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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [11]
长春光学精密机械与物... [5]
物理研究所 [4]
金属研究所 [3]
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OAI收割 [21]
iSwitch采集 [2]
内容类型
期刊论文 [22]
会议论文 [1]
发表日期
2019 [2]
2018 [2]
2011 [3]
2010 [1]
2009 [3]
2008 [5]
更多
学科主题
半导体物理 [8]
光电子学 [1]
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浏览/检索结果:
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High Power (27 W) Semiconductor Disk Laser Based on Pre-Metalized Diamond Heat-Spreader
期刊论文
OAI收割
IEEE Photonics Journal, 2019, 卷号: 11, 期号: 2
作者:
G.-Y.Hou
;
S.-L.Shu
;
J.Feng
;
A.Popp
;
B.Schmidt
  |  
收藏
  |  
浏览/下载:63/0
  |  
提交时间:2020/08/24
Semiconductor lasers,Binary alloys,Copper alloys,Diamonds,Heat resistance,Heating equipment,Mergers and acquisitions,Metallizing
Photoelectric Properties of N Doped MgZnO Thin Films
期刊论文
OAI收割
Faguang Xuebao/Chinese Journal of Luminescence, 2019, 卷号: 40, 期号: 8, 页码: 956-960
作者:
P.-C.Zhao
;
Z.-Z.Zhang
;
B.Yao
;
B.-H.Li
;
X.-L.Li
  |  
收藏
  |  
浏览/下载:82/0
  |  
提交时间:2020/08/24
Thin films,Carrier mobility,II-VI semiconductors,Light emission,Magnesium,Molecular beam epitaxy,Molecular beams,Nitrogen,Photoelectricity,Sapphire,Semiconductor alloys,Semiconductor doping,Zinc oxide
Photoelectric Characteristics of Micro Flip-Chip AlGaInP Light Emitting Diode Array
期刊论文
OAI收割
Guangxue Xuebao/Acta Optica Sinica, 2018, 卷号: 38, 期号: 9
作者:
Ban, Zhang
;
Liang, Jingqiu
;
Lu, Jinguang
;
Li, Yang
  |  
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2019/09/17
Flip chip devices
Aluminum alloys
Copper
Diodes
Energy utilization
Gallium alloys
Heat convection
Heat resistance
III-V semiconductors
Indium alloys
Light emitting diodes
Microchannels
Numerical methods
Optical devices
Photoelectricity
Polydimethylsiloxane
Semiconductor alloys
Silicones
Temperature
Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si
期刊论文
OAI收割
ACS Photonics, 2018, 卷号: 5, 期号: 3, 页码: 699-704
作者:
Feng, Meixin
;
Li, Zengcheng
;
Wang, Jin
;
Zhou, Rui
;
Sun, Qian
  |  
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2019/09/17
Ultraviolet lasers
Aluminum alloys
Aluminum gallium nitride
Aluminum nitride
Defects
Gallium alloys
III-V semiconductors
Lasers
Lattice mismatch
Quantum well lasers
Semiconductor alloys
Semiconductor quantum wells
Stresses
Thermal expansion
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
期刊论文
OAI收割
journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004
作者:
He, Jifang
;
Shang, Xiangjun
;
Li, Mifeng
;
Zhu, Yan
  |  
收藏
  |  
浏览/下载:82/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Buffer layers
Epitaxial growth
Gallium alloys
Gallium arsenide
Germanium
Growth temperature
High resolution transmission electron microscopy
Molecular beam epitaxy
Molecular beams
Semiconducting gallium
Semiconductor device structures
Semiconductor quantum wells
Atomic Force Microscopy
Buffer Layers
Epitaxial Growth
Gallium Alloys
Gallium Arsenide
Germanium
Growth Temperature
High Resolution Transmission Electron Microscopy
Molecular Beam Epitaxy
Molecular Beams
Semiconducting Gallium
Semiconductor Device Structures
Semiconductor Quantum Wells
Fabrication of(Ga,Mn)As magnetic semiconductor quantum dots on Si substrates by droplet epitaxy
期刊论文
OAI收割
physica status solidi(c) current topics in solid state physics, Physica Status Solidi(C) Current Topics in Solid State Physics, 2011, 2011, 卷号: 8, 8, 期号: 2, 页码: 393-395, 393-395
作者:
Wang, S.L.
;
Meng, K.K.
;
Chen, L.
;
Xu, P.F.
;
Meng, H.J.
  |  
收藏
  |  
浏览/下载:79/0
  |  
提交时间:2012/06/14
Drop formation
Epitaxial growth
Ferromagnetic materials
Ferromagnetism
Gallium alloys
High resolution transmission electron microscopy
Magnetic semiconductors
Manganese
Semiconducting silicon
Semiconductor growth
Semiconductor quantum dots
Drop Formation
Epitaxial Growth
Ferromagnetic Materials
Ferromagnetism
Gallium Alloys
High Resolution Transmission Electron Microscopy
Magnetic Semiconductors
Manganese
Semiconducting Silicon
Semiconductor Growth
Semiconductor Quantum Dots
Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers
期刊论文
OAI收割
journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103002, 103002
作者:
Zhang, Yu
;
Wang, Guowei
;
Tang, Bao
;
Xu, Yingqiang
;
Xu, Yun
  |  
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2012/06/14
Buffer layers
Epitaxial growth
Gallium alloys
Indium antimonides
Molecular beam epitaxy
Molecular beams
Optical waveguides
Optimization
Semiconducting gallium arsenide
Semiconductor quantum wells
Tellurium
Tellurium compounds
Buffer Layers
Epitaxial Growth
Gallium Alloys
Indium Antimonides
Molecular Beam Epitaxy
Molecular Beams
Optical Waveguides
Optimization
Semiconducting Gallium Arsenide
Semiconductor Quantum Wells
Tellurium
Tellurium Compounds
The effect of Cu addition on the electrochemical corrosion and passivation behavior of stainless steels
期刊论文
OAI收割
Electrochimica Acta, 2010, 卷号: 55, 期号: 17, 页码: 5028-5035
E. E. Oguzie
;
J. B. Li
;
Y. Q. Liu
;
D. M. Chen
;
Y. Li
;
K. Yang
;
F. H. Wang
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/04/13
Cu addition
Corrosion
Passivity
Semiconductor properties
Mott-Schottky equation
iron-chromium-alloys
anodic-dissolution
antibacterial properties
impedance measurements
electronic-structure
acid-solutions
copper
films
passivity
chloride
Room temperature photoluminescence of tensile-strained ge/si0.13ge0.87 quantum wells grown on silicon-based germanium virtual substrate
期刊论文
iSwitch采集
Applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: 3
作者:
Chen, Yanghua
;
Li, Cheng
;
Zhou, Zhiwen
;
Lai, Hongkai
;
Chen, Songyan
收藏
  |  
浏览/下载:63/0
  |  
提交时间:2019/05/12
Chemical vapour deposition
Elemental semiconductors
Energy gap
Germanium
Ge-si alloys
Photoluminescence
Semiconductor epitaxial layers
Semiconductor quantum wells
Silicon
Tensile strength
Electron spin quantum beats and room temperature g factor in GaAsN
期刊论文
OAI收割
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 4
Zhao, HM
;
Lombez, L
;
Liu, BL
;
Sun, BQ
;
Xue, QK
;
Chen, DM
;
Marie, X
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2013/09/17
DEPENDENT RECOMBINATION
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