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• 上海微系统与信息技术... [6]

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• OAI收割 [6]

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• 期刊论文 [6]

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浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Strain Stability and Carrier Mobility Enhancement in Strained Si on Relaxed SiGe-on-Insulator 期刊论文  OAI收割 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 卷号: 157, 期号: 1, 页码: H104-H108 Ma, XB; Liu, WL; Liu, XY; Du, XF; Song, ZT; Lin, CL; Chu, PK 收藏  |  浏览/下载：22/0  |  提交时间：2012/03/24 N-MOSFETS  SILICON  FABRICATION  TECHNOLOGY  LAYERS  RELAXATION  ELECTRON  SIMOX  SOI   Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2007, 卷号: 253, 期号: 10, 页码: 4472-4476 Cheng, XL; Liu, H; Zhang, F 收藏  |  浏览/下载：26/0  |  提交时间：2012/03/24 HETEROJUNCTION BIPOLAR-TRANSISTORS  SIMOX TECHNOLOGY  SUBSTRATE  ULTRATHIN  MOSFETS  GROWTH  LAYER   Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation 期刊论文  OAI收割 CHINESE PHYSICS, 2006, 卷号: 15, 期号: 4, 页码: 792-797 Zhang, EX; Qian, C; Zhang, ZX; Lin, CL; Wang, X 收藏  |  浏览/下载：29/0  |  提交时间：2012/03/24 IMPLANTING NITROGEN  RADIATION RESPONSE  THERMAL OXIDES  SIMOX  CHARGE  ELECTRON  OXYGEN  HOLE  TRANSISTORS  TECHNOLOGY   Hydrogen effects on fabrication of SGOI by oxidation of SiGe layers on SOI wafers 期刊论文  OAI收割 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 卷号: 20, 期号: 3, 页码: L1-L4 Cheng,XL; Lin,ZL; Wang,YJ; Xiao,HB; Zhang,F; Zou,SC 收藏  |  浏览/下载：14/0  |  提交时间：2012/03/24 SIMOX TECHNOLOGY  SILICON  MOSFETS  OXYGEN   Ge condensation characterization of SiGe-On-Insulator structure fabricated by separation of oxygen implantation 期刊论文  OAI收割 2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, 期号: 0, 页码: 2187-2189 Chen,ZJ; Zhang,F; Zhang,ZX; Bo,J; Wang,X; Zou,SC 收藏  |  浏览/下载：14/0  |  提交时间：2012/03/24 STRAINED-SI  MOBILITY ENHANCEMENT  SIMOX TECHNOLOGY  ELECTRON  SILICON  MOSFETS  LAYER   Formation of silicon on insulator using separation by implantation of oxygen with water plasma 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2001, 卷号: 78, 期号: 1, 页码: 73-75 Chen, J; Wang, X; Chen, M; Zheng, ZH; Yu, YH 收藏  |  浏览/下载：23/0  |  提交时间：2012/03/24 BURIED OXIDE  SIMOX  TECHNOLOGY