机构

• 近代物理研究所 [3]
• 长春光学精密机械与物... [1]
• 新疆理化技术研究所 [1]
• 高能物理研究所 [1]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [4]
• 会议论文 [2]

发表日期

• 2022 [1]
• 2021 [1]
• 2018 [3]
• 2011 [1]

学科主题

筛选

浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs 期刊论文  OAI收割 CHINESE PHYSICS B, 2022, 卷号: 31, 期号: 12, 页码: 126103 作者:  Yang, SH;  Zhang, ZG;  Lei, ZF;  Huang, Y;  Xi, K   |  收藏  |  浏览/下载：19/0  |  提交时间：2023/11/09 neutron  fin field-effect transistor (FinFET)  single event upset (SEU)  Monte-Carlo simulation   Verification of SEU resistance in 65 nm high-performance SRAM with dual DICE interleaving and EDAC mitigation strategies 期刊论文  OAI收割 NUCLEAR SCIENCE AND TECHNIQUES, 2021, 卷号: 32, 期号: 12, 页码: 13 作者:  He, Ze;  Zhao, Shi-Wei;  Liu, Tian-Qi;  Cai, Chang;  Yan, Xiao-Yu   |  收藏  |  浏览/下载：77/0  |  提交时间：2022/01/12 Double interlocked storage cell (DICE)  Error detection and correction (EDAC) code  Heavy ion  Radiation hardening technology  Single event upset (SEU)  Static random-access memory (SRAM)   The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 会议论文  OAI收割 Geneva, SWITZERLAND, OCT 02-06, 2017 作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie   |  收藏  |  浏览/下载：51/0  |  提交时间：2018/10/08 Charge sharing  single-event upset (SEU)  static random access memory  total ionizing dose (TID)   The Impacts of Heavy Ion Energy on Single Event Upsets in SOI SRAMs 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 页码: 1091-1100 作者:  Gu, Song;  Liu, Jie;  Bi, Jinshun;  Zhao, Fazhan;  Zhang, Zhangang   |  收藏  |  浏览/下载：37/0  |  提交时间：2018/07/16 Energy dependence  heavy ions  nuclear reactions  silicon-on-insulator (SOI) technology  single event upset (SEU)   The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927 作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ]   |  收藏  |  浏览/下载：61/0  |  提交时间：2018/09/27 Charge Sharing  Single-event Upset (Seu)  Static Random Access Memory  Total Ionizing Dose (Tid)   Communication software reliability design of satelliteborne (EI CONFERENCE) 会议论文  OAI收割 2011 International Conference on Electric and Electronics, EEIC 2011, June 20, 2011 - June 22, 2011, Nanchang, China 作者:   收藏  |  浏览/下载：8/0  |  提交时间：2013/03/25 Firstly  the failure model of Satelliteborne communication software is given for space environment  especially SEU(Single Event Upset)  unlike common communication software  then the design flow for satelliteborne software is set  and some measures are taken such as register renewed periodically  memory voting and redundancy design. Finally fault injection is applied to validate. Practical results show that the design is necessary and effective. 2011 Springer-Verlag Berlin Heidelberg.