机构

• 物理研究所 [4]
• 半导体研究所 [3]
• 福建物质结构研究所 [1]

采集方式

• OAI收割 [8]

内容类型

• 期刊论文 [6]
• 会议论文 [2]

发表日期

• 2008 [1]
• 2004 [2]
• 2003 [1]
• 2001 [2]
• 2000 [1]
• 1999 [1]
• 更多

学科主题

• 半导体材料 [3]

筛选

浏览/检索结果: 共8条，第1-8条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 First-principles calculations of ethanethiol adsorption and decomposition on GaN (0001) surface 期刊论文  OAI收割 Applied Surface Science, 2008, 卷号: 254, 期号: 20, 页码: 6514-6520 C. L. Hu; Y. Chen; J. Q. Li and Y. F. Zhang 收藏  |  浏览/下载：31/0  |  提交时间：2013/01/22 GaN (0001) surface  ethanethiol  DFT  adsorption  packing structure  thermal decomposition  self-assembled monolayers  bare semiconductor surfaces  density-functional theory  au(111)  molecules  chemisorption  interface  sulfur  energy   Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth 期刊论文  OAI收割 PHYSICS-USPEKHI, 2004, 卷号: 47, 期号: 4, 页码: 371 Bakhtizin, RZ; Xue, QZ; Xue, QK; Wu, KH; Sakurai, T 收藏  |  浏览/下载：17/0  |  提交时间：2013/09/24 MOLECULAR-BEAM EPITAXY  ENERGY ELECTRON-DIFFRACTION  COVERED GAN(0001) SURFACES  LIGHT-EMITTING DIODES  CUBIC GAN  ATOMIC-STRUCTURE  GAN(000(1)OVER-BAR) SURFACE  LATTICE POLARITY  SINGLE-CRYSTALS  SILICON-CARBIDE   Ce/GaN(0001) interfacial formation and electronic properties 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2004, 卷号: 95, 期号: 3, 页码: 943 Xiao, WD; Guo, QL; Wang, EG 收藏  |  浏览/下载：28/0  |  提交时间：2013/09/17 METAL-SEMICONDUCTOR INTERFACE  WURTZITE GAN SURFACES  SCHOTTKY CONTACTS  BARRIER HEIGHTS  GROWTH  FILMS  GAN(0001)-(1X1)  SI(111)  STATES  CE   High-mobility Ga-polarity GaN achieved by NH3-MBE 会议论文  OAI收割 symposium on gan and related alloys held at the 2002 mrs fall meeting, boston, ma, dec 02-06, 2002 Wang JX; Wang XL; Sun DZ; Li JM; Zeng YP; Hu GX; Liu HX; Lin LY 收藏  |  浏览/下载：44/0  |  提交时间：2010/10/29 MOLECULAR-BEAM EPITAXY  ION-SCATTERING SPECTROSCOPY  LATTICE POLARITY  SINGLE-CRYSTALS  FILMS  POLARIZATION  GAN(0001)  SURFACES  GROWTH  DIODES   Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 376-380 Zheng LX; Xie MH; Xu SJ; Cheung SH; Tong SY 收藏  |  浏览/下载：89/5  |  提交时间：2010/08/12 surface processes  molecular beam epitaxy  nitrides  semiconducting gallium compounds  GAN(0001) SURFACES  RECONSTRUCTIONS   Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Zheng LX; Xie MH; Xu SJ; Cheung SH; Tong SY 收藏  |  浏览/下载：22/0  |  提交时间：2010/11/15 surface processes  molecular beam epitaxy  nitrides  semiconducting gallium compounds  GAN(0001) SURFACES  RECONSTRUCTIONS   Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy 期刊论文  OAI收割 THIN SOLID FILMS, 2000, 卷号: 367, 期号: 1-2, 页码: 149 Xue, QK; Xue, QZ; Kuwano, S; Sakurai, T; Ohno, T; Tsong, IST; Qiu, XG; Segawa, Y 收藏  |  浏览/下载：27/0  |  提交时间：2013/09/17 ENERGY ELECTRON-DIFFRACTION  6H-SIC(0001) SURFACES  ATOMIC-STRUCTURE  GAN(0001) SURFACES  LATTICE POLARITY  0001 SURFACES  LASER-DIODES  GROWTH  RECONSTRUCTION  MORPHOLOGY   Structures of GaN(0001)-(2x2), -(4x4), and -(5x5) surface reconstructions 期刊论文  OAI收割 PHYSICAL REVIEW LETTERS, 1999, 卷号: 82, 期号: 15, 页码: 3074 Xue, QK; Xue, QZ; Bakhtizin, RZ; Hasegawa, Y; Tsong, IST; Sakurai, T; Ohno, T 收藏  |  浏览/下载：35/0  |  提交时间：2013/09/24 MOLECULAR-BEAM EPITAXY  SCANNING-TUNNELING-MICROSCOPY  ENERGY ELECTRON-DIFFRACTION  LATTICE POLARITY  0001 SURFACES  GAN GROWTH  AB-INITIO  STOICHIOMETRY  6H-SIC(0001)  LAYERS