中国科学院机构知识库网格系统: 检索

Magic Monatomic Linear Chains for Mn Nanowire Self-Assembly on Si(001) 期刊论文 OAI收割
PHYSICAL REVIEW LETTERS, 2010, 卷号: 105, 期号: 11
Wang, JT; Chen, CF; Wang, E; Kawazoe, Y

收藏 | 浏览/下载：26/0 | 提交时间：2013/09/18

SI(100) SURFACE SI DIFFUSION GROWTH DIMER ADSORPTION MECHANISM DYNAMICS SILICON

The 60 degrees or 180 degrees twinned Bi-doped PbTe film studied by EBSD 期刊论文 OAI收割
Applied Surface Science, 2010, 卷号: 257, 期号: 1, 页码: 271-275
S. Y. Ren; Y. K. Yang; H. D. Li; D. M. Li; X. Y. Lv; P. W. Zhu

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Bi-doped PbTe Hot wall epitaxy EBSD Twins Orientation infrared detectors silicon si(100) si(111)

Single wafer fabrication of a symmetric double-sided beam-mass structure using DRIE and wet etching by a novel vertical sidewall protection technique 期刊论文 OAI收割
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2010, 卷号: 20, 期号: 11, 页码: 115009-115009
Zhou, XF; Che, LF; Xiong, B; Fan, KB; Wang, YL; Wang, ZK

收藏 | 浏览/下载：20/0 | 提交时间：2011/12/17

ALKALINE-SOLUTIONS SILICON KOH TMAH SI(100) SURFACE

Study of micro-actuator with electrostatic actuating (EI CONFERENCE) 会议论文 OAI收割
ICO20: MEMS, MOEMS, and NEMS, August 21, 2005 - August 26, 2005, Changchun, China
作者: Liu C.-X.; Liu C.-X.

收藏 | 浏览/下载：18/0 | 提交时间：2013/03/25

The micro-actuator with the torsion beam and the cantilever beam on silicon is designed and analyzed which is actuated by electrostatic force. Based on the torsion dynamics theory the technique and relative formula are presented for analyzing the actuating voltage and the switching time on which the effect of the air squeeze film damping is already considered. The optimized results of the structural parameters are compared between this technique and the finite element modeling (FEM). The optimized result of parameters is as: length width and thickness of the torsion beam are 700 12 and 10m length and width of the cantilever beam are 1900 and 1000m length and width of the balance beam are 100 and 1000m and distance of the upper and lower electrodes is 55m respectively. The actuating voltage is about 50 V and the switching time Toff and Ton are about 5 and 12 ms respectively. The computed results show that the air squeeze film damping is an important factor for the study of dynamic response on micro-actuator. Finally an optical technique is described for the measurement of the actuating voltage and switching time of the device and the difference between the experimental results and theoretical datum is discussed.

Atomic and electronic structures of rubidium adsorption on Si(001)(2 x 1) surface: Comparison with Cs/Si(001) surface 期刊论文 OAI收割
Chemical Physics, 2006, 卷号: 323, 期号: 2-3, 页码: 383-390
H. Y. Xiao; X. T. Zu; Y. F. Zhang; F. Gao

收藏 | 浏览/下载：31/0 | 提交时间：2012/04/14

first-principles calculations rubidium adsorption silicon adsorbed si(100) surfaces angle-resolved photoemission potassium double-layer x-ray-diffraction photoelectron-spectroscopy 2x1-k surface cs si(001)-(2x1) overlayer cesium

Formation of interfacial layers in LaAlO3/silicon during film deposition 期刊论文 OAI收割
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 2, 页码: 467
Xiang, WF; Lu, HB; Yan, L; He, M; Zhou, YL; Chen, ZH

收藏 | 浏览/下载：27/0 | 提交时间：2013/09/17

AMORPHOUS LAALO3 THIN-FILMS OXIDATION SILICON SI(100)

Study of dynamic response on a MOEMS 22 optical switch (EI CONFERENCE) 会议论文 OAI收割
Optical Transmission, Switching, and Subsystems II, November 9, 2004 - November 11, 2004, Beijing, China
作者: Wang G.; Chen W.

