中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [6]
长春光学精密机械与物... [3]
上海微系统与信息技术... [2]
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会议论文 [6]
期刊论文 [6]
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2012 [1]
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2001 [1]
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光电子学 [2]
半导体物理 [2]
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Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI
期刊论文
OAI收割
IEEE ELECTRON DEVICE LETTERS, 2012, 卷号: 33, 期号: 6, 页码: 758-760
Yu, W
;
Zhang, B
;
Zhao, QT
;
Buca, D
;
Hartmann, JM
;
Luptak, R
;
Mussler, G
;
Fox, A
;
Bourdelle, KK
;
Wang, X
;
Mantl, S
收藏
  |  
Numerical study of strained ingaas quantum well lasers emitting at 2.33 mu m using the eight-band model
期刊论文
iSwitch采集
Chinese physics b, 2011, 卷号: 20, 期号: 7, 页码: 7
作者:
Wang Ming
;
Gu Yong-Xian
;
Ji Hai-Ming
;
Yang Tao
;
Wang Zhan-Guo
收藏
  |  
High power 1064nm laser diode array and measuring chip temperature based on emitting spectra (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者:
Wang X.
;
Wang L.
;
Wang L.
;
Wang L.
;
Wang Y.
收藏
  |  
Material growth and device fabrication of highly strained ingaas/ingaasp long wavelength distributed feedback lasers
期刊论文
iSwitch采集
Acta physica sinica, 2006, 卷号: 55, 期号: 10, 页码: 5216-5220
作者:
Pan Jiao-Qing
;
Zhao Qian
;
Zhu Hong-Liang
;
Zhao Ling-Juan
;
Ding Ying
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  |  
Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers
期刊论文
OAI收割
acta physica sinica, 2006, 卷号: 55, 期号: 10, 页码: 5216-5220
Pan JQ (Pan Jiao-Qing)
;
Zhao Q (Zhao Qian)
;
Zhu HL (Zhu Hong-Liang)
;
Zhao LJ (Zhao Ling-Juan)
;
Ding Y (Ding Ying)
;
Wang BJ (Wang Bao-Jun)
;
Zhou F (Zhou Fan)
;
Wang LF (Wang Lu-Feng)
;
Wang W (Wang Wei)
收藏
  |  
High power output and temperature characteristics of 1.06m diode array module (EI CONFERENCE)
会议论文
OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:
Yao S.
;
Wang L.
;
Wang L.
;
Wang L.
;
Liu Y.
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  |  
Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE)
会议论文
OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:
Wang L.-J.
;
Wang L.-J.
;
Ning Y.-Q.
;
Qin L.
收藏
  |  
Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers
会议论文
OAI收割
asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001
作者:
Yu LJ
收藏
  |  
High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method
会议论文
OAI收割
semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998
Ma XY
;
Cao Q
;
Wang ST
;
Guo L
;
Wang ZM
;
Wang LM
;
He GP
;
Yang YL
;
Zhang HQ
;
Zhou XN
;
Chen LH
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  |  
Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs
会议论文
OAI收割
semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998
Yang GW
;
Xu ZT
;
Xu JY
;
Ma XY
;
Zhang JM
;
Chen LH
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  |