机构

• 半导体研究所 [10]

采集方式

• OAI收割 [7]
• iSwitch采集 [3]

内容类型

• 期刊论文 [8]
• 会议论文 [2]

发表日期

• 2002 [3]
• 2000 [4]
• 1998 [3]

学科主题

• 半导体材料 [5]
• 半导体物理 [2]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Detection of indium segregation effects in ingaas/gaas quantum wells using reflectance-difference spectrometry 期刊论文  iSwitch采集 Materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 页码: 62-65 作者:  Ye, XL;  Chen, YH;  Xu, B;  Wang, ZG 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 Reflectance-difference spectroscopy  Indium segregation  Ingaas/gaas quantum wells   Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry 期刊论文  OAI收割 materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 62-65 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：68/4  |  提交时间：2010/08/12 reflectance-difference spectroscopy  indium segregation  InGaAs/GaAs quantum wells  EPITAXY-GROWN INGAAS/GAAS  SURFACE SEGREGATION  INTERFACE   Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry 会议论文  OAI收割 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：18/0  |  提交时间：2010/11/15 reflectance-difference spectroscopy  indium segregation  InGaAs/GaAs quantum wells  EPITAXY-GROWN INGAAS/GAAS  SURFACE SEGREGATION  INTERFACE   Effect of rapid thermal annealing on ingaas/gaas quantum wells 期刊论文  iSwitch采集 Journal of crystal growth, 2000, 卷号: 212, 期号: 1-2, 页码: 352-355 作者:  Zhuang, QD;  Li, JM;  Zeng, YP;  Yoon, SF;  Zheng, HQ 收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12 Annealing  Ingaas/gaas  Quantum wells  Interdiffusion  Quantum dots  Mbe   Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 期刊论文  OAI收割 physica e, 2000, 卷号: 8, 期号: 2, 页码: 134-140 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：64/0  |  提交时间：2010/08/12 quantum dots  high index  molecular beam epitaxy  photoluminescence  SURFACE SEGREGATION  ORIENTED GAAS  INGAAS  ISLANDS  WELLS  DISKS   Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文  OAI收割 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：22/0  |  提交时间：2010/11/15 quantum dots  high index  molecular beam epitaxy  photoluminescence  SURFACE SEGREGATION  ORIENTED GAAS  INGAAS  ISLANDS  WELLS  DISKS   Effect of rapid thermal annealing on InGaAs/GaAs quantum wells 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 212, 期号: 1-2, 页码: 352-355 Zhuang QD; Li JM; Zeng YP; Yoon SF; Zheng HQ; Kong MY; Lin LY 收藏  |  浏览/下载：71/0  |  提交时间：2010/08/12 annealing  InGaAs/GaAs  quantum wells  interdiffusion  quantum dots  MBE  DOT SUPERLATTICE   Threshold reduction in strained-layer ingaas/gaas quantum well lasers by liquid phase epitaxy regrowth 期刊论文  iSwitch采集 Journal of crystal growth, 1998, 卷号: 194, 期号: 1, 页码: 25-30 作者:  Lu, LW;  Zhang, YH;  Yang, GW;  Wang, J;  Ge, WK 收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12 Ingaas/gaas quantum wells  Dlts measurements  Nonradiative centers   Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth 期刊论文  OAI收割 journal of crystal growth, 1998, 卷号: 194, 期号: 1, 页码: 25-30 Lu LW; Zhang YH; Yang GW; Wang J; Ge WK 收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12 InGaAs/GaAs quantum wells  DLTS measurements  nonradiative centers  THICKNESS   Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots 期刊论文  OAI收割 superlattices and microstructures, 1998, 卷号: 23, 期号: 2, 页码: 381-387 Xu ZY; Lu ZD; Yuan ZL; Yang XP; Zheng BZ; Xu JZ; Ge WK; Wang Y; Wang J; Chang LL 收藏  |  浏览/下载：40/0  |  提交时间：2010/08/12 InAs/GaAs  quantum dots  INGAAS/GAAS  RELAXATION  GROWTH  WELLS  PHOTOLUMINESCENCE