中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
半导体研究所 [6]
物理研究所 [2]
长春光学精密机械与物... [1]
近代物理研究所 [1]
采集方式
OAI收割 [10]
内容类型
期刊论文 [7]
会议论文 [3]
发表日期
2006 [1]
2005 [2]
2002 [2]
2000 [1]
1999 [2]
1997 [1]
更多
学科主题
半导体材料 [5]
半导体物理 [1]
筛选
浏览/检索结果:
共10条,第1-10条
帮助
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
提交时间升序
提交时间降序
发表日期升序
发表日期降序
题名升序
题名降序
作者升序
作者降序
Terahertz pulse generation with LT-GaAs photoconductive antenna
会议论文
OAI收割
joint 31st international conference on infrared and millimeter waves/14th international conference on terahertz electronics, shanghai, peoples r china, sep 18-22, 2006
Cui, LJ (Cui, L. J.)
;
Zeng, YP (Zeng, Y. P.)
;
Zhao, GZ (Zhao, G. Z.)
收藏
  |  
Numerical simulation and experiment of novel semiconductor/superlattice distributed Bragg reflectors (EI CONFERENCE)
会议论文
OAI收割
Optical Transmission, Switching, and Subsystems III, November 7, 2005 - November 10, 2005, Shanghai, China
作者:
Zhao Y.
;
Zhao Y.
;
Zhao Y.
;
Wang X.
;
Wang X.
收藏
  |  
Characteristics of THz emission from GaAs crystal excited by 400 nm and 800 nm optical pulses
期刊论文
OAI收割
CHINESE PHYSICS LETTERS, 2005, 卷号: 22, 期号: 8, 页码: 2123
Yang, YP
;
Xu, XL
;
Yan, W
;
Wang, L
收藏
  |  
Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry
期刊论文
OAI收割
materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 62-65
作者:
Ye XL
;
Xu B
收藏
  |  
Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry
会议论文
OAI收割
9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001
作者:
Xu B
;
Ye XL
收藏
  |  
Investigation of defects in low-temperature-grown GaAs using optical transient spectroscopy
期刊论文
OAI收割
journal of crystal growth, 2000, 卷号: 220, 期号: 4, 页码: 351-354
Zhang YH
;
Lu LW
;
Zhang MH
;
Huang Q
;
Bao CL
;
Zhou JM
收藏
  |  
Positron beam study of low-temperature-grown GaAs with aluminum delta layers
期刊论文
OAI收割
APPLIED SURFACE SCIENCE, 1999, 卷号: 149, 页码: 159-164
作者:
Fleischer, S
;
Hu, YF
;
Beling, CD
;
Fung, S
;
Smith, TL
  |  
收藏
  |  
A Raman scattering study of GaAs: As films lifted off GaAs substrate
期刊论文
OAI收割
journal of physics d-applied physics, 1999, 卷号: 32, 期号: 6, 页码: 629-631
作者:
Jiang DS
收藏
  |  
Photoluminescence of low-temperature AlGaAs/GaAs multiple quantum wells
期刊论文
OAI收割
JOURNAL OF CRYSTAL GROWTH, 1997, 卷号: 175, 页码: 1173
Feng, W
;
Chen, F
;
Huang, Q
;
Zhou, JM
收藏
  |  
THEORETICAL INVESTIGATION OF THE DYNAMIC PROCESS OF THE ILLUMINATION OF GAAS
期刊论文
OAI收割
physical review b, 1994, 卷号: 50, 期号: 8, 页码: 5189-5195
REN GB
;
WANG ZG
;
XU B
;
BING Z
收藏
  |