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浏览/检索结果: 共165条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects 期刊论文  OAI收割 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 卷号: 53, 期号: 48 作者:  Guo, Wei;  Xu, Houqiang;  Chen, Li;  Yu, Huabin;  Jiang, Jie'an   |  收藏  |   Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects 期刊论文  OAI收割 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 卷号: 53, 期号: 48 作者:  Guo, Wei;  Xu, Houqiang;  Chen, Li;  Yu, Huabin;  Jiang, Jie'an   |  收藏  |   Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates 期刊论文  OAI收割 SUPERLATTICES AND MICROSTRUCTURES, 2019, 卷号: 129, 页码: 20-27 作者:  Xu, Houqiang;  Jiang, Jie'an;  Sheikhi, Moheb;  Chen, Zhaoying;  Hoo, Jason   |  收藏  |   Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps 期刊论文  OAI收割 Crystengcomm, 2019, 卷号: 21, 期号: 33, 页码: 4864-4873 作者:  K.Jiang;  X.J.Sun;  J.W.Ben;  Z.M.Shi;  Y.P.Jia   |  收藏  |   Epitaxial integration of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (111) thin films on GaN (0002) with La0.5Sr0.5CoO3/TiO2 buffer layers 期刊论文  OAI收割 MATERIALS LETTERS, 2018, 卷号: 216, 页码: 224, 227 作者:  Li, Guanjie;  Li, Xiaomin;  Bi, Zhijie;  Chen, Yongbo;  Xu, Xiaoke   |  收藏  |   Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures 期刊论文  OAI收割 JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 57, 期号: 3 作者:  Bo, Baoxue;  Li, Junmei;  Guo, Wei;  Jiang, Jie'an;  Gao, Pingqi   |  收藏  |   Reinventing a p-type doping process for stable ZnO light emitting devices 期刊论文  OAI收割 Journal of Physics D-Applied Physics, 2018, 卷号: 51, 期号: 22, 页码: 4 作者:  Xie, X. H.;  Li, B. H.;  Zhang, Z. Z.;  Shen, D. Z.   |  收藏  |   Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si 期刊论文  OAI收割 Light-Science & Applications, 2018, 卷号: 7, 页码: 6 作者:  Sun, Y.;  Zhou, K.;  Feng, M. X.;  Li, Z. C.;  Zhou, Y.   |  收藏  |   Molecular gated-AlGaNGaN high electron mobility transistor for pH detection 期刊论文  OAI收割 Analyst, 2018, 卷号: 143, 期号: 12, 页码: 2784-2789 作者:  Ding, X. Z.;  Yang, S.;  Miao, B.;  Gu, L.;  Gu, Z. Q.   |  收藏  |   The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition 期刊论文  OAI收割 Crystengcomm, 2018, 卷号: 20, 期号: 19, 页码: 2720-2728 作者:  Jiang, K.;  Sun, X. J.;  Ben, J. W.;  Jia, Y. P.;  Liu, H. N.   |  收藏  |