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浏览/检索结果: 共136条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 High-Speed Optical Mode Switch in Lithium Niobate on Insulator 期刊论文  OAI收割 ACS PHOTONICS, 2023, 页码: 7 作者:  Jiang, Yongheng;  Han, Xu;  Li, Yiyang;  Xiao, Huifu;  Huang, Haijin   |  收藏  |  浏览/下载：14/0  |  提交时间：2023/07/12 Optical mode switch  Lithium niobate on insulator (LNOI)  Silicon nitride  Mode-division-multiplexing (MDM)   Gate modulation enhanced position-sensitive detectors using graphene/silicon-on-insulator structure 期刊论文  OAI收割 CARBON, 2021, 卷号: 184, 页码: 445-451 作者:  Jiang, Hao;  Fu, Jintao;  Nie, Changbin;  Sun, Feiying;  Tang, Linlong   |  收藏  |  浏览/下载：60/0  |  提交时间：2021/11/26 Graphene  Silicon-on-insulator  Position-sensitive detector  Gate manipulation   Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429 作者:  Zheng, QW (Zheng, Qiwen) 1;  Cui, JW (Cui, Jiangwei) 1;  Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1   |  收藏  |  浏览/下载：41/0  |  提交时间：2021/08/06 Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability   Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523 作者:  Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1;  He, CF (He, Chengfa) 1;  Guo, Q (Guo, Qi) 1   |  收藏  |  浏览/下载：40/0  |  提交时间：2021/12/06 Threshold voltage  TestingMOSFET circuits  Transistors  Standards  Logic gates  Fluctuations  Buried oxide (BOX)  silicon-on-insulator (SOI)  total ionizing dose (TID)   Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect 期刊论文  OAI收割 NANOPHOTONICS, 2020, 卷号: 9, 期号: 11, 页码: 3663-3672 作者:  Jiang, Hao;  Nie, Changbin;  Fu, Jintao;  Tang, Linlong;  Shen, Jun   |  收藏  |  浏览/下载：21/0  |  提交时间：2020/10/12 graphene  manipulation  photodetector  photogating effect  silicon-on-insulator   Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-nm UTBB FD-SOI Technology 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 1, 页码: 374-381 作者:     |  收藏  |  浏览/下载：32/0  |  提交时间：2022/01/19 D filp-flops (DFFs)  heavy ions  radiation hardening  single-event upsets (SEUs)  ultrathin body and buried oxide fully depleted silicon on insulator (UTBB FDSOI)   Lattice Defects and Exfoliation Efficiency of 6H-SiC via H-2(+) Implantation at Elevated Temperature 期刊论文  OAI收割 MATERIALS, 2020, 卷号: 13, 期号: 24 作者:  Wang, Tao;  Yang, Zhen;  Li, Bingsheng;  Xu, Shuai;  Liao, Qing   |  收藏  |  浏览/下载：8/0  |  提交时间：2021/12/01 SILICON-CARBIDE  ON-INSULATOR  HYDROGEN IMPLANTATION  SURFACE EXFOLIATION  BUBBLE FORMATION  ION-CUT  IRRADIATION  HELIUM  WAFERS  H+   Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709 作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ]   |  收藏  |  浏览/下载：116/0  |  提交时间：2019/05/14 Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)   Chip-Integrated Geometric Metasurface As a Novel Platform for Directional Coupling and Polarization Sorting by Spin-Orbit Interaction 期刊论文  OAI收割 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2018, 卷号: 24, 期号: 6, 页码: 4700107 作者:  Guo, Yinghui;  Pu, Mingbo;  Li, Xiong;  Ma, Xiaoliang;  Song, Shichao   |  收藏  |  浏览/下载：50/0  |  提交时间：2019/08/23 Directional coupling  geometric phase  gradient phase  integrated optical waveguide  metasurfaces  optical nanoantennas  silicon-on-insulator  spin-orbit interaction  subwavelength structures  surface plasmonics   The Impacts of Heavy Ion Energy on Single Event Upsets in SOI SRAMs 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 页码: 1091-1100 作者:  Gu, Song;  Liu, Jie;  Bi, Jinshun   |  收藏  |  浏览/下载：36/0  |  提交时间：2018/07/16 Energy dependence  heavy ions  nuclear reactions  silicon-on-insulator (SOI) technology  single event upset (SEU)