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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [23]
采集方式
OAI收割 [23]
内容类型
期刊论文 [20]
会议论文 [3]
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2013 [1]
2011 [1]
2010 [1]
2009 [2]
2008 [1]
2006 [1]
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学科主题
半导体物理 [23]
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First-principles study on strontium titanate for visible light photocatalysis
期刊论文
OAI收割
chemical physics letters, CHEMICAL PHYSICS LETTERS, 2013, 2013, 卷号: 555, 555, 页码: 141-144, 141-144
作者:
Liu, Hongfei
;
Dong, Huafeng
;
Meng, Xiuqing
;
Wu, Fengmin
  |  
收藏
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浏览/下载:10/0
  |  
提交时间:2013/10/08
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
OAI收割
physics letters a, PHYSICS LETTERS A, 2011, 2011, 卷号: 375, 375, 期号: 7, 页码: 1152-1155, 1152-1155
作者:
Liu CR
;
Li JB
;
Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn
  |  
收藏
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浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
First Principle Calculation
Indium Nitride
Band Gap
Defect
Initio Molecular-dynamics
Augmented-wave Method
Indium Nitride
Gap
Pseudopotentials
Semiconductors
Impurities
Absorption
Defects
Alloys
Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 107, 107, 期号: 7, 页码: art. no. 073108, Art. No. 073108
作者:
Zhu YH (Zhu Yuan-Hui)
;
Xu Q (Xu Qiang)
;
Fan WJ (Fan Wei-Jun)
;
Wang JW (Wang Jian-Wei)
;
Zhu, YH, Nanyang Technol Univ, Sch EEE, 50 Nanyang Ave, Singapore 639798, Singapore. 电子邮箱地址: ewjfan@ntu.edu.sg
  |  
收藏
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浏览/下载:67/3
  |  
提交时间:2010/05/07
ALLOYS
Alloys
Ge
GE
Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells
期刊论文
OAI收割
japanese journal of applied physics, 2009, 卷号: 48, 期号: 10, 页码: art.no.100206
Lu SL (Lu, Shulong)
;
Nosho H (Nosho, Hidetaka)
;
Tackeuchi A (Tackeuchi, Atsushi)
;
Bian LF (Bian, Lifeng)
;
Dong JR (Dong, Jianrong)
;
Niu ZC (Niu, Zhichuan)
收藏
  |  
浏览/下载:175/28
  |  
提交时间:2010/03/08
ALLOYS
Room Temperature Ferromagnetism of Mn Implanted AlInN
期刊论文
OAI收割
japanese journal of applied physics, 2009, 卷号: 48, 期号: 4, 页码: art. no. 040202
Majid A
;
Sharif R
;
Ali A
;
Zhu JJ
收藏
  |  
浏览/下载:248/25
  |  
提交时间:2010/03/08
MAGNETIC-PROPERTIES
SEMICONDUCTORS
GAN
CR
ALLOYS
GROWTH
FILMS
Elasticity, band structure, and piezoelectricity of BexZn1-xO alloys
期刊论文
OAI收割
physics letters a, 2008, 卷号: 372, 期号: 16, 页码: 2930-2933
Duan, YF
;
Shi, HL
;
Qin, LX
收藏
  |  
浏览/下载:79/0
  |  
提交时间:2010/03/08
first-principles
bowing coefficients
piezoelectricity
alloys
elasticity
semiconductor
Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors
期刊论文
OAI收割
applied physics letters, 2006, 卷号: 88, 期号: 24, 页码: art.no.242108
作者:
Zhang XW
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/04/11
MOLECULAR-BEAM EPITAXY
CHEMICAL-VAPOR-DEPOSITION
ENERGY-GAP
100 GAAS
INASSB
INAS1-XSBX
ALLOYS
INSB
TRANSPORT
LAYERS
Magnetic properties and rectifying behaviour of silicon doped with gadolinium
期刊论文
OAI收割
acta physica sinica, 2003, 卷号: 52, 期号: 6, 页码: 1469-1473
Zhou JP
;
Chen NF
;
Song SL
;
Chai CL
;
Yang SY
;
Liu ZK
;
Lin LY
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/08/12
magnetic semiconductor
magnetic p-n junction
ion beam epitaxy
gadolinium silicides
METAL-INSULATOR-TRANSITION
P-N-JUNCTION
INDUCED FERROMAGNETISM
SI/SIER INTERFACE
BEAM EPITAXY
SEMICONDUCTORS
EXCITATION
MAGNETORESISTANCE
ALLOYS
Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers
期刊论文
OAI收割
chinese physics letters, 2003, 卷号: 20, 期号: 8, 页码: 1261-1263
作者:
Xu YQ
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2010/08/12
GAINNAS
LUMINESCENCE
DIODES
ALLOYS
Optical study of localized and delocalized states in GaAsN/GaAs
会议论文
OAI收割
symposium on gan and related alloys held at the mrs fall meeting, boston, ma, dec 01-05, 2003
作者:
Tan PH
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/10/29
MOLECULAR-BEAM EPITAXY
ALLOYS
GAAS1-XNX
PHOTOLUMINESCENCE
RELAXATION