机构

• 半导体研究所 [23]
• 苏州纳米技术与纳米... [13]
• 长春应用化学研究所 [4]
• 上海微系统与信息技术... [3]
• 物理研究所 [2]
• 金属研究所 [2]
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采集方式

• OAI收割 [39]
• iSwitch采集 [10]

内容类型

• 期刊论文 [45]
• 会议论文 [4]

发表日期

• 2018 [2]
• 2015 [6]
• 2014 [2]
• 2013 [3]
• 2012 [1]
• 2011 [5]
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学科主题

• 半导体材料 [7]
• 半导体物理 [3]
• 光电子学 [2]
• Atomic [1]
• Chemistry,... [1]
• Crystallog... [1]
• 更多

筛选

浏览/检索结果: 共49条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 High-performance phototransistor based on individual high electron mobility MnWO4 nanoplate 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 卷号: 762, 页码: 933-940 作者:  Zhang, XL;  Jiang, YA;  Liu, BD;  Yang, WJ;  Li, J   |  收藏  |  浏览/下载：28/0  |  提交时间：2018/12/25 MnWO4 nanoplates  Phototransistors  High electron mobility  Excellent optoelectronic performance   Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector 期刊论文  OAI收割 CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 4 作者:  Li, Jin-Lun;  Cui, Shao-Hui;  Xu, Jian-Xing;  Cui, Xiao-Ran;  Guo, Chun-Yan   |  收藏  |  浏览/下载：49/0  |  提交时间：2018/05/14 Thz Detector  High Electron Mobility Transistor  Two-dimensional Electron Gas  Inp   Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure 期刊论文  OAI收割 CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 9, 页码: 4 作者:  He, XG;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Chen, P 收藏  |  浏览/下载：22/0  |  提交时间：2015/12/31 high electron mobility transistor  two-dimensional electron gas  GaN   Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor 期刊论文  OAI收割 CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 10, 页码: 4 作者:  Zhang, XY(张晓渝);  Tan, RB(谭仁兵);  Sun, JD(孙建东);  Li, XX(李欣幸);  Zhou, Y(周宇) 收藏  |  浏览/下载：30/0  |  提交时间：2015/12/31 radio-frequency circuit  high electron mobility transistor   Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2015, 卷号: 36, 期号: 11, 页码: 4 作者:  Zhang, ZL(张志利);  Fu, K(付凯);  Deng, XG(邓旭光);  Zhang, XD(张晓东);  Fan, YM(范亚明) 收藏  |  浏览/下载：77/0  |  提交时间：2015/12/31 AlGaN/GaN high electron mobility transistor (HEMT)  standard fluorine ion implantation  normally off   Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor 期刊论文  OAI收割 CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 2, 页码: 5 作者:  Lu, L;  Sun, JD（孙建东）;  Lewis, RA;  Sun, YF（孙云飞）;  Wu, DM(吴东岷) 收藏  |  浏览/下载：43/0  |  提交时间：2015/12/31 terahertz detector  terahertz antenna  near-field probe  high electron mobility transistor   High Mobility Ambipolar Diketopyrrolopyrrole-Based Conjugated Polymer Synthesized Via Direct Arylation Polycondensation 期刊论文  OAI收割 advanced materials, 2015, 卷号: 27, 期号: 42, 页码: 6753-+ 作者:  Gao,Yao;  Zhang,Xiaojie;  Tian,Hongkun;  Zhang,Jidong;  Yan,Donghang 收藏  |  浏览/下载：51/0  |  提交时间：2016/04/29 FIELD-EFFECT TRANSISTORS  HIGH-ELECTRON-MOBILITY  HIGH-PERFORMANCE  DIRECT (HETERO)ARYLATION  DIRECT HETEROARYLATION  EFFICIENT APPROACH  BUILDING-BLOCK  SOLAR-CELLS  HIGH HOLE  COPOLYMERS   Donor-acceptor-donor conjugated oligomers based on isoindigo and anthra[1,2-b]thieno[2,3-d]thiophene for organic thin-film transistors: the effect of the alkyl side chain length on semiconducting properties 期刊论文  OAI收割 journal of materials chemistry c, 2015, 卷号: 3, 期号: 29, 页码: 7567-7574 作者:  Shao,Jing;  Zhang,Xiaojie;  Tian,Hongkun;  Geng,Yanhou;  Wang,Fosong 收藏  |  浏览/下载：35/0  |  提交时间：2016/05/12 FIELD-EFFECT TRANSISTORS  HIGH-PERFORMANCE AMBIPOLAR  HIGH-HOLE-MOBILITY  HETEROJUNCTION SOLAR-CELLS  BAND-GAP POLYMERS  SMALL-MOLECULE  ELECTRON MOBILITIES  AMORPHOUS-SILICON  DIKETOPYRROLOPYRROLE  COPOLYMER   Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition 期刊论文  OAI收割 THIN SOLID FILMS, 2014, 卷号: 564, 期号: 0, 页码: 135-139 作者:  Yang H(杨辉) 收藏  |  浏览/下载：23/0  |  提交时间：2014/12/02 Carbon impurity  Metalorganic chemical vapor deposition  High-resistance gallium nitride  High electron mobility transistors   Research on biomolecule-gate AlGaN/GaN high-electron-mobility transistor biosensors 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 7 作者:  Wu, DM (吴东岷);  Li, JD (李加东) 收藏  |  浏览/下载：28/0  |  提交时间：2015/02/03 two-dimensional electron gas  high electron mobility transistor  biosensor  prostate specific antigen