机构

• 半导体研究所 [5]
• 物理研究所 [1]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [6]

发表日期

• 2010 [1]
• 2006 [2]
• 2002 [1]
• 1998 [2]

学科主题

• 光电子学 [3]
• 半导体材料 [2]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui) 收藏  |  浏览/下载：137/4  |  提交时间：2010/04/13 GaN  Si (111) substrate  metalorganic chemical vapour deposition  AlN buffer layer  AlGaN interlayer  : VAPOR-PHASE EPITAXY  CRACK-FREE GAN  STRESS-CONTROL  SI(111)  DEPOSITION  ALXGA1-XN  FILM   Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文  OAI收割 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594 Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui) 收藏  |  浏览/下载：38/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  HIGH-QUALITY GAN  ALN BUFFER LAYER  NUCLEATION LAYER  PHASE EPITAXY  EVOLUTION  DENSITY  SILICON  STRESS  SI   Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition 期刊论文  OAI收割 journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 269-272 Huang Y (Huang Y.); Wang H (Wang H.); Sun Q (Sun Q.); Chen J (Chen J.); Li DY (Li D. Y.); Zhang JC (Zhang J. C.); Wang JF (Wang J. F.); Wang YT (Wang Y. T.); Yang H (Yang H.) 收藏  |  浏览/下载：52/0  |  提交时间：2010/04/11 growth mode  X-ray diffraction  metalorganic chemical vapor deposition  indium nitride  X-RAY-DIFFRACTION  THREADING DISLOCATIONS  ELECTRON-TRANSPORT  BUFFER LAYER  THIN-FILMS  GAN FILMS  SAPPHIRE  ALN   Statistical investigation on morphology development of gallium nitride in initial growth stage 期刊论文  OAI收割 journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 77-84 Yuan HR; Lu DC; Liu XL; Chen Z; Han P; Wang XH; Wang D 收藏  |  浏览/下载：83/3  |  提交时间：2010/08/12 atomic force microscopy  crystal morphology  organic vapor phase epitaxy  nitrides  CHEMICAL-VAPOR-DEPOSITION  AIN BUFFER LAYER  GAN  SAPPHIRE  ALN  EPITAXY  MOVPE   The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 193, 期号: 4, 页码: 484 Wang, LS; Liu, XL; Zan, YD; Wang, D; Lu, DC; Wang, ZG; Wang, YT; Cheng, LS; Zhang, Z 收藏  |  浏览/下载：24/0  |  提交时间：2013/09/23 MOLECULAR-BEAM EPITAXY  SINGLE CRYSTALLINE GAN  HIGH-QUALITY GAN  INTERMEDIATE LAYER  BUFFER LAYERS  SI  FILMS  ALN  DEPOSITION  SAPPHIRE   The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy 期刊论文  OAI收割 journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 484-490 Wang LS; Liu XL; Zan YD; Wang D; Lu DC; Wang ZG; Wang YT; Cheng LS; Zhang Z 收藏  |  浏览/下载：57/0  |  提交时间：2010/08/12 GaN  MOVPE growth  Al2O3 coated Si substrate  crystal structure  photoluminescence spectrum  SINGLE CRYSTALLINE GAN  HIGH-QUALITY GAN  INTERMEDIATE LAYER  BUFFER LAYERS  SI  FILMS  ALN  DEPOSITION  SAPPHIRE  MOLECULAR-BEAM EPITAXY