机构

• 金属研究所 [7]
• 半导体研究所 [3]
• 过程工程研究所 [2]
• 物理研究所 [1]
• 上海应用物理研究所 [1]

采集方式

• OAI收割 [14]

内容类型

• 期刊论文 [13]
• 会议论文 [1]

发表日期

• 2022 [1]
• 2019 [1]
• 2014 [1]
• 2012 [1]
• 2000 [2]
• 1995 [1]
• 更多

学科主题

• 半导体物理 [3]
• Aluminum O... [1]
• Metals [1]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Low-Temperature As-Doped In2O3Nanowires for Room Temperature NO2Gas Sensing 期刊论文  OAI收割 ACS Applied Nano Materials, 2022, 卷号: 5, 期号: 6, 页码: 7983-7992 作者:  Wang, Hang;  Fan, Guijun;  Yang, Zaixing;  Han, Ning;  Chen, Yunfa   |  收藏  |  浏览/下载：0/0  |  提交时间：2023/06/26 Catalysts - Chemical sensors - Chemical vapor deposition - CMOS integrated circuits - Copper oxides - Crystalline materials - Gas detectors - Gas sensing electrodes - III-V semiconductors - Indium arsenide - MOS devices - Oxide semiconductors - Temperature   Semiconducting 2D Triazine-Cored Covalent Organic Frameworks with Unsubstituted Olefin Linkages 期刊论文  OAI收割 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2019, 卷号: 141, 期号: 36, 页码: 14272-14279 作者:  Wei, SC;  Zhang, F;  Zhang, WB;  Qiang, PR;  Yu, KJ   |  收藏  |  浏览/下载：36/0  |  提交时间：2020/10/16 CARBON NITRIDE SEMICONDUCTORS  ROOM-TEMPERATURE  H-2 EVOLUTION  CRYSTALLINE  PHOTOELECTRODE  POLYMERS  FILMS   First-principles calculation of crystalline materials genome: a preliminary study 期刊论文  OAI收割 Chinese Science Bulletin, 2014, 卷号: 59, 期号: 15, 页码: 1624-1634 S. Q. Wang; H. Q. Ye 收藏  |  浏览/下载：52/0  |  提交时间：2014/07/03 Materials genome  First-principles calculation  Crystalline material  Physical property  Density-functional theory  density-functional theory  iii-v compounds  lonsdaleite phases  elastic  properties  lattice-dynamics  semiconductors  pressure  principles  stability  solids   Ge-70 nanocrystals in SiO2 films under neutron irradiation: A Raman and photoluminescence study 期刊论文  OAI收割 Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 2012, 卷号: 286, 页码: 287-290 L. Fan; T. Lu; Q. Chen; Y. Hu; S. Dun; Q. Hu; C. You; S. Zhang; B. Tang; J. Dai 收藏  |  浏览/下载：41/0  |  提交时间：2013/02/05 Ion-implantation  Neutron irradiation  Nanocrystalline materials  Photoluminescence  ge nanocrystals  sio2 matrix  semiconductors  crystalline  mechanism  spectra   Photoluminescence and microstructure of the Erbium-Doped hydrogenated amorphous SiOx(0 < x < 2) 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2000, 卷号: 17, 期号: 11, 页码: 838 Liang, JJ; Chen, WD; Wang, YQ; He, J; Zheng, WM; Wang, ZG 收藏  |  浏览/下载：28/0  |  提交时间：2013/09/24 CRYSTALLINE SILICON  LUMINESCENCE  ELECTROLUMINESCENCE  SEMICONDUCTORS  SI   Photoluminescence and microstructure of the Erbium-Doped hydrogenated amorphous SiOx(0 < x < 2) 期刊论文  OAI收割 chinese physics letters, 2000, 卷号: 17, 期号: 11, 页码: 838-840 Liang JJ; Chen WD; Wang YQ; He J; Zheng WM; Wang ZG 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 CRYSTALLINE SILICON  LUMINESCENCE  ELECTROLUMINESCENCE  SEMICONDUCTORS  SI   PHOTOINDUCED CHANGES OF HYDROGEN-BONDING IN SEMIINSULATING IRON-DOPED INDIUM-PHOSPHIDE 期刊论文  OAI收割 solid state communications, 1995, 卷号: 95, 期号: 12, 页码: 851-854 PAJOT B; SONG CY; DARWICH R; GENDRON F; EWELS C 收藏  |  浏览/下载：30/0  |  提交时间：2010/11/17 SEMICONDUCTORS  IMPURITIES  OPTICAL PROPERTIES  LIGHT ABSORPTION  ELECTRON-PARAMAGNETIC-RESONANCE  CRYSTALLINE SILICON  MOLECULAR-HYDROGEN  GALLIUM-ARSENIDE  INP  COMPLEXES  LEVEL   CONTROLLING THE SCHOTTKY-BARRIER HEIGHT OF TI/N-GAAS SCHOTTKY DIODE CONTAINING HYDROGEN BY BIASED ANNEALING 期刊论文  OAI收割 Science in China Series a-Mathematics Physics Astronomy, 1994, 卷号: 37, 期号: 6, 页码: 730-737 S. X. Jin; M. H. Yuan; L. P. Wang; H. Z. Song; H. P. Wang; G. G. Qin 收藏  |  浏览/下载：20/0  |  提交时间：2012/04/14 schottky barrier (sb)  metal-semiconductor (ms) interfaces  hydrogen  zero bias annealing (zba)  reverse bias annealing (rba)  unified defect model  crystalline semiconductors  states   EFFECT OF BIAS ANNEALING ON AU/N-SI SCHOTTKY-BARRIER WITH HYDROGEN INCORPORATION 期刊论文  OAI收割 Journal of Applied Physics, 1994, 卷号: 76, 期号: 9, 页码: 5592-5594 M. H. Yuan; Y. Q. Jia; G. G. Qin 收藏  |  浏览/下载：16/0  |  提交时间：2012/04/14 n-type gaas  crystalline semiconductors  ti/n-gaas  states  diodes   DEEP LEVELS IN GAMMA-RAY IRRADIATED N-TYPE AND P-TYPE HYDROGEN-GROWN FLOAT-ZONED SILICON 期刊论文  OAI收割 Journal of Applied Physics, 1992, 卷号: 71, 期号: 3, 页码: 1182-1188 M. H. Yuan; D. C. Peng; Q. Z. Peng; Y. H. Zhang; J. Q. Li; G. G. Qin 收藏  |  浏览/下载：28/0  |  提交时间：2012/04/14 crystalline semiconductors  defects