中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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半导体研究所 [79]
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期刊论文 [156]
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Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects
期刊论文
OAI收割
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 卷号: 53, 期号: 48
作者:
Guo, Wei
;
Xu, Houqiang
;
Chen, Li
;
Yu, Huabin
;
Jiang, Jie'an
  |  
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2020/12/16
INVERSION DOMAIN BOUNDARIES
MOLECULAR-BEAM EPITAXY
C-GAN DOMAINS
GALLIUM NITRIDE
N-POLARITY
2ND-HARMONIC GENERATION
SURFACE-MORPHOLOGY
GAAS FILMS
GROWTH
ALN
Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects
期刊论文
OAI收割
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 卷号: 53, 期号: 48
作者:
Guo, Wei
;
Xu, Houqiang
;
Chen, Li
;
Yu, Huabin
;
Jiang, Jie'an
  |  
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2021/12/01
INVERSION DOMAIN BOUNDARIES
MOLECULAR-BEAM EPITAXY
C-GAN DOMAINS
GALLIUM NITRIDE
N-POLARITY
2ND-HARMONIC GENERATION
SURFACE-MORPHOLOGY
GAAS FILMS
GROWTH
ALN
Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates
期刊论文
OAI收割
SUPERLATTICES AND MICROSTRUCTURES, 2019, 卷号: 129, 页码: 20-27
作者:
Xu, Houqiang
;
Jiang, Jie'an
;
Sheikhi, Moheb
;
Chen, Zhaoying
;
Hoo, Jason
  |  
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2019/12/18
SURFACE-MORPHOLOGY
GAN FILMS
KINETICS
QUALITY
TERNARY
INGAN
BLUE
Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps
期刊论文
OAI收割
Crystengcomm, 2019, 卷号: 21, 期号: 33, 页码: 4864-4873
作者:
K.Jiang
;
X.J.Sun
;
J.W.Ben
;
Z.M.Shi
;
Y.P.Jia
  |  
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2020/08/24
potential fluctuations,gan films,alxga1-xn,sapphire,quality,localization,relaxation,inversion
Epitaxial integration of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (111) thin films on GaN (0002) with La0.5Sr0.5CoO3/TiO2 buffer layers
期刊论文
OAI收割
MATERIALS LETTERS, 2018, 卷号: 216, 页码: 224, 227
作者:
Li, Guanjie
;
Li, Xiaomin
;
Bi, Zhijie
;
Chen, Yongbo
;
Xu, Xiaoke
  |  
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2018/12/28
Ferroelectrics
Thin films
Epitaxial growth
PMN-PT
GaN
Physical vapour deposition
Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures
期刊论文
OAI收割
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 57, 期号: 3
作者:
Bo, Baoxue
;
Li, Junmei
;
Guo, Wei
;
Jiang, Jie'an
;
Gao, Pingqi
  |  
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2018/12/04
Light-emitting-diodes
Single-crystal Gan
Thin-films
Photodetectors
Heterojunction
Reinventing a p-type doping process for stable ZnO light emitting devices
期刊论文
OAI收割
Journal of Physics D-Applied Physics, 2018, 卷号: 51, 期号: 22, 页码: 4
作者:
Xie, X. H.
;
Li, B. H.
;
Zhang, Z. Z.
;
Shen, D. Z.
  |  
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/09/17
zinc oxide
p-type
self-compens-tion
doping
molecular-beam epitaxy
thin-films
room-temperature
mgzno films
diodes
nanoparticles
modulation
gan(0001)
inversion
epilayers
Physics
Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si
期刊论文
OAI收割
Light-Science & Applications, 2018, 卷号: 7, 页码: 6
作者:
Sun, Y.
;
Zhou, K.
;
Feng, M. X.
;
Li, Z. C.
;
Zhou, Y.
  |  
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/09/17
x-ray-diffraction
high-power
gan
dislocation
relaxation
films
Optics
Molecular gated-AlGaNGaN high electron mobility transistor for pH detection
期刊论文
OAI收割
Analyst, 2018, 卷号: 143, 期号: 12, 页码: 2784-2789
作者:
Ding, X. Z.
;
Yang, S.
;
Miao, B.
;
Gu, L.
;
Gu, Z. Q.
  |  
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/09/17
field-effect transistors
gan surfaces
sensors
ion
deposition
stability
insulator
films
acid
Chemistry
The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition
期刊论文
OAI收割
Crystengcomm, 2018, 卷号: 20, 期号: 19, 页码: 2720-2728
作者:
Jiang, K.
;
Sun, X. J.
;
Ben, J. W.
;
Jia, Y. P.
;
Liu, H. N.
  |  
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/09/17
light-emitting-diodes
screw dislocations
threading dislocations
phase
epitaxy
gan
films
algan
core
edge
generation
Chemistry
Crystallography