中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共165条,第1-10条 帮助

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Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects 期刊论文  OAI收割
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 卷号: 53, 期号: 48
作者:  
Guo, Wei;  Xu, Houqiang;  Chen, Li;  Yu, Huabin;  Jiang, Jie'an
  |  收藏  |  浏览/下载:33/0  |  提交时间:2020/12/16
Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects 期刊论文  OAI收割
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 卷号: 53, 期号: 48
作者:  
Guo, Wei;  Xu, Houqiang;  Chen, Li;  Yu, Huabin;  Jiang, Jie'an
  |  收藏  |  浏览/下载:15/0  |  提交时间:2021/12/01
Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates 期刊论文  OAI收割
SUPERLATTICES AND MICROSTRUCTURES, 2019, 卷号: 129, 页码: 20-27
作者:  
Xu, Houqiang;  Jiang, Jie'an;  Sheikhi, Moheb;  Chen, Zhaoying;  Hoo, Jason
  |  收藏  |  浏览/下载:28/0  |  提交时间:2019/12/18
Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps 期刊论文  OAI收割
Crystengcomm, 2019, 卷号: 21, 期号: 33, 页码: 4864-4873
作者:  
K.Jiang;  X.J.Sun;  J.W.Ben;  Z.M.Shi;  Y.P.Jia
  |  收藏  |  浏览/下载:27/0  |  提交时间:2020/08/24
Epitaxial integration of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (111) thin films on GaN (0002) with La0.5Sr0.5CoO3/TiO2 buffer layers 期刊论文  OAI收割
MATERIALS LETTERS, 2018, 卷号: 216, 页码: 224, 227
作者:  
Li, Guanjie;  Li, Xiaomin;  Bi, Zhijie;  Chen, Yongbo;  Xu, Xiaoke
  |  收藏  |  浏览/下载:18/0  |  提交时间:2018/12/28
Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures 期刊论文  OAI收割
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 57, 期号: 3
作者:  
Bo, Baoxue;  Li, Junmei;  Guo, Wei;  Jiang, Jie'an;  Gao, Pingqi
  |  收藏  |  浏览/下载:37/0  |  提交时间:2018/12/04
Reinventing a p-type doping process for stable ZnO light emitting devices 期刊论文  OAI收割
Journal of Physics D-Applied Physics, 2018, 卷号: 51, 期号: 22, 页码: 4
作者:  
Xie, X. H.;  Li, B. H.;  Zhang, Z. Z.;  Shen, D. Z.
  |  收藏  |  浏览/下载:7/0  |  提交时间:2019/09/17
Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si 期刊论文  OAI收割
Light-Science & Applications, 2018, 卷号: 7, 页码: 6
作者:  
Sun, Y.;  Zhou, K.;  Feng, M. X.;  Li, Z. C.;  Zhou, Y.
  |  收藏  |  浏览/下载:7/0  |  提交时间:2019/09/17
Molecular gated-AlGaNGaN high electron mobility transistor for pH detection 期刊论文  OAI收割
Analyst, 2018, 卷号: 143, 期号: 12, 页码: 2784-2789
作者:  
Ding, X. Z.;  Yang, S.;  Miao, B.;  Gu, L.;  Gu, Z. Q.
  |  收藏  |  浏览/下载:11/0  |  提交时间:2019/09/17
The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition 期刊论文  OAI收割
Crystengcomm, 2018, 卷号: 20, 期号: 19, 页码: 2720-2728
作者:  
Jiang, K.;  Sun, X. J.;  Ben, J. W.;  Jia, Y. P.;  Liu, H. N.
  |  收藏  |  浏览/下载:9/0  |  提交时间:2019/09/17