中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共5条，第1-5条

帮助

条数/页：排序方式：
	Origin of deep level defect related photoluminescence in annealed InP 期刊论文 OAI收割 journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: art.no.123519 Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Miao, SS (Miao, Shanshan); Deng, AH (Deng, Aihong); Yang, J (Yang, Jun); Wang, B (Wang, Bo) 收藏 \| 浏览/下载：83/0 \| 提交时间：2010/03/29 DOPED SEMIINSULATING INP
	Annealing ambient controlled deep defect formation in InP 会议论文 OAI收割 10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003 Zhao YW; Dong ZY; Duan ML; Sun WR; Zeng YP; Sun NF; Sun TN 收藏 \| 浏览/下载：57/1 \| 提交时间：2010/10/29 FE-DOPED INP SEMIINSULATING INP POINT-DEFECTS PRESSURE WAFERS TRAPS
	Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文 OAI收割 journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7 Dong ZY; Zhao YW; Zeng YP; Duan ML; Sun WR; Jiao JH; Lin LY 收藏 \| 浏览/下载：374/16 \| 提交时间：2010/08/12 annealing defects etching semiconducting indium phosphide FE-DOPED INP SEMIINSULATING INP INDIUM-PHOSPHIDE DEFECTS DIFFUSION CRYSTALS WAFERS
	Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour 期刊论文 OAI收割 semiconductor science and technology, 2002, 卷号: 17, 期号: 6, 页码: 570-574 Dong HW; Zhao YW; Lu HP; Jiao JH; Zhao JQ; Lin LY 收藏 \| 浏览/下载：76/0 \| 提交时间：2010/08/12 FE-DOPED INP SEMIINSULATING INP ELECTRICAL-PROPERTIES ROOM-TEMPERATURE UNIFORMITY PRESSURE INGOT
	Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance 期刊论文 OAI收割 journal of applied physics, 2002, 卷号: 92, 期号: 4, 页码: 1968-1970 Dong HW; Zhao YW; Zhang YH; Jiao JH; Zhao JQ; Lin LY 收藏 \| 浏览/下载：87/15 \| 提交时间：2010/08/12 FE-DOPED INP SEMIINSULATING INP UNDOPED INP SPECTROSCOPY WAFER UNIFORMITY PRESSURE TRAPS