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• 半导体研究所 [6]
• 长春光学精密机械与物... [3]
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• 物理研究所 [1]

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• OAI收割 [10]
• iSwitch采集 [2]

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• 会议论文 [6]
• 期刊论文 [6]

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• 2012 [1]
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学科主题

• 光电子学 [2]
• 半导体物理 [2]
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浏览/检索结果: 共12条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2012, 卷号: 33, 期号: 6, 页码: 758-760 Yu, W; Zhang, B; Zhao, QT; Buca, D; Hartmann, JM; Luptak, R; Mussler, G; Fox, A; Bourdelle, KK; Wang, X; Mantl, S 收藏  |  浏览/下载：30/0  |  提交时间：2013/04/17 Hole mobility  quantum well (QW)  SiGe  strained Si (sSi)   Numerical study of strained ingaas quantum well lasers emitting at 2.33 mu m using the eight-band model 期刊论文  iSwitch采集 Chinese physics b, 2011, 卷号: 20, 期号: 7, 页码: 7 作者:  Wang Ming;  Gu Yong-Xian;  Ji Hai-Ming;  Yang Tao;  Wang Zhan-Guo 收藏  |  浏览/下载：58/0  |  提交时间：2019/05/12 Band structure  Eight-band k.p theory  Strained quantum well  Peak emission wavelength   High power 1064nm laser diode array and measuring chip temperature based on emitting spectra (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang X.;  Wang L.;  Wang L.;  Wang L.;  Wang Y. 收藏  |  浏览/下载：21/0  |  提交时间：2013/03/25 High power laser diode array with an emission wavelength of 1064nm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. The modules CW output power can reach to 56.5W at current of 80A. Because the heat capacity of st rather shorter pulse duration and lower duty cycle  the average driving power in the laser chip is quite low  so the heating effect cemiconductor laser is very small  using pulse injection can reduce temperature rising significantly. Aould be neglected. The definite relation between lasing wavelength and chip temperature is developed. The temperature drift coefficient is 0. 45nm/K 2008 SPIE.   Material growth and device fabrication of highly strained ingaas/ingaasp long wavelength distributed feedback lasers 期刊论文  iSwitch采集 Acta physica sinica, 2006, 卷号: 55, 期号: 10, 页码: 5216-5220 作者:  Pan Jiao-Qing;  Zhao Qian;  Zhu Hong-Liang;  Zhao Ling-Juan;  Ding Ying 收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12 Mocvd  Ingaas/ingaasp  Strained quantum well  Distributed feedback laser   Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers 期刊论文  OAI收割 acta physica sinica, 2006, 卷号: 55, 期号: 10, 页码: 5216-5220 Pan JQ (Pan Jiao-Qing); Zhao Q (Zhao Qian); Zhu HL (Zhu Hong-Liang); Zhao LJ (Zhao Ling-Juan); Ding Y (Ding Ying); Wang BJ (Wang Bao-Jun); Zhou F (Zhou Fan); Wang LF (Wang Lu-Feng); Wang W (Wang Wei) 收藏  |  浏览/下载：72/0  |  提交时间：2010/04/11 MOCVD  InGaAs/InGaAsP  strained quantum well  distributed feedback laser  TUNABLE DIODE-LASER  QUANTUM-WELL LASER  1.74 MU-M  SPECTROMETER  METHANE  POWER   High power output and temperature characteristics of 1.06m diode array module (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Yao S.;  Wang L.;  Wang L.;  Wang L.;  Liu Y. 收藏  |  浏览/下载：61/0  |  提交时间：2013/03/25 In this paper high power diode array module with an emission wavelength of 1.06m is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. Laser bars with a fill factor of 50% arc processed and show a good temperature characteristics with a slope efficiency only decreasing from 1.08W/A to 1.06W/A when the temperature of heat sink changes from 20C to 40C. The module's CW output power can reach to 68.5W at a current of 80A when the temperature of cooling water is 20C. The central wavelength is 1059.4nm.   Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.   Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers 会议论文  OAI收割 asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001 作者:  Yu LJ 收藏  |  浏览/下载：14/0  |  提交时间：2010/10/29 semiconductor optical amplifier  strained quantum well  optical waveguide  polarization  QUANTUM-WELL LASERS   High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method 会议论文  OAI收割 semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998 Ma XY; Cao Q; Wang ST; Guo L; Wang ZM; Wang LM; He GP; Yang YL; Zhang HQ; Zhou XN; Chen LH 收藏  |  浏览/下载：21/0  |  提交时间：2010/10/29 InGaAsP  strained layer quantum well  laser diode  MOCVD   Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs 会议论文  OAI收割 semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998 Yang GW; Xu ZT; Xu JY; Ma XY; Zhang JM; Chen LH 收藏  |  浏览/下载：16/0  |  提交时间：2010/10/29 strained quantum well  semiconductor lasers