊论文  OAI收割 chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 018101 作者:  Xu YQ;  Tang B 收藏  |   Shape stability of InAs self-assembled islands on vicinal GaAs(001) substrates 期刊论文  OAI收割 chemical physics letters, 2009, 卷号: 468, 期号: 4-6, 页码: 249-252 作者:  Liang S 收藏  |   Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains 期刊论文  OAI收割 applied physics letters, 2008, 卷号: 93, 期号: 1, 页码: art. no. 011107 Wang, BR; Sun, BQ; Ji, Y; Dou, XM; Xu, ZY; Wang, ZM; Salamo, GJ 收藏  |   Mechanism of low energy S+ ion bombarded p-GaAs (100) 期刊论文  OAI收割 Materials Letters, 2006, 卷号: 60, 期号: 25-26, 页码: 3084-3087 Zhao, Q.; Zhai, G. J.; Kwok, R. W. M. 收藏  |   Structural and electrical analysis of S+ ion bombarded p-InP(100) 期刊论文  OAI收割 Applied Surface Science, 2006, 卷号: 253, 期号: 3, 页码: 1356-1364 Zhao, Q.; Zhai, G. J.; Kwok, R. W. M. 收藏  |   Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 88, 期号: 24, 页码: art.no.242108 作者:  Zhang XW 收藏  |