机构

• 合肥物质科学研究院 [5]
• 力学研究所 [2]
• 半导体研究所 [2]
• 物理研究所 [1]

采集方式

• OAI收割 [9]
• iSwitch采集 [1]

内容类型

• 期刊论文 [8]
• 会议论文 [2]

发表日期

• 2017 [3]
• 2016 [2]
• 2012 [1]
• 2009 [1]
• 2006 [1]
• 2004 [2]
• 更多

学科主题

• 光电子学 [1]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 695, 期号: 无, 页码: 2199-2206 作者:  Gao, J.;  He, G.;  Fang, Z. B.;  Lv, J. G.;  Liu, M. 收藏  |  浏览/下载：18/0  |  提交时间：2018/07/04 High-k Gate Dielectrics  Interface Quality  Band Alignment  Electrical Properties  Leakage Current Mechanism   Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics 期刊论文  OAI收割 CERAMICS INTERNATIONAL, 2017, 卷号: 43, 期号: 3, 页码: 3101-3106 作者:  Jin, P.;  He, G.;  Fang, Z. B.;  Liu, M.;  Xiao, D. Q. 收藏  |  浏览/下载：24/0  |  提交时间：2018/07/04 High-k Hfalox Gate Dielectrics  Sol-gel  Optical Properties  Electrical Properties  Leakage Current Transport Mechanism   Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 691, 期号: 无, 页码: 504-513 作者:  Gao, J. 收藏  |  浏览/下载：25/0  |  提交时间：2017/11/21 High-k Dielectric  Interface Thermal Stability  Atomic-layer-deposition  Band Alignment  Electrical Properties  Leakage Current Mechanism   Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack 期刊论文  OAI收割 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 期号: 8, 页码: 8075-8082 作者:  Gao, Juan;  He, Gang;  Zhang, Jiwen;  Chen, Xuefei;  Jin, Peng 收藏  |  浏览/下载：26/0  |  提交时间：2017/11/21 High-k Gate Dielectric  Atomic Layer Deposition  Electrical Properties  Leakage Current Mechanism   Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfO2 gate dielectrics 期刊论文  OAI收割 CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 6, 页码: 6761-6769 作者:  Jin, Peng;  He, Gang;  Xiao, Dongqi;  Gao, Juan;  Liu, Mao 收藏  |  浏览/下载：23/0  |  提交时间：2017/10/18 High-k Gate Dielectrics  Sol-gel  Electrical Properties  Leakage Current Transport Mechanism  Optical Properties   New electromagnetic imaging tool introduced for corrosion detection 会议论文  OAI收割 2012 International Conference on Electrical Insulating Materials and Electrical Engineering, EIMEE 2012, Shenyang, Liaoning, China, MAY 25-27, 2012 作者:  Zhong XF(钟兴福);  Wu YX(吴应湘);  Chen JQ;  Abakumov A;  Zhong XF(钟兴福) 收藏  |  浏览/下载：25/0  |  提交时间：2013/02/26 Electrical engineering  Electromagnetism  Inspection  Insulating materials  Magnetic leakage  Oil fields  Brush structure  Casing damage  Casing wall  Corrosion detection  Corrosion inspection  Electromagnetic imaging  High resolution  Magnetic flux leakage  Metal loss  System structures  Thickness determination  Vertical profile   Electrical leakage through thin PDMS microchannel walls and its applications 会议论文  OAI收割 2008 ASME International Mechanical Engineering Congress and Exposition, IMECE 2008, Boston, MA, United states, October 31, 2008 - November 6, 2008 作者:  Sun JS;  Vajandar SK;  Xu DY;  Kang YJ;  Li DQ 收藏  |  浏览/下载：23/0  |  提交时间：2017/07/14 Channel wall  Electrical field  Electrical leakage  Electroosmotic flow  Electroosmotic velocity  Electrophoretic migration  Experimental characterization  Individual particles  Insulated boundary  Microfluidic channel  Microfluidic circuit  Microfluidic networks  Numerical modeling  PDMS microchannels   Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 89, 期号: 3, 页码: art.no.033503 Wang RX (Wang R. X.); Xu SJ (Xu S. J.); Djurisic AB (Djurisic A. B.); Beling CD (Beling C. D.); Cheung CK (Cheung C. K.); Cheung CH (Cheung C. H.); Fung S (Fung S.); Zhao DG (Zhao D. G.); Yang H (Yang H.); Tao XM (Tao X. M.) 收藏  |  浏览/下载：37/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  N-TYPE GAN  ELECTRICAL-PROPERTIES  BIAS LEAKAGE  DIODES  OXYGEN   Influence of nitrogen annealing on electrical properties of lead zirconate titanate thin film deposited on titanium metal foil 期刊论文  iSwitch采集 Materials letters, 2004, 卷号: 58, 期号: 5, 页码: 706-710 作者:  Zhang, GQ;  Zou, Q;  Sun, P;  Mei, X;  Ruda, HE 收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12 Ferroelectrics  Electrical properties  Heat treatment  Nitrogen annealing  Dielectric constant  Leakage current   Enhanced dielectric properties of Ba1-xSrxTiO3 thin film grown on La1-xSrxMnO3 bottom layer 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2004, 卷号: 96, 期号: 11, 页码: 6578 Miao, J; Chen, WR; Zhao, L; Chen, B; Yang, H; Peng, W; Zhu, XH; Xu, B; Cao, LX; Qiu, XG; Zhao, BR 收藏  |  浏览/下载：25/0  |  提交时间：2013/09/17 ELECTRICAL-PROPERTIES  FERROELECTRIC PROPERTIES  LANIO3 ELECTRODE  LEAKAGE CURRENT  HETEROSTRUCTURES  OXYGEN  LA0.5SR0.5COO3  TUNABILITY  CAPACITORS  DEPOSITION