机构

• 半导体研究所 [4]
• 上海微系统与信息技术... [3]
• 物理研究所 [1]

采集方式

• OAI收割 [7]
• iSwitch采集 [1]

内容类型

• 期刊论文 [8]

发表日期

• 2001 [2]
• 2000 [3]
• 1999 [1]
• 1992 [2]

学科主题

• Physics, A... [3]
• 半导体材料 [2]
• 光电子学 [1]

筛选

浏览/检索结果: 共8条，第1-8条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Effect of as interstitial diffusionon on the properties of undoped semi-insulating lecgaas 期刊论文  iSwitch采集 Rare metals, 2001, 卷号: 20, 期号: 3, 页码: 187-191 作者:  Yang, RX;  Zhang, FQ;  Chen, NF 收藏  |   Effect of as interstitial diffusionon on the properties of undoped semi-insulating LECGaAs 期刊论文  OAI收割 rare metals, 2001, 卷号: 20, 期号: 3, 页码: 187-191 Yang RX; Zhang FQ; Chen NF 收藏  |   Observation of EL2 and additional deep levels at low temperature in an AlGaAs/GaAs multiple-quantum-well structure 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2000, 卷号: 77, 期号: 5, 页码: 702 Zhang, YF; Zhuo, Q; Zhang, MH; Huang, Q; Zhou, JM 收藏  |   Hysteresis with nonequilibrium characteristics in sidegating effect of GaAs devices 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 87, 期号: 3, 页码: 1482-1484 Zhao, FC; Ding, Y; Xia, GQ; Tan, HZ 收藏  |   Point defects in III-V compound semiconductors 期刊论文  OAI收割 defects and diffusion in semiconductors, 2000, 卷号: 183-1, 期号: 0, 页码: 85-93 Chen N 收藏  |   Improved analytical model for threshold behavior of sidegating effect in GaAs metal-semiconductor field-effect transistors induced by impact ionization of deep traps 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 1999, 卷号: 85, 期号: 1, 页码: 604-607 Zhao, FC; Xia, GQ; Du, LX; Tan, HZ 收藏  |   PHOTOBEHAVIOR OF PARAMAGNETIC ANION ANTISITES IN PLASTICALLY DEFORMED GAAS 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 1992, 卷号: 72, 期号: 4, 页码: 1323-1326 BENCHIGUER, T; MARI, B; SCHWAB, C; WU, J; WANG, GY 收藏  |   INVESTIGATION OF NEGATIVE TRANSIENT CURRENT OF ARGON-IMPLANTED GAAS USING PHOTOINDUCED TRANSIENT-CURRENT SPECTROSCOPY 期刊论文  OAI收割 semiconductor science and technology, 1992, 卷号: 7, 期号: 5, 页码: 668-675 LO VC; CHAN PW; XU SD; WONG SP 收藏  |