机构

• 合肥物质科学研究院 [4]
• 金属研究所 [2]
• 苏州纳米技术与纳米仿... [2]
• 半导体研究所 [2]
• 物理研究所 [1]
• 化学研究所 [1]
• 更多

采集方式

• OAI收割 [10]
• iSwitch采集 [2]

内容类型

• 期刊论文 [12]

发表日期

• 2017 [3]
• 2016 [2]
• 2015 [2]
• 2010 [3]
• 2006 [1]
• 2004 [1]
• 更多

学科主题

• 半导体材料 [1]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Designing hybrid gate dielectric for fully printing high-performance carbon nanotube thin film transistors 期刊论文  iSwitch采集 Nanotechnology, 2017, 卷号: 28, 期号: 43 作者:  Li,Qian;  Li,Shilong;  Yang,Dehua;  Su,Wei;  Wang,Yanchun 收藏  |  浏览/下载：66/0  |  提交时间：2019/05/09 Carbon nanotubes  Thin-film transistors  Hybrid gate dielectric  Fully printing  High performance   Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6 作者:  He, Gang;  Jiang, Shanshan;  Li, Wendong;  Zheng, Changyong;  He, Huaxin 收藏  |  浏览/下载：44/0  |  提交时间：2018/05/25 High-k Gate Dielectric  Atomic-layer-deposition  Interface Stability  Phase Separation  Annealing Temperature   Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics 期刊论文  OAI收割 JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2017, 卷号: 83, 期号: 3, 页码: 675-682 作者:  Zhu, L.;  He, G.;  Sun, Z. Q.;  Liu, M.;  Jiang, S. S.   |  收藏  |  浏览/下载：33/0  |  提交时间：2018/08/16 Gd-doped Zro2 Gate Dielectric Thin Films  Annealing Temperature  Sol-gel  Optical Properties  Electrical Properties   Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack 期刊论文  OAI收割 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 期号: 8, 页码: 8075-8082 作者:  Gao, Juan;  He, Gang;  Zhang, Jiwen;  Chen, Xuefei;  Jin, Peng 收藏  |  浏览/下载：26/0  |  提交时间：2017/11/21 High-k Gate Dielectric  Atomic Layer Deposition  Electrical Properties  Leakage Current Mechanism   Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 667, 期号: 无, 页码: 352-358 作者:  Gao, Juan;  He, Gang;  Sun, Zhaoqi;  Chen, Hanshuang;  Zheng, Changyong 收藏  |  浏览/下载：26/0  |  提交时间：2017/10/18 High-k Gate Dielectric  Atomic-layer-deposition  Electrical Properties  Carrier Transportation Mechanism  Incorporation   GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2015, 卷号: 36, 期号: 5, 页码: 3 作者:  Hua, MY;  Liu, C;  Yang, S;  Liu, SH;  Fu, K(付凯) 收藏  |  浏览/下载：115/0  |  提交时间：2015/12/31 Gallium nitride  MIS-HEMT  LPCVD  silicon nitride  gate dielectric   Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs 期刊论文  OAI收割 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 卷号: 62, 期号: 10, 页码: 8 作者:  Hua, MY;  Liu, C;  Yang, S;  Liu, SH;  Fu, K 收藏  |  浏览/下载：38/0  |  提交时间：2015/12/31 Gallium nitride  gate dielectric  low-pressure chemical vapor deposition (LPCVD)  silicon nitride   Valence band offset of mgo/tio2 (rutile) heterojunction measured by x-ray photoelectron spectroscopy 期刊论文  iSwitch采集 Applied surface science, 2010, 卷号: 256, 期号: 23, 页码: 7327-7330 作者:  Zheng, Gaolin;  Wang, Jun;  Liu, Xianglin;  Yang, Anli;  Song, Huaping 收藏  |  浏览/下载：38/0  |  提交时间：2019/05/12 Mgo  Rutile  Band offset  X-ray photoelectron spectroscopy  Gate dielectric  Dye-sensitized solar cells   Reversible Photomodulation of Organic Transistor Performance by Conformation-Induced Capacitive Coupling 期刊论文  OAI收割 ACTA PHYSICO-CHIMICA SINICA, 2010, 卷号: 26, 期号: 7, 页码: 1941-1946 作者:  Shen Qian;  Gan Lin;  Liu Song;  Cao Yang;  Wang Zhen-Xing   |  收藏  |  浏览/下载：20/0  |  提交时间：2019/04/09 Photoisomerization  Photochromic Spiropyran  Thin-film Transistor  Gate Dielectric   Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy 期刊论文  OAI收割 applied surface science, 2010, 卷号: 256, 期号: 23, 页码: 7327-7330 Zheng GL (Zheng Gaolin); Wang J (Wang Jun); Liu XL (Liu Xianglin); Yang AL (Yang Anli); Song HP (Song Huaping); Guo Y (Guo Yan); Wei HY (Wei Hongyuan); Jiao CM (Jiao Chunmei); Yang SY (Yang Shaoyan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：173/22  |  提交时间：2010/08/17 MgO  Rutile  Band offset  X-ray photoelectron spectroscopy  Gate dielectric  Dye-sensitized solar cells