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	Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor 期刊论文 OAI收割 CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10 作者: Zhang, JX (Zhang, Jin-Xin)[ 1 ]; Guo, HX (Guo, Hong-Xia)[ 2,3 ]; Pan, XY (Pan, Xiao-Yu)[ 3 ]; Guo, Q (Guo, Qi)[ 2 ]; Zhang, FQ (Zhang, Feng-Qi)[ 3 ] \| 收藏 \| 浏览/下载：49/0 \| 提交时间：2018/11/20 Sige Hbt Synergistic Effect Single Event Effects Total Ionizing Dose
	Effects of recording time and residue on dose-response by LiMgPO4: Tb, B ceramic disc synthesized via improved sintering process 期刊论文 OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 卷号: 422, 期号: 5, 页码: 2018-12-17 作者: Kong, XR (Kong, Xirui); Fu, ZL (Fu, Zhilong); Que, HY (Que, Huiying); Fan, YW (Fan, Yanwei); Chen, ZY (Chen, Zhaoyang) \| 收藏 \| 浏览/下载：53/0 \| 提交时间：2018/07/20 Limgpo4 Ceramic Disc Tb Osl b Recording Time Bleaching Time Total-ionizing Dose Effects
	Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process 期刊论文 OAI收割 ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 7 作者: Zheng, QW (Zheng Qi-Wen); Cui, JW (Cui Jiang-Wei); Wang, HN (Wang Han-Ning); Zhou, H (Zhou Hang); Yu, DZ (Yu De-Zhao) 收藏 \| 浏览/下载：28/0 \| 提交时间：2016/12/12 total ionizing dose effects deep sub-micron metal oxide semiconductor field effect transistor static random access memory
	research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory 期刊论文 OAI收割 ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 10, 页码: - 作者: Li Ming; Yu Xue-Feng; Xue Yao-Guo; Lu Jian; Cui Jiang-Wei 收藏 \| 浏览/下载：24/0 \| 提交时间：2012/11/29 partial-depletion-silicon-on insulator static random access memory total-dose effects power supply current
	Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor 期刊论文 OAI收割 ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 6 作者: Gao Bo; Yu Xue-Feng; Ren Di-Yuan; Cui Jiang-Wei; Lan Bo 收藏 \| 浏览/下载：51/0 \| 提交时间：2012/11/29 p-type metal-oxide-semiconductor field-effect transistor Co-60 gamma-ray total-dose irradiation damage effects enhanced low dose rate sensitivity
	p型金属氧化物半导体场效应晶体管低剂量率辐射损伤增强效应模型研究期刊论文 OAI收割物理学报, 2011, 卷号: 60, 期号: 6, 页码: 812-818 作者: 高博; 余学峰; 任迪远; 崔江维收藏 \| 浏览/下载：28/0 \| 提交时间：2012/11/29 p-type metal-oxide-semiconductor field-effect transistor 60Co gamma-ray total-dose irradiation damage effects enhanced low dose rate sensitivity
	Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array 期刊论文 OAI收割 ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 3 作者: Gao Bo; Yu Xue-Feng; Ren Di-Yuan; Li Yu-Dong; Cui Jiang-Wei 收藏 \| 浏览/下载：23/0 \| 提交时间：2012/11/29 (60)Co gamma total-dose irradiation damage effects SRAM-based FPGA CMOS cell
	Total ionizing dose effects and annealing behavior for domestic VDMOS devices 期刊论文 OAI收割 Journal of Semiconductors, 2010, 卷号: 31, 期号: 4 Gao; Yu; Ren; Liu; Wang; Sun; Cui; Bo1; Xuefeng1; Diyuan1; Gang3; Yiyuan1; Jing1; Jiangwei1; 2; 2; 2; 2; 2; 2; 4; 4; 4 收藏 \| 浏览/下载：19/0 \| 提交时间：2011/08/19 Drain current - Electric breakdown - Experiments - Field effect transistors - Ionizing radiation - Irradiation - Radiation effects - Threshold voltage - Annealing behavior - Annealing time - Bias conditions - Breakdown voltage - Drain bias voltage - Electrical parameter - N-channel - On-state resistance - Preirradiation - Total dose - Total dose effect - Total ionizing dose effects - VDMOS device - VDMOS devices
	新型氮氧复合埋层SOI及其抗总剂量辐照研究学位论文 OAI收割硕士: 中国科学院研究生院（上海微系统与信息技术研究所） , 2002 刘相华收藏 \| 浏览/下载：40/0 \| 提交时间：2012/03/06 SOIM SOI Total-Dose effects Computer Simulation Fractal