机构

• 半导体研究所 [9]
• 长春光学精密机械与物... [2]
• 计算技术研究所 [1]
• 高能物理研究所 [1]
• 自动化研究所 [1]
• 上海技术物理研究所 [1]
• 更多

采集方式

• OAI收割 [13]
• iSwitch采集 [3]

内容类型

• 期刊论文 [13]
• 会议论文 [3]

发表日期

• 2022 [1]
• 2021 [1]
• 2019 [3]
• 2012 [1]
• 2011 [2]
• 2010 [2]
• 更多

学科主题

• 光电子学 [3]
• 半导体材料 [3]
• Spectrosco... [1]

筛选

浏览/检索结果: 共16条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Generative Adversarial Network Based Heuristics for Sampling-Based Path Planning 期刊论文  OAI收割 IEEE/CAA Journal of Automatica Sinica, 2022, 卷号: 9, 期号: 1, 页码: 64-74 作者:  Tianyi Zhang;  Jiankun Wang;  Max Q.-H. Meng   |  收藏  |  浏览/下载：60/0  |  提交时间：2021/11/03 Generative adversarial network (GAN)  optimal path planning  robot path planning  sampling-based path planning   Magnetic and structural properties of Fe-implanted GaN at room temperature 期刊论文  OAI收割 VACUUM, 2021, 卷号: 184, 页码: 9 作者:  Li, Bingsheng;  Peng, Dingping;  Li, Junhan;  Kang, Long;  Zhang, Tongmin   |  收藏  |  浏览/下载：58/0  |  提交时间：2021/12/10 GaN-Based diluted magnetic semiconductor  Fe implantation  Ferromagnetism  Raman spectroscopy  Positron annihilation spectroscopy   Deep Hashing Based on VAE-GAN for Efficient Similarity Retrieval 期刊论文  OAI收割 CHINESE JOURNAL OF ELECTRONICS, 2019, 卷号: 28, 期号: 6, 页码: 1191-1197 作者:  Jin, Guoqing;  Zhang, Yongdong;  Lu, Ke   |  收藏  |  浏览/下载：24/0  |  提交时间：2020/12/10 file organisation  image retrieval  learning (artificial intelligence)  neural nets  pairwise hashing learning  semantic perserving feature mapping model  adversarial generative process  image feature vector  hash codes  pairwise ranking loss  generative networks  VAE-GAN based hashing framework  image retrieval  content preserving images  similarity retrieval  variational autoencoder  generative adversarial network  Image retrieval  Learning to hash  Variational autoencoder(VAE)  Generative adversarial network(GAN)   Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations 期刊论文  OAI收割 Journal of Alloys and Compounds, 2019, 卷号: 775, 页码: 1213-1220 作者:  Y.P.Chen;  C.H.Zheng;  L.Q.Hu;  Y.R.Chen   |  收藏  |  浏览/下载：21/0  |  提交时间：2020/08/24 GaN-based ultroviolet photodetectors,ZnO nanorods modification,Screw,dislocation passivation,Photoelectric performance improvement   Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes 期刊论文  OAI收割 Nanomaterials, 2019, 卷号: 9, 期号: 3, 页码: 8 作者:  H.Wan;  B.Tang;  N.Li;  S.J.Zhou;  C.Q.Gui   |  收藏  |  浏览/下载：26/0  |  提交时间：2020/08/24 GaN-based UV LED,wet chemical etching,prism-structured sidewall,crystal orientation,light extraction,efficiency,surface,plane,enhancement,extraction,layer,Science & Technology - Other Topics,Materials Science   Study the Effect of Junction Temperature on the Peak Wavelength in GaN-Based High-Power Green Light Emitting Diodes 会议论文  OAI收割 International Conference on Chemical, Material and Metallurgical Engineering (ICCMME 2011) - 收藏  |  浏览/下载：25/0  |  提交时间：2016/05/16 GaN-based  Power-LED  Junction temperature  Peak wavelength   Optimized growth of p-type algan electron blocking layer in the gan-based led 期刊论文  iSwitch采集 Acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: 6 作者:  Wang Bing;  Li Zhi-Cong;  Yao Ran;  Liang Meng;  Yan Fa-Wang 收藏  |  浏览/下载：44/0  |  提交时间：2019/05/12 Gan-based  Led  Al composition  Electron blocking layer   Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文  OAI收割 acta physica sinica, ACTA PHYSICA SINICA, 2011, 2011, 卷号: 60, 60, 期号: 1, 页码: article no.16108, Article no.16108 作者:  Wang B;  Li ZC;  Yao R;  Liang M;  Yan FW   |  收藏  |  浏览/下载：114/5  |  提交时间：2011/07/05 GaN-based  LED  Al composition  electron blocking layer  TEMPERATURE  ALLOYS  MOVPE  Gan-based  Led  Al Composition  Electron Blocking Layer  Temperature  Alloys  Movpe   Ferromagnetic modification of gan film by cu+ ions implantation 期刊论文  iSwitch采集 Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 2010, 卷号: 268, 期号: 2, 页码: 123-126 作者:  Zhang, B.;  Chen, C. C.;  Yang, C.;  Wang, J. Z.;  Shi, L. Q. 收藏  |  浏览/下载：45/0  |  提交时间：2019/05/12 Nonmagnetic element doped semiconductor  Cu ion implantation  Gan-based dms   Ferromagnetic modification of GaN film by Cu+ ions implantation 期刊论文  OAI收割 nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 2010, 卷号: 268, 期号: 2, 页码: 123-126 作者:  Zhao DG 收藏  |  浏览/下载：113/5  |  提交时间：2010/04/22 Nonmagnetic element doped semiconductor  Cu ion implantation  GaN-based DMS  PIXE ANALYSIS  DOPED ZNO  MN  CR