机构

• 半导体研究所 [11]
• 物理研究所 [2]
• 金属研究所 [1]
• 苏州纳米技术与纳米仿... [1]

采集方式

• OAI收割 [12]
• iSwitch采集 [3]

内容类型

• 期刊论文 [14]
• 学位论文 [1]

发表日期

• 2016 [1]
• 2013 [1]
• 2012 [1]
• 2010 [2]
• 2009 [5]
• 2008 [3]
• 更多

学科主题

• 半导体材料 [5]
• 光电子学 [2]
• 半导体物理 [1]

筛选

浏览/检索结果: 共15条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 宽禁带半导体材料光学性质的研究 学位论文  OAI收割 博士, 北京: 中国科学院研究生院, 2016 刘雅丽 收藏  |   Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor 期刊论文  OAI收割 CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 6 Yu, YX; Lin, ZJ; Luan, CB; Wang, YT; Chen, H; Wang, ZG 收藏  |   Intersubband absorption properties of high Al content AlxGa1-xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition 期刊论文  OAI收割 NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 1 Sun, HH; Guo, FY; Li, DY; Wang, L; Wang, DB; Zhao, LC 收藏  |   Surface roughness scattering in two dimensional electron gas channel 期刊论文  OAI收割 applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262111 Liu B; Lu YW; Jin GR; Zhao Y; Wang XL; Zhu QS; Wang ZG 收藏  |   Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui) 收藏  |   The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates 期刊论文  OAI收割 CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 10, 页码: 4413-4417 作者:  Zhang SM;  Yang H(杨辉);  Zhang SM 收藏  |   An internally-matched gan hemts device with 45.2 w at 8 ghz for x-band application 期刊论文  iSwitch采集 Solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335 作者:  Wang, X. L.;  Chen, T. S.;  Xiao, H. L.;  Tang, J.;  Ran, J. X. 收藏  |   An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文  OAI收割 SOLID-STATE ELECTRONICS, 2009, 卷号: 53, 期号: 3, 页码: 332-335 作者:     |  收藏  |   Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文  OAI收割 chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301 Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG 收藏  |   An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文  OAI收割 solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335 作者:  Zhang ML;  Hou QF 收藏  |