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筛选

浏览/检索结果: 共37条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 High-performance solid-state photon-enhanced thermionic emission solar energy converters with graded bandgap window-layer 期刊论文  OAI收割 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 卷号: 54, 期号: 5 作者:  Yang, Yang;  Xu, Peng;  Cao, Weiwei;  Zhu, Bingli;  Wang, Bo   |  收藏  |  浏览/下载：62/0  |  提交时间：2020/12/08 photon-enhanced thermionic emission  solid-state device  solar energy converter  bandgap gradation  AlGaAs/GaAs hetero-junction   III-V族化合物半导体微结构红外探测器研究 学位论文  OAI收割 : 中国科学院研究生院, 2012 作者:  金巨鹏   |  收藏  |  浏览/下载：23/0  |  提交时间：2012/09/11 Gaas/algaas  量子阱红外探测器  Inas/gasb  二类超晶格  焦平面   Metal electrode influence on the wet selective etching of GaAs/AlGaAs 期刊论文  OAI收割 journal of vacuum science & technology b, 2011, 卷号: 29, 期号: 4, 页码: 41208 Wang J; Han Q; Yang XH; Wang XP; Ni HQ; He JF 收藏  |  浏览/下载：15/0  |  提交时间：2012/02/06 HYDROGEN-PEROXIDE SOLUTIONS  III-V SEMICONDUCTORS  PSEUDOMORPHIC MODFETS  GAAS  FABRICATION  TRANSISTOR  ALGAAS   STUDY ON MICROWAVE CYCLOTRON RESONANCE OF HIGH-MOBILITY GaAs/Al-0.35 Ga-0.65 As TWO-DIMENSIONAL ELECTRON GAS 期刊论文  OAI收割 journal of infrared and millimeter waves, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2010, 2010, 卷号: 29, 29, 期号: 2, 页码: 87-, 87- 作者:  Yang W (Yang Wei);  Luo HH (Luo Hai-Hui);  Qian X (Qian Xuan);  Ji Y (Ji Yang);  Yang, W, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: jiyang@semi.ac.cn   |  收藏  |  浏览/下载：94/0  |  提交时间：2010/05/24 microwave  Microwave  Reflectance  Two-dimensional Electron Gas(2deg)  Cyclotron Resonance  Quantum-wells  Gaas/algaas Heterostructures  Germanium  Silicon  reflectance  two-dimensional electron gas(2DEG)  cyclotron resonance  QUANTUM-WELLS  GAAS/ALGAAS HETEROSTRUCTURES  GERMANIUM  SILICON   808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.   BCl3/Ar ICP etching of GaSb and related materials for quaternary antimonide laser diodes 期刊论文  OAI收割 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 卷号: 152, 期号: 5, 页码: G372-G374 Hong, T; Zhang, YG(张永刚）; Liu, TD; Zheng, YL 收藏  |  浏览/下载：13/0  |  提交时间：2012/03/24 III-V-SEMICONDUCTORS  ROOM-TEMPERATURE  CHEMISTRIES  ALGAAS  INAS  GAAS   几种红外功能材料的显微光谱研究 学位论文  OAI收割 : 中国科学院研究生院, 2004 作者:  刘劼   |  收藏  |  浏览/下载：16/0  |  提交时间：2012/06/25 红外光电功能材料  显微光谱  Cdznte  Zn组分分布  Gaas/algaas  Qwip材料  显微pl线扫描  Vo2薄膜  显微raman  结构相变   1.31μm垂直腔面发射激光器材料及其物理特性研究 会议论文  OAI收割 第十三届全国化合物半导体材料、微波器件和光电器件学术会议暨第九届全国固体薄膜学术会议, 2004 吴惠桢; 黄占超; 劳燕锋 收藏  |  浏览/下载：26/0  |  提交时间：2012/01/18 GaAs/AlGaAs 分布布拉格反射镜 InAsP/InGaAsP 多量子阱 垂直腔面发射激光器 物理特性   Effects of As pressure on optical features of low-temperature grown GaAs/AlGaAs multiple quantum wells 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 236, 期号: 1-3, 页码: 90 Han, YJ; Guo, LW; Bao, CL; Huang, Q; Zhou, JM 收藏  |  浏览/下载：24/0  |  提交时间：2013/09/17 BEAM-EPITAXIAL GAAS  ALGAAS/GAAS  DEFECT  TIME   Sharp exciton photoluminescence in low-temperature-grown GaAs/AlGaAs multiple quantum wells 期刊论文  OAI收割 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 卷号: 41, 期号: 6A, 页码: 3762 Guo, LW; Han, YJ; Bao, CL; Dai, DY; Huang, Q; Zhou, JM 收藏  |  浏览/下载：31/0  |  提交时间：2013/09/24 MOLECULAR-BEAM EPITAXY  INTERFACE DISORDER  OPTICAL CHARACTERIZATION  SUBSTRATE-TEMPERATURE  GAAS  SEMICONDUCTORS  DEPENDENCE  ALGAAS