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Growth and in situ high-pressure reflection high energy electron diffraction monitoring of oxide thin films 期刊论文  OAI收割
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2013, 卷号: 56, 期号: 12, 页码: 2312
Li, J; Peng, W; Chen, K; Wang, P; Chu, HF; Chen, YF; Zheng, DN
收藏  |  浏览/下载：26/0  |  提交时间：2014/01/16
Tailoring of polar and nonpolar ZnO planes on MgO (001) substrates through molecular beam epitaxy 期刊论文  OAI收割
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 1-7
作者:  Zhou, H;  Wang, HQ;  Liao, XX;  Zhang, YF;  Zheng, JC
收藏  |  浏览/下载：26/0  |  提交时间：2016/04/08
ZnO  MgO  polar  nonpolar  RHEED  XRD  XAS  
Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia 期刊论文  OAI收割
chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4097-4100
Lin, GQ; Zeng, YP; Wang, XL; Liu, HX
收藏  |  浏览/下载：32/0  |  提交时间：2010/03/08
Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文  OAI收割
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载：35/0  |  提交时间：2013/03/25
High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that  below 500 C  ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra  ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature  which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown  which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.  
Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文  OAI收割
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W.
收藏  |  浏览/下载：27/0  |  提交时间：2013/03/25
In this paper  Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT)  Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers  respectively. In PL spectra  two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature  and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases  the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm  only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.  
Growth BaTiO3 film using laser-MBE and in-situ measurement with photoemission 期刊论文  OAI收割
HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2005, 卷号: 29, 页码: #REF!
作者:  Hong CH(洪才浩);  Wang JO(王嘉鸥);  Qian HJ(钱海杰);  Kui RX(奎热西);  Dong YH(董宇辉)
收藏  |  浏览/下载：19/0  |  提交时间：2016/04/11
X-ray double-crystal characterization of the strain relaxation in gaas/ganxas1-x/gaas(001) sandwiched structures 期刊论文  iSwitch采集
Journal of crystal growth, 2000, 卷号: 217, 期号: 1-2, 页码: 26-32
作者:  Pan, Z;  Wang, YT;  Li, LH;  Zhang, W;  Lin, YW
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12
Effect of low-temperature sige interlayer on the growth of relaxed sige 期刊论文  iSwitch采集
Journal of crystal growth, 2000, 卷号: 213, 期号: 3-4, 页码: 308-311
作者:  Li, DZ
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12
Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic gan films on gaas(001) substrates 期刊论文  iSwitch采集
Journal of crystal growth, 2000, 卷号: 212, 期号: 3-4, 页码: 397-401
作者:  Sun, XL;  Yang, H;  Wang, YT;  Zheng, LX;  Xu, DP
收藏  |  浏览/下载：30/0  |  提交时间：2019/05/12
Growth and characterization of strained superlattices delta-ganxas1-x/gaas by molecular beam epitaxy 期刊论文  iSwitch采集
Journal of crystal growth, 2000, 卷号: 209, 期号: 4, 页码: 648-652
作者:  Pan, Z;  Li, LH;  Lin, YW;  Zhou, ZQ;  Zhang, W
收藏  |  浏览/下载：41/0  |  提交时间：2019/05/12