机构

• 半导体研究所 [8]
• 物理研究所 [1]

采集方式

• OAI收割 [8]
• iSwitch采集 [1]

内容类型

• 期刊论文 [7]
• 会议论文 [2]

发表日期

• 2003 [1]
• 2002 [3]
• 2001 [1]
• 2000 [3]
• 1997 [1]

学科主题

• 半导体材料 [6]
• 半导体物理 [1]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 9-13 Shen XM; Feng G; Zhang BS; Duan LH; Wang YT; Yang H 收藏  |   Structural characterization of epitaxial lateral overgrown gan on patterned gan/gaas(001) substrates 期刊论文  iSwitch采集 Journal of crystal growth, 2002, 卷号: 246, 期号: 1-2, 页码: 69-72 作者:  Shen, XM;  Fu, Y;  Feng, G;  Zhang, BS;  Feng, ZH 收藏  |   ECR plasma in growth of cubic GaN by low pressure MOCVD 期刊论文  OAI收割 plasma chemistry and plasma processing, 2002, 卷号: 22, 期号: 1, 页码: 159-174 Gu B; Xu Y; Qin FW; Wang SS; Sui Y; Wang ZG 收藏  |   Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates 期刊论文  OAI收割 journal of crystal growth, 2002, 卷号: 246, 期号: 1-2, 页码: 69-72 Shen XM; Fu Y; Feng G; Zhang BS; Feng ZH; Wang YT; Yang H 收藏  |   Dislocation filtering techniques for MBE large mismatched heteroepitaxy 期刊论文  OAI收割 PHYSICS AND APPLICATIONS OF SEMICONDUCTOR QUANTUM STRUCTURES, 2001, 页码: 88 Zhou, JM; Huang, Q; Chen, H; Peng, CS 收藏  |   The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition 期刊论文  OAI收割 thin solid films, 2000, 卷号: 368, 期号: 2, 页码: 237-240 Sun XL; Wang YY; Yang H; Li JB; Zheng LX; Xu DP; Wang ZG 收藏  |   The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition 会议论文  OAI收割 1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999 Sun XL; Wang YY; Yang H; Li JB; Zheng LX; Xu DP; Wang ZG 收藏  |   MOCVD growth of cubic GaN: Materials and devices 会议论文  OAI收割 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 作者:  Zhao DG;  Zhang SM 收藏  |   Properties of cubic GaN grown by MBE 期刊论文  OAI收割 materials science and engineering b-solid state materials for advanced technology, 1997, 卷号: 43, 期号: 0, 页码: 215-221 Brandt O; Yang H; Mullhauser JR; Trampert A; Ploog KH 收藏  |