中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
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上海微系统与信息技术... [6]
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OAI收割 [6]
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期刊论文 [6]
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Strain Stability and Carrier Mobility Enhancement in Strained Si on Relaxed SiGe-on-Insulator
期刊论文
OAI收割
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 卷号: 157, 期号: 1, 页码: H104-H108
Ma, XB
;
Liu, WL
;
Liu, XY
;
Du, XF
;
Song, ZT
;
Lin, CL
;
Chu, PK
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Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation
期刊论文
OAI收割
APPLIED SURFACE SCIENCE, 2007, 卷号: 253, 期号: 10, 页码: 4472-4476
Cheng, XL
;
Liu, H
;
Zhang, F
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Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation
期刊论文
OAI收割
CHINESE PHYSICS, 2006, 卷号: 15, 期号: 4, 页码: 792-797
Zhang, EX
;
Qian, C
;
Zhang, ZX
;
Lin, CL
;
Wang, X
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Hydrogen effects on fabrication of SGOI by oxidation of SiGe layers on SOI wafers
期刊论文
OAI收割
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 卷号: 20, 期号: 3, 页码: L1-L4
Cheng,XL
;
Lin,ZL
;
Wang,YJ
;
Xiao,HB
;
Zhang,F
;
Zou,SC
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Ge condensation characterization of SiGe-On-Insulator structure fabricated by separation of oxygen implantation
期刊论文
OAI收割
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, 期号: 0, 页码: 2187-2189
Chen,ZJ
;
Zhang,F
;
Zhang,ZX
;
Bo,J
;
Wang,X
;
Zou,SC
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  |  
Formation of silicon on insulator using separation by implantation of oxygen with water plasma
期刊论文
OAI收割
APPLIED PHYSICS LETTERS, 2001, 卷号: 78, 期号: 1, 页码: 73-75
Chen, J
;
Wang, X
;
Chen, M
;
Zheng, ZH
;
Yu, YH
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