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浏览/检索结果: 共84条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 1 meV electron irradiation and post-annealing effects of GaInAsN diluted nitride alloy with 1 eV bandgap energy 期刊论文  OAI收割 THIN SOLID FILMS, 2020, 卷号: 709, 期号: 9, 页码: 1-5 作者:  Sailai, M (Sailai, Momin)[ 1 ];  Lei, QQ (Lei, Qi Qi)[ 1,2 ];  Aierken, A (Aierken, Abuduwayiti)[ 1,3 ];  Heini, M (Heini, Maliya)[ 1,4 ];  Zhao, XF (Zhao, Xiao Fan)[ 1 ]   |  收藏  |  浏览/下载：40/0  |  提交时间：2020/10/23 Gallium indium arsenide nitride alloy  Electron irradiation  Photoluminescence  Thermal annealing  Arrhenius plot   Measurement of excited layer thickness in highly photo-excited GaAs 会议论文  OAI收割 international symposium on optical measurement technology and instrumentation, beijing, china, 2016-05-09 作者:  Liang, Lingliang;  Tian, Jinshou;  Wang, Tao;  Wu, Shengli;  Li, Fuli 收藏  |  浏览/下载：38/0  |  提交时间：2017/01/17 Gallium arsenide  Optical data processing  Optical variables measurement  Probes  Semiconducting gallium   numerical simulation of high-efficiency ingap/gaas/ingaas triple-junction solar cells grown on gaas substrate 会议论文  OAI收割 12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012, Shanghai, China, August 28, 2012 - August 31, 2012 Liang J.; Hu W.D.; Chen X.S.; Xia C.S.; Cheng L.W.   |  收藏  |  浏览/下载：16/0  |  提交时间：2013/09/22 Computer simulation  Conversion efficiency  Gallium arsenide  Optimization  Solar cells   Spatial hole burning degradation of algaas/gaas laser diodes 期刊论文  iSwitch采集 Applied physics letters, 2011, 卷号: 99, 期号: 10, 页码: 3 作者:  Qiao, Y. B.;  Feng, S. W.;  Xiong, C.;  Wang, X. W.;  Ma, X. Y. 收藏  |  浏览/下载：38/0  |  提交时间：2019/05/12 Aluminium compounds  Carrier density  Cathodoluminescence  Gallium arsenide  Iii-v semiconductors  Optical hole burning  Optical microscopy  Quantum well lasers  Semiconductor epitaxial layers  X-ray diffraction   Determining the sign of g factor via time-resolved kerr rotation spectroscopy with a rotatable magnetic field 期刊论文  iSwitch采集 Chinese physics b, 2011, 卷号: 20, 期号: 8, 页码: 4 作者:  Gu Xiao-Fang;  Qian Xuan;  Ji Yang;  Chen Lin;  Zhao Jian-Hua 收藏  |  浏览/下载：30/0  |  提交时间：2019/05/12 G factor  Time-resolved kerr rotation  Gallium arsenide  Rotatable magnetic field   Metal electrode influence on the wet selective etching of gaas/algaas 期刊论文  iSwitch采集 Journal of vacuum science & technology b, 2011, 卷号: 29, 期号: 4, 页码: 4 作者:  Wang Jie;  Han Qin;  Yang Xiao-Hong;  Wang Xiu-Ping;  Ni Hai-Qiao 收藏  |  浏览/下载：126/0  |  提交时间：2019/05/12 Aluminium compounds  Chromium alloys  Copper alloys  Electrochemical analysis  Electrochemical electrodes  Etching  Gallium arsenide  Gold alloys  Iii-v semiconductors  Metallic thin films  Titanium alloys   Study of molecular-beam epitaxy growth on patterned gaas (1 0 0) substrates by masked indium ion implantation 期刊论文  iSwitch采集 Journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575 作者:  Zhou, Huiying;  Qu, Shengchun;  Jin, Peng;  Xu, Bo;  Ye, Xiaoling 收藏  |  浏览/下载：48/0  |  提交时间：2019/05/12 Atom force microscopy  Nanostructures  Molecular-beam epitaxy  Nanomaterials  Semiconducting gallium arsenide   Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575 作者:  Xu B;  Jin P;  Ye XL 收藏  |  浏览/下载：75/1  |  提交时间：2011/07/05 Atom force microscopy  Nanostructures  Molecular-beam epitaxy  Nanomaterials  Semiconducting gallium arsenide  QUANTUM-DOTS  ANODIC ALUMINA  ARRAYS  PLACEMENT  INAS   Fabrication of a novel lumped electro-absorption modulator with a lower RC-time constant 期刊论文  OAI收割 journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 105002 Qiu, Yingping; Wang, Yang; Shao, Yongbo; Zhou, Daibing; Liang, Song; Zhao, Lingjuan; Wang, Wei 收藏  |  浏览/下载：15/0  |  提交时间：2012/06/14 Absorption  Capacitance  Fabrication  Light extinction  Semiconducting indium gallium arsenide  Waveguides   Thermal characteristic of GaAs-based laser diodes 期刊论文  OAI收割 hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 11, 页码: 2134-2137 Qiao, Yanbin; Feng, Shiwei; Ma, Xiaoyu; Wang, Xiaowei; Guo, Chunsheng; Deng, Haitao; Zhang, Guangchen 收藏  |  浏览/下载：42/0  |  提交时间：2012/06/14 Degradation  Diodes  Electric properties  Gallium arsenide  Hybrid materials  Optical properties  Semiconducting gallium  Semiconductor diodes  Testing  Thermodynamic properties