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Chinese Academy of Sciences Institutional Repositories Grid
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348.9 nm Intra-Cavity Frequency-Doubling Ultraviolet Laser in Blue Laser Diode Pumped Pr:YLF Crystal 期刊论文  OAI收割
Zhongguo Jiguang/Chinese Journal of Lasers, 2018, 卷号: 45, 期号: 12
作者:  
Niu, Na;  Qu, Dapeng;  Dou, Wei;  Ren, Guangsheng;  Zhou, Yang
  |  收藏  |  浏览/下载:18/0  |  提交时间:2019/09/17
Effects of barrier growth temperature ramp-up time on the photoluminescence of InGaN/GaN quantum wells 期刊论文  OAI收割
JOURNAL OF APPLIED PHYSICS, 2007, 卷号: 101, 期号: 3
Wang, Y; Pei, XJ; Xing, ZG; Guo, LW; Jia, HQ; Chen, H; Zhou, JM
收藏  |  浏览/下载:25/0  |  提交时间:2013/09/17
Synthesis of semiconductor nanowires by annealing 期刊论文  OAI收割
APPLIED PHYSICS LETTERS, 2004, 卷号: 85, 期号: 10, 页码: 1802
Zhi, CY; Bai, XD; Wang, EG
收藏  |  浏览/下载:29/0  |  提交时间:2013/09/24
The synthesis of highly oriented GaN nanowire arrays 期刊论文  OAI收割
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2003, 卷号: 76, 期号: 4, 页码: 609
Wang, JC; Zhan, CZ; Li, FG
收藏  |  浏览/下载:15/0  |  提交时间:2013/09/23
Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs 期刊论文  OAI收割
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 256, 期号: 1-2, 页码: 96-102
Lei, HP; Wu, HZ; Lao, YF; Qi, M; Li, AZ; Shen, WZ
收藏  |  浏览/下载:29/0  |  提交时间:2012/03/24
XPS and AES investigation of GaN films grown by MBE 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2001, 卷号: 50, 期号: 12, 页码: 2429-2433
Yuan, JS; Chen, GD; Qi, M; Li, AZ; Xu, Z
收藏  |  浏览/下载:7/0  |  提交时间:2012/03/24
Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy 期刊论文  OAI收割
THIN SOLID FILMS, 2000, 卷号: 367, 期号: 1-2, 页码: 149
Xue, QK; Xue, QZ; Kuwano, S; Sakurai, T; Ohno, T; Tsong, IST; Qiu, XG; Segawa, Y
收藏  |  浏览/下载:23/0  |  提交时间:2013/09/17