中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共6条，第1-6条

帮助

条数/页：排序方式：
	Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文 OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui) 收藏 \|
	Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文 OAI收割 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594 Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui) 收藏 \|
	Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition 期刊论文 OAI收割 journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 269-272 Huang Y (Huang Y.); Wang H (Wang H.); Sun Q (Sun Q.); Chen J (Chen J.); Li DY (Li D. Y.); Zhang JC (Zhang J. C.); Wang JF (Wang J. F.); Wang YT (Wang Y. T.); Yang H (Yang H.) 收藏 \|
	Statistical investigation on morphology development of gallium nitride in initial growth stage 期刊论文 OAI收割 journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 77-84 Yuan HR; Lu DC; Liu XL; Chen Z; Han P; Wang XH; Wang D 收藏 \|
	The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy 期刊论文 OAI收割 JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 193, 期号: 4, 页码: 484 Wang, LS; Liu, XL; Zan, YD; Wang, D; Lu, DC; Wang, ZG; Wang, YT; Cheng, LS; Zhang, Z 收藏 \|
	The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy 期刊论文 OAI收割 journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 484-490 Wang LS; Liu XL; Zan YD; Wang D; Lu DC; Wang ZG; Wang YT; Cheng LS; Zhang Z 收藏 \|