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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [6]
金属研究所 [2]
物理研究所 [1]
上海微系统与信息技术... [1]
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期刊论文 [10]
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2011 [1]
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半导体材料 [3]
半导体物理 [2]
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Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
OAI收割
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H
;
Zhou K
;
Pang JB
;
Shao YD
;
Wang Z
;
Zhao YW
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Defects in gallium nitride nanowires: First principles calculations
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 108, 108, 期号: 4, 页码: art. no. 044305, Art. No. 044305
作者:
Wang ZG (Wang Zhiguo)
;
Li JB (Li Jingbo)
;
Gao F (Gao Fei)
;
Weber WJ (Weber William J.)
;
Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. E-mail Address: zgwang@uestc.edu.cn
  |  
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First-principle study of native defects in cusco2 and cuyo2
期刊论文
iSwitch采集
Chinese physics b, 2008, 卷号: 17, 期号: 11, 页码: 4279-4284
作者:
Fang Zhi-Jie
;
Shi Li-Jie
;
Liu Yong-Hui
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  |  
First-principle study of native defects in CuScO2 and CuYO2
期刊论文
OAI收割
chinese physics b, 2008, 卷号: 17, 期号: 11, 页码: 4279-4284
Fang, ZJ
;
Shi, LJ
;
Liu, YH
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  |  
Effects of low doping concentration on interconnected microstructural ZnO : Al thin films prepared by the sol-gel technique
期刊论文
OAI收割
European Physical Journal-Applied Physics, 2006, 卷号: 35, 期号: 3, 页码: 195-200
S. W. Xue
;
X. T. Zu
;
X. Xiang
;
H. Deng
;
Z. Q. Xu
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  |  
Development of thermodynamic modeling of oxygen-doped GaN semiconductor
期刊论文
OAI收割
CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY, 2003, 卷号: 27, 期号: 1, 页码: 1
Li, JB
;
Tedenac, JC
;
Li, CR
;
Zhang, WJ
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D-A emission in photoluminescence spectrum of GaN grown by RF-plasma assisted MBE
期刊论文
OAI收割
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2000, 卷号: 4086, 页码: 282-285
Zhao, ZB
;
Li, W
;
Qi, M
;
Li, AZ
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  |  
Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy
期刊论文
OAI收割
journal of crystal growth, 2000, 卷号: 217, 期号: 3, 页码: 228-232
Xu HZ
;
Wang ZG
;
Harrison I
;
Bell A
;
Ansell BJ
;
Winser AJ
;
Cheng TS
;
Foxon CT
;
Kawabe M
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  |  
Point defects in III-V compound semiconductors
期刊论文
OAI收割
defects and diffusion in semiconductors, 2000, 卷号: 183-1, 期号: 0, 页码: 85-93
Chen N
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LOCALIZED STATES INDUCED BY SELF-INTERSTITIAL DEFECTS IN ULTRA-THIN GAP INP STRAINED-LAYER SUPERLATTICES
期刊论文
OAI收割
Physica Status Solidi B-Basic Research, 1991, 卷号: 167, 期号: 1, 页码: 189-196
E. G. Wang
;
D. S. Wang
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