中国科学院机构知识库网格系统: 检索

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	Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence 期刊论文 OAI收割 Materials, 2018, 卷号: 11, 期号: 6, 页码: 11 作者: Song, Y.; Zhang, L. G.; Zeng, Y. G.; Qin, L.; Zhou, Y. L. \| 收藏 \|
	Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes 期刊论文 iSwitch采集 Chinese physics, 2007, 卷号: 16, 期号: 3, 页码: 817-820 作者: Fu Sheng-Hui; Song Guo-Feng; Chen Liang-Hui 收藏 \|
	Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes 期刊论文 OAI收割 chinese physics, 2007, 卷号: 16, 期号: 3, 页码: 817-820 Fu SH (Fu Sheng-Hui); Song GF (Song Guo-Feng); Chen LH (Chen Liang-Hui) 收藏 \|
	AlGaInAs narrow stripe selective growth on substrates patterned with different mask designs 期刊论文 OAI收割 journal of physics d-applied physics, 2006, 卷号: 39, 期号: 11, 页码: 2330-2334 作者: Pan JQ 收藏 \|
	Fabrication of ingaas quantum dots with an underlying ingaalas layer on gaas(100) and high index substrates by molecular beam epitaxy 期刊论文 iSwitch采集 Journal of crystal growth, 1999, 卷号: 205, 期号: 4, 页码: 607-612 作者: Jiang, WH; Xu, HZ; Xu, B; Wu, J; Ye, XL 收藏 \|
	Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy 期刊论文 OAI收割 journal of crystal growth, 1999, 卷号: 205, 期号: 4, 页码: 607-612 作者: Ye XL; Xu B 收藏 \|
	Raman scattering from in1-x-ygaxalyas quaternary alloys 期刊论文 iSwitch采集 Journal of infrared and millimeter waves, 1998, 卷号: 17, 期号: 3, 页码: 187-191 作者: Han, HX; Wang, ZP; Li, GH; Xu, SJ; Ding, K 收藏 \|
	Raman scattering from In1-x-yGaxAlyAs quaternary alloys 期刊论文 OAI收割 journal of infrared and millimeter waves, 1998, 卷号: 17, 期号: 3, 页码: 187-191 Han HX; Wang ZP; Li GH; Xu SJ; Ding K; Liu NZ; Zhu ZM 收藏 \|