中国科学院机构知识库网格系统: 检索

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	Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文 OAI收割 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016 Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW 收藏 \| 浏览/下载：69/10 \| 提交时间：2011/07/05 UNDOPED GALLIUM ANTIMONIDE SELF-DIFFUSION NATIVE DEFECTS N-TYPE CRYSTALS CATHODOLUMINESCENCE PHOTOLUMINESCENCE SEMICONDUCTORS SPECTROSCOPY LUMINESCENCE
	Molecular beam epitaxy of gasb on gaas substrates with alsb/gasb compound buffer layers 期刊论文 iSwitch采集 Thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230 作者: Hao, Ruiting; Deng, Shukang; Shen, Lanxian; Yang, Peizhi; Tu, Jielei 收藏 \| 浏览/下载：37/0 \| 提交时间：2019/05/12 Gallium arsenide Gallium antimonide Gallium antimonide/aluminum antimonide Superlattices Molecular beam epitaxy
	Evaluation of thermal radiation dependent performance of gasb thermophotovoltaic cell based on an analytical absorption coefficient model 期刊论文 iSwitch采集 Solar energy materials and solar cells, 2010, 卷号: 94, 期号: 10, 页码: 1704-1710 作者: Wang, Y.; Chen, N. F.; Zhang, X. W.; Huang, T. M.; Yin, Z. G. 收藏 \| 浏览/下载：26/0 \| 提交时间：2019/05/12 Thermophotovoltaic Gallium antimonide Absorption coefficient
	Evaluation of thermal radiation dependent performance of GaSb thermophotovoltaic cell based on an analytical absorption coefficient model 期刊论文 OAI收割 solar energy materials and solar cells, 2010, 卷号: 94, 期号: 10, 页码: 1704-1710 Wang Y (Wang Y.); Chen NF (Chen N. F.); Zhang XW (Zhang X. W.); Huang TM (Huang T. M.); Yin ZG (Yin Z. G.); Wang YS (Wang Y. S.); Zhang H (Zhang H.) 收藏 \| 浏览/下载：198/22 \| 提交时间：2010/09/07 Thermophotovoltaic Gallium antimonide Absorption coefficient
	Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文 OAI收割 thin solid films, THIN SOLID FILMS, 2010, 2010, 卷号: 519, 519, 期号: 1, 页码: 228-230, 228-230 作者: Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei) \| 收藏 \| 浏览/下载：51/0 \| 提交时间：2010/12/28 Gallium Arsenide Gallium Arsenide Gallium Antimonide Gallium Antimonide/aluminum Antimonide Superlattices Molecular Beam Epitaxy Vapor-phase Epitaxy Surface-morphology Growth Superlattices Temperature Relaxation Detectors Gaas(001) Mocvd Films Gallium antimonide Gallium antimonide/Aluminum antimonide Superlattices Molecular Beam Epitaxy VAPOR-PHASE EPITAXY SURFACE-MORPHOLOGY GROWTH SUPERLATTICES TEMPERATURE RELAXATION DETECTORS GAAS(001) MOCVD FILMS
	Excitonic photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films 期刊论文 OAI收割 journal of luminescence, 2002, 卷号: 99, 期号: 3, 页码: 273-281 Liu FM; Wang TM; Zhang LD; Li GH; Han HX 收藏 \| 浏览/下载：68/0 \| 提交时间：2010/08/12 nanocrystals photoluminescence quantum confinement GaSb Ga0.62In0.38Sb LIQUID-PHASE EPITAXY X-RAY PHOTOELECTRON GALLIUM ANTIMONIDE COMPOSITE FILMS QUANTUM DOTS RAMAN SPECTROSCOPY DEPOSITION SPECTRA MATRIX
	MOCVD GAINASSB HETEROSTRUCTURE MATERIALS FOR 2-4-MU-M PHOTODETECTORS 期刊论文 OAI收割 COMPOUND SEMICONDUCTORS 1994, 1995, 期号: 141, 页码: 603-606 WEI,GY; PENG,RW; WU,W 收藏 \| 浏览/下载：24/0 \| 提交时间：2012/03/25 P-N PHOTODIODES GALLIUM ANTIMONIDE MU-M GROWTH EPITAXY GASB WAVELENGTH RANGE SNTE
	GROWTH-KINETICS OF GASB BY METALORGANIC VAPOR-PHASE EPITAXY 期刊论文 OAI收割 JOURNAL OF ELECTRONIC MATERIALS, 1994, 卷号: 23, 期号: 2, 页码: 217-220 WEI, GY; PENG, RW 收藏 \| 浏览/下载：15/0 \| 提交时间：2012/03/25 GALLIUM ANTIMONIDE MOVPE
	GROWTH OF GASB AND GAASSB IN THE SINGLE-PHASE REGION BY MOVPE 期刊论文 OAI收割 journal of crystal growth, 1992, 卷号: 124, 期号: 0, 页码: 383-388 LU DC; LIU XL; WANG D; LIN LY 收藏 \| 浏览/下载：29/0 \| 提交时间：2010/11/15 GALLIUM ANTIMONIDE OMVPE GAAS1-XSBX MOCVD