收藏 | 浏览/下载：29/0 | 提交时间：2013/03/25

The MOEMS 22 optical switch with slant lower electrode and with torsion beam on silicon is designed and analyzed theoretically. Analytical formulae for the squeeze film damping coefficient and the squeeze film damping moment on the cantilever beam of the optical switch are derived. Based on the torsion dynamics theory the technique and relative results are presented for analyzing the actuating voltage and the switch time. The optimized result of parameters is as: length width and thickness of the torsion beam are 700 12 and 10 m length and width of the cantilever beam are 1900 and 1000 m length and width of the balance beam are 100 and 1000 m shortest spacing between the upper and lower electrodes is 0.05 m and highness of the lower electrode is 55 m respectively. The actuating voltage is less than 10 V and the switching time of Ton and Toff are 1.30ms and 1.25ms respectively. The computed results show that the air squeeze film damping is an important factor for the study of dynamic response on MOEMS optical switch.

Study on LD-pumped Nd:YAG laser cutter (EI CONFERENCE) 会议论文 OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者: Zhang G.; Zhang G.; Zhang G.; Zhang J.; Zhang J.

收藏 | 浏览/下载：23/0 | 提交时间：2013/03/25

The theory of laser cutter and the technology neck is analyzed. We can conclude that it is almost impossible to deal with the waste thick silicon wafers which are yielded in producing silicon wafers by conventional eroding or diamond cutting when the cutting velocity equals 100mm/min while it is also unperfected with ecumenical laser cutter without good beam quality or precise laseroptics system. It is represented that high average power and high repetition rate laser with good beam quality and precise laseroptics system are pivotal to obtain excellent cutting effect such as thick groove depth double-layer 0.75mm thick silicon wafer can be penetrated.. The cross section is fine and the groove is narrow rapid cutting speed the cutting quality meets the expecting demand. fine kerf section without considering the effect of technique. Considering laser medium thermal lens effect and thermal focal length changing with pumping power using plano-convex high reflectivity mirror as the back cavity mirror to compensate the heat lens influence a /4 waveplate to compensate heat -induced birefraction utilize the Nd:YAG self- aperture effect more than 50 W average power 1.064 um IR output is obtained with beam quality factor (M2) equals 3.19. Through the LD-Pumped Nd:YAG laser cutter we developed with short focus length negative spherical aberration focusing lens double axis linear step motor positioning system suitable beam expander multiplying factor appropriate diameter of exit beam aperture proper repetition rate when the cutting velocity equals 400mm/min 0.75mm thick silicon wafer can be penetrated

Oxygen pressure dependence of physical and electrical properties of LaAlO3 gate dielectric 期刊论文 OAI收割
MICROELECTRONIC ENGINEERING, 2005, 卷号: 77, 期号: 3-4, 页码: 399
Lu, XB; Lu, HB; Dai, JY; Chen, ZH; He, M; Yang, GZ; Chan, HLW; Choy, CL

收藏 | 浏览/下载：19/0 | 提交时间：2013/09/24

MOLECULAR-BEAM EPITAXY THERMAL-STABILITY AMORPHOUS LAALO3 FILMS DEPOSITION SILICON SI(100) SRTIO3

Interfacial microstructure of high-kappa dielectric CaZrOx films deposited by pulse laser deposition in low oxygen pressure 期刊论文 OAI收割
Integrated Ferroelectrics, 2005, 卷号: 74, 页码: 103-111
X. Y. Qiu; H. W. Liu; F. Fang; M. J. Ha; J. M. Liu

收藏 | 浏览/下载：26/0 | 提交时间：2012/04/14

calcium zirconate interfacial kinetic process microstructure thermal-stability gate dielectrics zro2 films thin-films silicon si diffusion si(100) growth oxides