机构

• 新疆理化技术研究所 [15]
• 数学与系统科学研究院 [1]

采集方式

• OAI收割 [16]

内容类型

• 期刊论文 [14]
• 学位论文 [2]

发表日期

• 2019 [1]
• 2018 [5]
• 2017 [2]
• 2016 [1]
• 2011 [1]
• 2010 [2]
• 更多

学科主题

• Physics [4]
• Nuclear Sc... [2]

筛选

浏览/检索结果: 共16条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Comparison of holes trapping and protons transport induced by low dose rate gamma radiation in oxide on different SiGe processes 期刊论文  OAI收割 MICROELECTRONICS RELIABILITY, 2019, 卷号: 103, 期号: 12, 页码: 1-5 作者:  Li, P (Li, Pei)[ 1 ];  He, CH (He, ChaoHui)[ 1 ];  Guo, HX (Guo, HongXia)[ 2,3 ];  Zhang, JX (Zhang, JinXin)[ 4 ];  Li, YH (Li, YongHong)[ 1 ]   |  收藏  |   A Multi-Time-Step Finite Element Algorithm for 3-D Simulation of Coupled Drift-Diffusion Reaction Process in Total Ionizing Dose Effect 期刊论文  OAI收割 IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2018, 卷号: 31, 期号: 1, 页码: 183-189 作者:  Xu, Jingjie   |  收藏  |   国产pnp双极晶体管在宽总剂量范围辐照下的ELDRS 期刊论文  OAI收割 半导体技术, 2018, 卷号: 43, 期号: 5, 页码: 369-374 作者:  魏昕宇;  陆妩;  李小龙;  王信;  孙静   |  收藏  |   Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor 期刊论文  OAI收割 CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 3, 页码: 1-9 作者:  Li, XL (Li, Xiao-Long);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Yu, X (Yu, Xin);  Guo, Q (Guo, Qi)   |  收藏  |   Using temperature-switching approach to evaluate the ELDRS of bipolar devices 期刊论文  OAI收割 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2018, 卷号: 172, 期号: 11-12, 页码: 824-834 作者:  Li, XL (Li, Xiaolong);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Guo, Q (Guo, Qi);  Yu, X (Yu, Xin)   |  收藏  |   Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases 期刊论文  OAI收割 MICROELECTRONICS RELIABILITY, 2018, 卷号: 84, 期号: 5, 页码: 105-111 作者:  Zhang, JX (Zhang, Jin-xin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hong-xia);  Lu, W (Lu, Wu);  He, CH (He, Chao-hui)   |  收藏  |   基于国产双多晶自对准工艺的双极晶体管辐射效应研究 学位论文  OAI收割 中国科学院新疆理化技术研究所: 中国科学院大学, 2017 作者:  贾金成   |  收藏  |   An Investigation of ELDRS in Different SiGe Processes 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 期号: 5, 页码: 1137-1141 作者:  Li, P (Li, Pei);  He, CH (He, Chaohui);  Guo, HX (Guo, Hongxia);  Guo, Q (Guo, Qi);  Zhang, JX (Zhang, Jinxin) 收藏  |   Total ionizing dose effects of domestic SiGe HBTs under different dose rates 期刊论文  OAI收割 CHINESE PHYSICS C, 2016, 卷号: 40, 期号: 3 作者:  Liu, MH (Liu, Mo-Han);  Lu, W (Lu, Wu);  Ma, WY (Ma, Wu-Ying);  Wang, X (Wang, Xin);  Guo, Q (Guo, Qi) 收藏  |   Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors 期刊论文  OAI收割 CHINESE PHYSICS C, 2011, 卷号: 35, 期号: 2, 页码: 169-173 作者:  Lu Wu;  Zheng Yu-Zhan;  Wang Yi-Yuan;  Ren Di-Yuan;  Guo Qi 收藏  |