机构

• 半导体研究所 [6]
• 物理研究所 [2]
• 长春光学精密机械与物... [1]
• 近代物理研究所 [1]

采集方式

• OAI收割 [10]

内容类型

• 期刊论文 [7]
• 会议论文 [3]

发表日期

• 2006 [1]
• 2005 [2]
• 2002 [2]
• 2000 [1]
• 1999 [2]
• 1997 [1]
• 更多

学科主题

• 半导体材料 [5]
• 半导体物理 [1]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Terahertz pulse generation with LT-GaAs photoconductive antenna 会议论文  OAI收割 joint 31st international conference on infrared and millimeter waves/14th international conference on terahertz electronics, shanghai, peoples r china, sep 18-22, 2006 Cui, LJ (Cui, L. J.); Zeng, YP (Zeng, Y. P.); Zhao, GZ (Zhao, G. Z.) 收藏  |  浏览/下载：166/48  |  提交时间：2010/03/29 TEMPERATURE-GROWN GAAS  CARRIER DYNAMICS  EMISSION   Numerical simulation and experiment of novel semiconductor/superlattice distributed Bragg reflectors (EI CONFERENCE) 会议论文  OAI收割 Optical Transmission, Switching, and Subsystems III, November 7, 2005 - November 10, 2005, Shanghai, China 作者:  Zhao Y.;  Zhao Y.;  Zhao Y.;  Wang X.;  Wang X. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 We introduced a novel semiconductor/superlattice AlAs/(GaAs/AlAs) distributed Bragg reflector (DBR)  and the reflection spectrum of the DBR at 980nm wavelength is simulated by employing transfer matrix method. By adjusting the thickness of AlAs layer and the period of superlattice GaAs/AlAs  the DBR with center wavelength at 1500nm is also investigated theoretically. In experiment  this kind of DBR is grown on GaAs (100) substrate. From the measured reflection spectrum  the central wavelength is about 980 nm with high reflectivity.   Characteristics of THz emission from GaAs crystal excited by 400 nm and 800 nm optical pulses 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2005, 卷号: 22, 期号: 8, 页码: 2123 Yang, YP; Xu, XL; Yan, W; Wang, L 收藏  |  浏览/下载：30/0  |  提交时间：2013/09/17 TEMPERATURE-GROWN GAAS  SEMIINSULATING GAAS  TERAHERTZ RADIATION  GENERATION  ANTENNAS   Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry 期刊论文  OAI收割 materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 62-65 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：68/4  |  提交时间：2010/08/12 reflectance-difference spectroscopy  indium segregation  InGaAs/GaAs quantum wells  EPITAXY-GROWN INGAAS/GAAS  SURFACE SEGREGATION  INTERFACE   Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry 会议论文  OAI收割 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：18/0  |  提交时间：2010/11/15 reflectance-difference spectroscopy  indium segregation  InGaAs/GaAs quantum wells  EPITAXY-GROWN INGAAS/GAAS  SURFACE SEGREGATION  INTERFACE   Investigation of defects in low-temperature-grown GaAs using optical transient spectroscopy 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 220, 期号: 4, 页码: 351-354 Zhang YH; Lu LW; Zhang MH; Huang Q; Bao CL; Zhou JM 收藏  |  浏览/下载：52/0  |  提交时间：2010/08/12 low-temperature-grown GaAs  optical transient spectroscopy  BEAM-EPITAXIAL GAAS   Positron beam study of low-temperature-grown GaAs with aluminum delta layers 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 1999, 卷号: 149, 页码: 159-164 作者:  Fleischer, S;  Hu, YF;  Beling, CD;  Fung, S;  Smith, TL   |  收藏  |  浏览/下载：13/0  |  提交时间：2018/05/31 positron beam  low-temperature-grown GaAs  aluminum delta layers   A Raman scattering study of GaAs: As films lifted off GaAs substrate 期刊论文  OAI收割 journal of physics d-applied physics, 1999, 卷号: 32, 期号: 6, 页码: 629-631 作者:  Jiang DS 收藏  |  浏览/下载：32/0  |  提交时间：2010/08/12 TEMPERATURE-GROWN GAAS   Photoluminescence of low-temperature AlGaAs/GaAs multiple quantum wells 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 1997, 卷号: 175, 页码: 1173 Feng, W; Chen, F; Huang, Q; Zhou, JM 收藏  |  浏览/下载：27/0  |  提交时间：2013/09/24 MOLECULAR-BEAM EPITAXY  GROWN GAAS   THEORETICAL INVESTIGATION OF THE DYNAMIC PROCESS OF THE ILLUMINATION OF GAAS 期刊论文  OAI收割 physical review b, 1994, 卷号: 50, 期号: 8, 页码: 5189-5195 REN GB; WANG ZG; XU B; BING Z 收藏  |  浏览/下载：62/0  |  提交时间：2010/11/15 SPIN-RESONANCE SIGNAL  ASGA ANTISITE DEFECT  METASTABLE EL2  GROWN GAAS  PHOTOCONDUCTIVITY  PHOTORESPONSE  PHOTOCURRENT  SPECTRUM  RECOVERY