中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [12]
金属研究所 [4]
物理研究所 [3]
上海微系统与信息技术... [3]
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iSwitch采集 [2]
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期刊论文 [21]
会议论文 [1]
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2011 [2]
2010 [1]
2009 [2]
2006 [2]
2005 [2]
2004 [1]
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半导体物理 [5]
半导体材料 [4]
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浏览/检索结果:
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First-principles study on the electronic structure of dilute magnetic semiconductor Ga(1-x)Cr(x)P in zinc-blende phase
期刊论文
OAI收割
Physica Status Solidi B-Basic Solid State Physics, 2011, 卷号: 248, 期号: 5, 页码: 1258-1263
H. M. Huang
;
S. J. Luo
;
K. L. Yao
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2012/04/13
dilute magnetic semiconductors
density functional theory
electron
density of states
GaCrP
half-metallic ferromagnets
heusler alloys
doped gap
spin
gaas
ge
al
si
Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO(2) films using Ge-ion implantation and neutron irradiation methods
期刊论文
OAI收割
Applied Physics Letters, 2011, 卷号: 98, 期号: 7
Q. Chen
;
T. Lu
;
M. Xu
;
C. Meng
;
Y. Hu
;
K. Sun
;
I. Shlimak
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2012/04/13
transmutation-doped gaas
electrical-properties
misfit dislocations
lasers go
silicon
films
Evaluating 0.53 eVGaInAsSbthermophotovoltaic diode based on an analytical absorption model
期刊论文
OAI收割
semiconductor science and technology, 2010, 卷号: 25, 期号: 9, 页码: art. no. 095002
Wang Y (Wang Y.)
;
Chen NF (Chen N. F.)
;
Zhang XW (Zhang X. W.)
;
Huang TM (Huang T. M.)
;
Yin ZG (Yin Z. G.)
;
Bai YM (Bai Y. M.)
收藏
  |  
浏览/下载:183/19
  |  
提交时间:2010/09/20
OPTICAL DIELECTRIC FUNCTION
DISPERSION-RELATIONS
CARRIER MOBILITIES
PHASE EPITAXY
DOPED GAAS
DEVICES
GASB
INP
ALXGA1-XAS
INGAASSB
Characteristic study of maximum modal gain of p-doped 1.3 mu m inas/gaas quantum dot lasers
期刊论文
iSwitch采集
Acta physica sinica, 2009, 卷号: 58, 期号: 3, 页码: 1896-1900
作者:
Ji Hai-Ming
;
Cao Yu-Lian
;
Yang Tao
;
Ma Wen-Quan
;
Cao Qing
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2019/05/12
Maximum modal gain
P-doped
Inas/gaas quantum dot laser
Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers
期刊论文
OAI收割
acta physica sinica, 2009, 卷号: 58, 期号: 3, 页码: 1896-1900
作者:
Ma WQ
;
Yang T
;
Cao YL
收藏
  |  
浏览/下载:249/62
  |  
提交时间:2010/03/08
maximum modal gain
p-doped
InAs/GaAs quantum dot laser
Current oscillation and dc-voltage-controlled chaotic dynamics in semiconductor superlattices
期刊论文
OAI收割
COMMUNICATIONS IN THEORETICAL PHYSICS, 2006, 卷号: 45, 期号: 2, 页码: 363-368
Wang, C
;
Lu, JT
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  |  
浏览/下载:18/0
  |  
提交时间:2012/03/24
ELECTRIC-FIELD DOMAINS
DOPED GAAS/ALAS SUPERLATTICE
GAAS-ALAS SUPERLATTICES
SELF-OSCILLATIONS
SYNCHRONIZATION
TRANSPORT
A complex Fourier transformation study of the contactless electroreflectance of an undoped-n(+) GaAs structure
期刊论文
OAI收割
semiconductor science and technology, 2006, 卷号: 21, 期号: 6, 页码: 786-789
作者:
Jin P
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  |  
浏览/下载:61/0
  |  
提交时间:2010/04/11
DELTA-DOPED GAAS
FRANZ-KELDYSH OSCILLATIONS
BUILT-IN FIELD
FERMI-LEVEL
PHOTOREFLECTANCE
SURFACE
SPECTROSCOPY
High electron mobility of modulation doped gaas after growing inp by solid source molecular beam epitaxyd
期刊论文
iSwitch采集
Transactions of nonferrous metals society of china, 2005, 卷号: 15, 期号: 2, 页码: 332-335
作者:
Shu, YC
;
Pi, B
;
Lin, YW
;
Xing, XD
;
Yao, JH
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2019/05/12
Modulation doped gaas
High electron mobility
Quantum hall oscillation
Self-sustained current oscillations in superlattices and the van der Pol equation
期刊论文
OAI收割
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 18
Sun, ZZ
;
Yin, S
;
Wang, XR
;
Cao, JP
;
Wang, YP
;
Wang, YQ
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2013/09/24
DOPED GAAS/ALAS SUPERLATTICE
GAAS-ALAS SUPERLATTICES
SEMICONDUCTOR SUPERLATTICES
DOMAIN FORMATION
MODEL
CHAOS
Oscillations in oblique-incidence optical reflection from a growth surface during layer-by-layer epitaxy
期刊论文
OAI收割
PHYSICAL REVIEW B, 2004, 卷号: 69, 期号: 23
Fei, YY
;
Zhu, XD
;
Liu, LF
;
Lu, HB
;
Chen, ZH
;
Yang, GZ
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2013/09/24
MOLECULAR-BEAM EPITAXY
VAPOR-PHASE EPITAXY
NB-DOPED SRTIO3
ELECTRONIC-STRUCTURE
FILM GROWTH
GAAS
MBE
DIFFERENCE
SPECTROSCOPY
DIFFRACTION