中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [8]
采集方式
OAI收割 [8]
内容类型
会议论文 [4]
期刊论文 [4]
发表日期
2002 [1]
2000 [3]
1999 [4]
学科主题
半导体材料 [8]
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Space-grown SI-GaAs and its application
会议论文
OAI收割
12th international semicoducting and insulating materials conference (simc-xii2002), smolenice, slovakia, jun 30-jul 05, 2002
Chen NF
;
Zhong XG
;
Zhang M
;
Lin LY
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2010/10/29
SEMIINSULATING GALLIUM-ARSENIDE
FLOATING-ZONE GROWTH
CRYSTAL-GROWTH
ZERO GRAVITY
MICROGRAVITY
SEGREGATION
STOICHIOMETRY
SILICON
DEFECTS
INSB
Semi-insulating GaAs grown in outer space
期刊论文
OAI收割
materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 75, 期号: 2-3, 页码: 134-138
Chen NF
;
Zhong XR
;
Lin LY
;
Xie X
;
Zhang M
收藏
  |  
浏览/下载:67/0
  |  
提交时间:2010/08/12
GaAs
outer space
microgravity
integrated circuit
SEMIINSULATING GALLIUM-ARSENIDE
LEC-GAAS
DEFECTS
STOICHIOMETRY
SEGREGATION
CARBON
BORON
Point defects in III-V compound semiconductors
期刊论文
OAI收割
defects and diffusion in semiconductors, 2000, 卷号: 183-1, 期号: 0, 页码: 85-93
Chen N
收藏
  |  
浏览/下载:53/0
  |  
提交时间:2010/08/12
compound semiconductors
point defects
deep level centres
stoichiometry
MOLECULAR-BEAM EPITAXY
GAAS SINGLE-CRYSTALS
SEMIINSULATING GALLIUM-ARSENIDE
SEMI-INSULATING GAAS
ELECTRICAL-PROPERTIES
LATTICE-PARAMETER
NATIVE DEFECTS
CARBON
DIFFRACTOMETER
STOICHIOMETRY
Semi-insulating GaAs grown in outer space
会议论文
OAI收割
iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999
Chen NF
;
Zhong XR
;
Lin LY
;
Xie X
;
Zhang M
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2010/11/15
GaAs
outer space
microgravity
integrated circuit
SEMIINSULATING GALLIUM-ARSENIDE
LEC-GAAS
DEFECTS
STOICHIOMETRY
SEGREGATION
CARBON
BORON
Outer space grown semi-insulating GaAs and its applications
期刊论文
OAI收割
science in china series e-technological sciences, 1999, 卷号: 42, 期号: 5, 页码: 456-461
Lin LY
;
Zhang MA
;
Zhong XG
;
Yamada M
;
Chen NF
收藏
  |  
浏览/下载:63/0
  |  
提交时间:2010/08/12
GaAs
outer-space
microgravity
integrated-circuit
DEFECTS
STOICHIOMETRY
SEMIINSULATING GALLIUM-ARSENIDE
Structural properties of SI-GaAs grown in space
期刊论文
OAI收割
gravitational effects in materials and fluid sciences, 1999, 卷号: 24, 期号: 10, 页码: 1211-1214
Chen NF
;
Wang YT
;
Zhong XR
;
Lin LY
收藏
  |  
浏览/下载:63/0
  |  
提交时间:2010/08/12
SEMIINSULATING GALLIUM-ARSENIDE
MICROGRAVITY
STOICHIOMETRY
Structural properties of SI-GaAs grown in space
会议论文
OAI收割
g0 1 symposium of cospar scientific commission g held at the 32nd cospar scientific assembly, nagoya, japan, jul 12-19, 1998
Chen NF
;
Wang YT
;
Zhong XR
;
Lin LY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
SEMIINSULATING GALLIUM-ARSENIDE
MICROGRAVITY
STOICHIOMETRY
Stoichiometry in GaAs grown in outer space measured nondestructively
会议论文
OAI收割
9th international symposium on nondestructive characterization of materials, sydney, australia, jun 28-jul 02, 1999
Chen NF
;
Zhong XG
;
Lin LY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/10/29
SEMIINSULATING GALLIUM-ARSENIDE
CRYSTALS
DEFECTS