机构

• 半导体研究所 [16]
• 长春光学精密机械与物... [2]

采集方式

• OAI收割 [12]
• iSwitch采集 [6]

内容类型

• 期刊论文 [18]

发表日期

• 2019 [2]
• 2011 [4]
• 2010 [6]
• 2009 [2]
• 2005 [1]
• 2000 [1]
• 更多

学科主题

• 半导体材料 [5]
• 光电子学 [3]
• 半导体器件 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共18条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Extracting more light for vertical emission: high power continuous wave operation of 1.3-m quantum-dot photonic-crystal surface-emitting laser based on a flat band 期刊论文  OAI收割 Light: Science and Applications, 2019, 卷号: 8, 期号: 1 作者:  H.-Y.Lu;  S.-C.Tian;  C.-Z.Tong   |  收藏  |  浏览/下载：31/0  |  提交时间：2020/08/24 Photonic crystals,Arsenic compounds,Crystal structure,III-V semiconductors,Indium arsenide,Nanocrystals,Quantum dot lasers,Semiconductor quantum dots,Surface emitting lasers   Static and Dynamic Characteristics of In(AsSb)/GaAs Submonolayer Lasers 期刊论文  OAI收割 Ieee Journal of Quantum Electronics, 2019, 卷号: 55, 期号: 3, 页码: 7 作者:  D.Quandt;  D.Arsenijevic;  A.Strittmatte;  D.H.Bimberg   |  收藏  |  浏览/下载：54/0  |  提交时间：2020/08/24 Submonolayer (SML),quantum dot (QD),laser diode,high-speed modulation,quantum-well lasers,dot lasers,gain,threshold,Engineering,Physics,Optics   The research progress of quantum dot lasers and photodetectors in china 期刊论文  iSwitch采集 Journal of nanoscience and nanotechnology, 2011, 卷号: 11, 期号: 11, 页码: 9345-9356 作者:  Xu, Peng-Fei;  Ji, Hai-Ming;  Yang, Tao;  Xu, Bo;  Ma, Wen-Quan 收藏  |  浏览/下载：35/0  |  提交时间：2019/05/12 Quantum dot  Lasers  Photodetectors   1.3-mu m in(ga)as quantum-dot vcsels fabricated by dielectric-free approach with surface-relief process 期刊论文  iSwitch采集 Ieee photonics technology letters, 2011, 卷号: 23, 期号: 2, 页码: 91-93 作者:  Xu, D. W.;  Yoon, S. F.;  Ding, Y.;  Tong, C. Z.;  Fan, W. J. 收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12 Dielectric-free approach  Quantum dot (qd)  Surface-relief technique  Vertical-cavity surface-emitting lasers (vcsels)   Graded index profiles and loss-induced single-mode characteristics in vertical-cavity surface-emitting lasers with petal-shape holey structure 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 2, 页码: article no.24204 作者:  Jiang B 收藏  |  浏览/下载：74/7  |  提交时间：2011/07/06 vertical-cavity surface-emitting lasers  single mode  low divergence angle  graded index profile  OPTICAL INTERCONNECTS  QUANTUM-DOT  WAVE-GUIDE  VCSELS  POWER  FIELD  OPERATION  OXIDATION  DESIGN  FIBERS   1.3-mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process 期刊论文  OAI收割 ieee photonics technology letters, 2011, 卷号: 23, 期号: 2, 页码: 91-93 Xu DW; Yoon SF; Ding Y; Tong CZ; Fan WJ; Zhao LJ 收藏  |  浏览/下载：120/2  |  提交时间：2011/07/05 Dielectric-free approach  quantum dot (QD)  surface-relief technique  vertical-cavity surface-emitting lasers (VCSELs)  EMITTING LASERS   Delay of the excited state lasing of 1310 nm inas/gaas quantum dot lasers by facet coating 期刊论文  iSwitch采集 Applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: 3 作者:  Cao, Yu-Lian;  Yang, Tao;  Xu, Peng-Fei;  Ji, Hai-Ming;  Gu, Yong-Xian 收藏  |  浏览/下载：36/0  |  提交时间：2019/05/12 Excited states  Gallium arsenide  Iii-v semiconductors  Indium compounds  Laser tuning  Optical films  Quantum dot lasers  Silicon compounds  Tantalum compounds   Self-heating effect in 1.3 mu m p-doped inas/gaas quantum dot vertical cavity surface emitting lasers 期刊论文  iSwitch采集 Journal of applied physics, 2010, 卷号: 107, 期号: 6, 页码: 6 作者:  Xu, D. W.;  Tong, C. Z.;  Yoon, S. F.;  Zhao, L. J.;  Ding, Y. 收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12 Gallium arsenide  Iii-v semiconductors  Indium compounds  Quantum dot lasers  Surface emitting lasers   Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating 期刊论文  OAI收割 applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: art. no. 171101 Cao YL (Cao Yu-Lian); Yang T (Yang Tao); Xu PF (Xu Peng-Fei); Ji HM (Ji Hai-Ming); Gu YX (Gu Yong-Xian); Wang XD (Wang Xiao-Dong); Wang Q (Wang Qing); Ma WQ (Ma Wen-Quan); Chen LH (Chen Liang-Hui) 收藏  |  浏览/下载：232/51  |  提交时间：2010/05/24 excited states  gallium arsenide  III-V semiconductors  indium compounds  laser tuning  optical films  quantum dot lasers  silicon compounds  tantalum compounds  TEMPERATURE-DEPENDENCE  THRESHOLD  PERFORMANCE  GAIN   Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 107, 期号: 6, 页码: art. no. 063107 Xu DW; Tong CZ; Yoon SF; Zhao LJ; Ding Y; Fan WJ 收藏  |  浏览/下载：138/19  |  提交时间：2010/04/28 gallium arsenide  III-V semiconductors  indium compounds  quantum dot lasers  surface emitting lasers  DEPENDENT OUTPUT CHARACTERISTICS  SEMICONDUCTOR-LASERS  1.3-MU-M  VCSELS  WELL  CONFINEMENT  POWER