机构

• 半导体研究所 [4]
• 物理研究所 [2]
• 苏州纳米技术与纳米仿... [1]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [7]
• iSwitch采集 [1]

内容类型

• 期刊论文 [8]

发表日期

• 2019 [1]
• 2013 [1]
• 1999 [2]
• 1998 [4]

学科主题

• 半导体材料 [2]
• 半导体物理 [1]

筛选

浏览/检索结果: 共8条，第1-8条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Improving the Back Electrode Interface Quality of Cu2ZnSn(S,Se)(4) Thin-Film Solar Cells Using a Novel CuAlO2 Buffer Layer 期刊论文  OAI收割 Acs Applied Energy Materials, 2019, 卷号: 2, 期号: 3, 页码: 2230-2237 作者:  Y.P.Song;  B.Yao;  Y.F.Li;  Z.H.Ding;  R.J.Liu   |  收藏  |  浏览/下载：34/0  |  提交时间：2020/08/24 Cu2ZnSn(S,Se)(4) solar cell,CuAlO2 buffer layer,smooth and compact,surface,back electrode interface,crystalline quality,interface,optimization,power conversion efficiency,intermediate layer,optical-properties,solid-solutions,fabrication,contact,decomposition,efficiency,Chemistry,Energy & Fuels,Materials Science   High-quality InGaN epilayers grown by PA-MBE and abnormal incorporation behavior of Indium into InGaN 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 8 作者:  Yang, H(杨辉);  Wang, JF(王建峰) 收藏  |  浏览/下载：25/0  |  提交时间：2014/01/13 InGaN epilayer  plasma-assisted molecular beam epitaxy  indium incorporation  crystalline quality   Influence of crystal perfection on the reverse leakage current of the sige si p-n heterojunction diodes 期刊论文  iSwitch采集 Journal of crystal growth, 1999, 卷号: 201, 页码: 551-555 作者:  Liu, XF;  Liu, JP;  Li, JP;  Wang, YT;  Li, LY 收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12 Reverse leakage current  Crystalline quality  Sige se p-n heterojunction diodes   Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes 期刊论文  OAI收割 journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 551-555 作者:  Liu XF 收藏  |  浏览/下载：36/0  |  提交时间：2010/08/12 reverse leakage current  crystalline quality  SiGe Se p-n heterojunction diodes  LAYERS   Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 1998, 卷号: 73, 期号: 3, 页码: 336 Sheng, SR; Liao, XB; Kong, GL; Han, HX 收藏  |  浏览/下载：17/0  |  提交时间：2013/09/24 A-SI-H  CRYSTALLINE SILICON  DEPOSITION  SPECTRA  QUALITY   The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 193, 期号: 4, 页码: 484 Wang, LS; Liu, XL; Zan, YD; Wang, D; Lu, DC; Wang, ZG; Wang, YT; Cheng, LS; Zhang, Z 收藏  |  浏览/下载：30/0  |  提交时间：2013/09/23 MOLECULAR-BEAM EPITAXY  SINGLE CRYSTALLINE GAN  HIGH-QUALITY GAN  INTERMEDIATE LAYER  BUFFER LAYERS  SI  FILMS  ALN  DEPOSITION  SAPPHIRE   The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy 期刊论文  OAI收割 journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 484-490 Wang LS; Liu XL; Zan YD; Wang D; Lu DC; Wang ZG; Wang YT; Cheng LS; Zhang Z 收藏  |  浏览/下载：60/0  |  提交时间：2010/08/12 GaN  MOVPE growth  Al2O3 coated Si substrate  crystal structure  photoluminescence spectrum  SINGLE CRYSTALLINE GAN  HIGH-QUALITY GAN  INTERMEDIATE LAYER  BUFFER LAYERS  SI  FILMS  ALN  DEPOSITION  SAPPHIRE  MOLECULAR-BEAM EPITAXY   Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy 期刊论文  OAI收割 applied physics letters, 1998, 卷号: 73, 期号: 3, 页码: 336-338 Sheng SR; Liao XB; Kong GL; Han HX 收藏  |  浏览/下载：60/0  |  提交时间：2010/08/12 A-SI-H  CRYSTALLINE SILICON  DEPOSITION  SPECTRA  QUALITY