中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共9条，第1-9条

帮助

条数/页：排序方式：
	Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation 期刊论文 OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 695, 期号: 无, 页码: 2199-2206 作者: Gao, J.; He, G.; Fang, Z. B.; Lv, J. G.; Liu, M. 收藏 \| 浏览/下载：19/0 \| 提交时间：2018/07/04 High-k Gate Dielectrics Interface Quality Band Alignment Electrical Properties Leakage Current Mechanism
	Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics 期刊论文 OAI收割 CERAMICS INTERNATIONAL, 2017, 卷号: 43, 期号: 3, 页码: 3101-3106 作者: 收藏 \| 浏览/下载：26/0 \| 提交时间：2018/07/04 High-k Hfalox Gate Dielectrics Sol-gel Optical Properties Electrical Properties Leakage Current Transport Mechanism
	Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack 期刊论文 OAI收割 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 期号: 8, 页码: 8075-8082 作者: Gao, Juan; He, Gang; Zhang, Jiwen; Chen, Xuefei; Jin, Peng 收藏 \| 浏览/下载：29/0 \| 提交时间：2017/11/21 High-k Gate Dielectric Atomic Layer Deposition Electrical Properties Leakage Current Mechanism
	Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfO2 gate dielectrics 期刊论文 OAI收割 CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 6, 页码: 6761-6769 作者: Jin, Peng; He, Gang; Xiao, Dongqi; Gao, Juan; Liu, Mao 收藏 \| 浏览/下载：24/0 \| 提交时间：2017/10/18 High-k Gate Dielectrics Sol-gel Electrical Properties Leakage Current Transport Mechanism Optical Properties
	Enhancement-Mode InAlN/GaN MISHEMT with Low Gate Leakage Current 期刊论文 OAI收割 Journal of Semiconductors, 2012, 卷号: 33, 期号: 6 作者: Zhang BS(张宝顺); Cai Y(蔡勇); Ceng CH(曾春红) 收藏 \| 浏览/下载：32/0 \| 提交时间：2013/01/22 enhancement-mode InAlN/GaN HEMT threshold voltage thermal oxidation gate leakage
	Ni-Al-O diffusion barrier layer for high-kappa metal-oxide-semiconductor capacitor 期刊论文 OAI收割 THIN SOLID FILMS, 2011, 卷号: 519, 期号: 10, 页码: 3358-3362 作者: Wu D. Q.; Jia R.; Yao J. C.; Zhao H. S.; Chang A. M. 收藏 \| 浏览/下载：26/0 \| 提交时间：2013/11/07 High-kappa gate dielectrics Leakage current density Er(2)O(3) Ni-Al-O Diffusion barrier layer
	Leakage current mechanisms of ultrathin high-k Er2O3 gate dielectric film 期刊论文 OAI收割 Journal of Semiconductors, 2009, 卷号: 30, 期号: 10, 页码: 21-26 作者: Wu, Deqi; Yao, Jincheng; Zhao, Hongsheng; Chang, Aimin; Li, Feng 收藏 \| 浏览/下载：32/0 \| 提交时间：2014/11/11 Er_2O_3 high-kappa gate dielectrics leakage current leakage current mechanisms
	The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者: Wang C. 收藏 \| 浏览/下载：31/0 \| 提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.
	Characterization of 1.9-and 1.4-nm ultrathin gate oxynitride by oxidation of nitrogen-implanted silicon substrate 期刊论文 OAI收割 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 卷号: 51, 期号: 1, 页码: 113-120 作者: Xu, QX; Qian, H; Han, ZS; Lin, G; Liu, M \| 收藏 \| 浏览/下载：33/0 \| 提交时间：2019/04/09 Boron Penetration Micro-roughness Of Interface Oxidation Of N-implanted Silicon Substrate Oxidation Retardation Tunneling Leakage Ultrathin Gate Oxynitride