机构

• 半导体研究所 [9]
• 物理研究所 [6]
• 金属研究所 [1]
• 苏州纳米技术与纳米仿... [1]
• 长春光学精密机械与物... [1]
• 福建物质结构研究所 [1]
• 更多

采集方式

• OAI收割 [20]

内容类型

• 期刊论文 [19]
• 会议论文 [1]

发表日期

• 2018 [1]
• 2011 [6]
• 2010 [4]
• 2009 [3]
• 2008 [2]
• 2007 [1]
• 更多

学科主题

• 半导体材料 [4]
• 半导体物理 [3]
• 光电子学 [2]

筛选

浏览/检索结果: 共20条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Theoretical studies for the infrared spectra of Ar-CO2 complex: Fundamental and combination bands 期刊论文  OAI收割 SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 2018, 卷号: 204, 页码: 308-316 作者:  Zhao, Aiqing;  Shi, Lipeng;  Tian, Yanshan;  Zheng, Limin;  Zheng, Rui   |  收藏  |  浏览/下载：34/0  |  提交时间：2018/11/05 Ar-co2 Complex  Potential Energy Surfaces  Intermolecular Vibrational Modes  Fundamental Band  Combination Bands   Vapor-liquid-solid meets vapor-solid growth mechanism for fabricating high quality indium nitride crystallites 期刊论文  OAI收割 CRYSTENGCOMM, 2011, 卷号: 13, 期号: 11, 页码: 3649 Liu, HB; Xie, SS; Cheng, GS 收藏  |  浏览/下载：31/0  |  提交时间：2013/09/23 SELECTIVE-AREA GROWTH  FUNDAMENTAL-BAND GAP  NANOWIRE GROWTH  INN  EMISSION  PHOTOLUMINESCENCE  SURFACE   Vapor-liquid-solid meets vapor-solid growth mechanism for fabricating high quality indium nitride crystallites 期刊论文  OAI收割 CRYSTENGCOMM, 2011, 卷号: 13, 期号: 11, 页码: 3649-3652 作者:  Cheng Guosheng(程国胜);  Cheng Guosheng(程国胜) 收藏  |  浏览/下载：22/0  |  提交时间：2012/08/24 SELECTIVE-AREA GROWTH  FUNDAMENTAL-BAND GAP  NANOWIRE GROWTH  INN  EMISSION  PHOTOLUMINESCENCE  SURFACE   Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文  OAI收割 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: 245402 Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG 收藏  |  浏览/下载：21/0  |  提交时间：2012/02/06 FUNDAMENTAL-BAND GAP  INDIUM NITRIDE  BUFFER LAYER  DEPENDENCE  SAPPHIRE  MOCVD   An investigation on InxGa1-xN/GaN multiple quantum well solar cells 期刊论文  OAI收割 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 26, 页码: art. no. 265103 作者:  Yin HB;  Lin DF;  Hou QF;  Deng QW 收藏  |  浏览/下载：42/2  |  提交时间：2011/07/07 FUNDAMENTAL-BAND GAP  PHASE-SEPARATION  EFFICIENCY  INN  EMISSION  LAYERS  MODEL   An investigation on In(x)Ga(1-x)N/GaN multiple quantum well solar cells 期刊论文  OAI收割 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 26, 页码: 265103 Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Hou QF; Lin DF; Li JM; Wang ZG; Hou X 收藏  |  浏览/下载：15/0  |  提交时间：2012/01/06 FUNDAMENTAL-BAND GAP  PHASE-SEPARATION  EFFICIENCY  INN  EMISSION  LAYERS  MODEL   Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition 期刊论文  OAI收割 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402 Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG 收藏  |  浏览/下载：46/2  |  提交时间：2011/07/05 FUNDAMENTAL-BAND GAP  INDIUM NITRIDE  BUFFER LAYER  DEPENDENCE  SAPPHIRE  MOCVD   Structure and optical properties of InN and InAlN films grown by rf magnetron sputtering 期刊论文  OAI收割 Journal of Materials Science-Materials in Electronics, 2010, 卷号: 21, 期号: 7, 页码: 676-681 H. He, Y. G. Cao, R. L. Fu, H. Wang, J. Q. Huang, C. G. Huang, M. L. Wang and Z. H. Deng 收藏  |  浏览/下载：56/0  |  提交时间：2012/11/02 fundamental-band gap  electronic-structure  bragg mirrors  thin-films  epitaxy  heterostructures  absorption  alxin1-xn  alloys  alinn   Experiments of second harmonic generation output in pulsed TEA CO 2 laser (EI CONFERENCE) 会议论文  OAI收割 High-Power Lasers and Applications V, October 18, 2010 - October 19, 2010, Beijing, China 作者:  Li D. 收藏  |  浏览/下载：52/0  |  提交时间：2013/03/25 It is always the hot subject to realize the output of high-power laser in the range of 3-5m wavelength. This rang of wave band has greatly important applications in military because it located in the atmosphere window. Generally there are two ways to obtain this range of laser wavelength. One way is through optical parameter oscillation (OPO) from shorter laser wavelength and the other is through second harmonic generation (SHG) from longer laser wavelength. Firstly  the comparison between tow nonlinear crystals ZnGeP2 and AgGaSe2 is conducted for their nonlinear coefficient and damaging threshold in theory. The theoretical results show that the crystal AgGaSe 2 is more suitable for the SHG of pulsed TEA CO2 laser. When using pulsed TEA CO2 laser with wavelength of 9.3m to pumping AgGaSe2 SHG crystal  the wavelength of 4.65m is obtained. In the condition of repetition rate 100Hz  the upmost output power of single pulse is up to level of 1W  which corresponding efficiency of SHG is about 6%. The experimental results show that the polarization of laser beam has greatly influence on the SHG output of the crystal. Under the radiation of 3MW/cm 2 from fundamental wave and the right position for maximal SHG output in the crystal  when polarization of laser beam rotates 4.5  the SHG output of energy decrease about 30%. The research of this paper will make a foundation for further development of mid-infrared laser. 2010 Copyright SPIE - The International Society for Optical Engineering.   Single-crystal growth: From new borates to industrial semiconductors 期刊论文  OAI收割 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 卷号: 207, 期号: 12, 页码: 2757 Wang, G; Chen, XL 收藏  |  浏览/下载：17/0  |  提交时间：2013/09/24 NONLINEAR-OPTICAL CRYSTAL  SHARING BO4 TETRAHEDRA  FUNDAMENTAL BUILDING-BLOCK  HIGH-PRESSURE PREPARATION  BROAD-BAND AMPLIFICATION  SIC BULK CRYSTAL  PVT METHOD  LI3N FLUX  LUMINESCENCE PROPERTIES  NEGATIVE REFRACTION