机构

• 近代物理研究所 [19]
• 新疆理化技术研究所 [17]
• 国家空间科学中心 [6]
• 自动化研究所 [3]
• 计算技术研究所 [1]
• 微电子研究所 [1]
• 更多

采集方式

• OAI收割 [49]

内容类型

• 期刊论文 [37]
• 会议论文 [8]
• 学位论文 [3]
• 外文期刊 [1]

发表日期

• 2021 [2]
• 2020 [1]
• 2019 [3]
• 2018 [4]
• 2017 [6]
• 2016 [3]
• 更多

学科主题

• Physics [4]
• 空间环境 [2]
• Engineerin... [1]
• Engineerin... [1]

筛选

浏览/检索结果: 共49条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Verification of SEU resistance in 65 nm high-performance SRAM with dual DICE interleaving and EDAC mitigation strategies 期刊论文  OAI收割 NUCLEAR SCIENCE AND TECHNIQUES, 2021, 卷号: 32, 期号: 12, 页码: 13 作者:  He, Ze;  Zhao, Shi-Wei;  Liu, Tian-Qi;  Cai, Chang;  Yan, Xiao-Yu   |  收藏  |  浏览/下载：63/0  |  提交时间：2022/01/12 Double interlocked storage cell (DICE)  Error detection and correction (EDAC) code  Heavy ion  Radiation hardening technology  Single event upset (SEU)  Static random-access memory (SRAM)   Design and verification of multiple SEU mitigated circuits on SRAM-based FPGA system 期刊论文  OAI收割 MICROELECTRONICS RELIABILITY, 2021, 卷号: 126, 页码: 7 作者:  Yu, Jian;  Cai, Chang;  Ning, Bingxu;  Gao, Shuai;  Liu, Tianqi   |  收藏  |  浏览/下载：36/0  |  提交时间：2022/01/24 Heavy ions  Irradiation  Hardened  Single event upset   Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories 期刊论文  OAI收割 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2020, 卷号: 67, 期号: 12, 页码: 4660-4669 作者:  Wu, Bi;  Wang, Chao;  Wang, Zhaohao;  Wang, Ying;  Zhang, Deming   |  收藏  |  浏览/下载：20/0  |  提交时间：2021/12/01 Random access memory  Magnetic tunneling  Switches  Reliability  Tunneling magnetoresistance  Metals  Transistors  SOT-MRAM  low power  high speed  high reliability   SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA 期刊论文  OAI收割 ELECTRONICS, 2019, 卷号: 8, 期号: 12, 页码: 12 作者:  Cai, Chang;  Gao, Shuai;  Zhao, Peixiong;  Yu, Jian;  Zhao, Kai   |  收藏  |  浏览/下载：21/0  |  提交时间：2022/01/19 field-programmable gate arrays  embedded block memory  single event  fault tolerance  radiation effect   Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898 作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie   |  收藏  |  浏览/下载：74/0  |  提交时间：2019/11/10 Single-event multiple-cell upsets (MCUs)  static random access memory  total ionizing dose (TID)   Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs 期刊论文  OAI收割 ELECTRONICS, 2019, 卷号: 8, 期号: 3, 页码: 13 作者:  Ke, Lingyun;  Zhao, Peixiong;  Liu, Jie;  Fan, Xue;  Cai, Chang   |  收藏  |  浏览/下载：108/0  |  提交时间：2019/11/10 FPGA  radiation hardening  single event upsets  heavy ions  error rates   The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 会议论文  OAI收割 Geneva, SWITZERLAND, OCT 02-06, 2017 作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie   |  收藏  |  浏览/下载：38/0  |  提交时间：2018/10/08 Charge sharing  single-event upset (SEU)  static random access memory  total ionizing dose (TID)   Advanced Extensible Crossbar Protocol for Connecting Multi-Cores and Shared-Memory on Chip 会议论文  OAI收割 Beijing,China, 2018,6.15-17 作者:  Hongyu,Meng;  Donglin,Wang;  Zijun,Liu;  Yang,Guo   |  收藏  |  浏览/下载：25/0  |  提交时间：2019/05/06 Interconnect  Crossbar  Multi-cores  Shared-memory   Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697 作者:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa)   |  收藏  |  浏览/下载：48/0  |  提交时间：2018/05/15 Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)   The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927 作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ]   |  收藏  |  浏览/下载：52/0  |  提交时间：2018/09/27 Charge Sharing  Single-event Upset (Seu)  Static Random Access Memory  Total Ionizing Dose (Tid)