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  • 2007 [20]
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Study of nonlinear absorption in gaas/algaas multiple quantum wells using the reflection z-scan 期刊论文  iSwitch采集
Optical and quantum electronics, 2007, 卷号: 39, 期号: 14, 页码: 1207-1214
作者:  Liu, Rubin;  Shu, Yongchun;  Zhang, Guanjie;  Sun, Jiamin;  Xing, Xiaodong
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12
Pseudospin in si delta-doped inalas/ingaas/inalas single quantum well 期刊论文  iSwitch采集
Solid state communications, 2007, 卷号: 142, 期号: 7, 页码: 393-397
作者:  Zhou, W. Z.;  Huang, Z. M.;  Qiu, Z. J.;  Lin, T.;  Shang, L. Y.
收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12
Violet electroluminescence of alingan-ingan multiquantum-well light-emitting diodes: quantum-confined stark effect and heating effect 期刊论文  iSwitch采集
Ieee photonics technology letters, 2007, 卷号: 19, 期号: 9-12, 页码: 789-791
作者:  Li, Jun;  Shi, S. L.;  Wang, Y. J.;  Xu, S. J.;  Zhao, D. G.
收藏  |  浏览/下载：11/0  |  提交时间：2019/05/12
Optimization of gainnas(sb)/gaas quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy 期刊论文  iSwitch采集
Journal of crystal growth, 2007, 卷号: 301, 页码: 125-128
作者:  Ni, H. Q.;  Niu, Z. C.;  Fang, Z. D.;  Huang, S. S.;  Zhang, S. Y.
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12
Room-temperature photoluminescence of zno/mgo multiple quantum wells deposited by reactive magnetron sputtering 期刊论文  iSwitch采集
Acta physica sinica, 2007, 卷号: 56, 期号: 2, 页码: 1082-1087
作者:  Xin Ping;  Sun Cheng-Wei;  Qin Fu-Wen;  Wen Sheng-Ping;  Zhang Qing-Yu
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:  Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J.
收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.  
High power VCSEL device with periodic gain active region (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:  Zhang Y.;  Liu Y.;  Liu Y.;  Liu Y.;  Qin L.
收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25
High power vertical cavity surface emitting lasers with large aperture have been fabricated through improving passivation  lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structure  a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure  with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration was used to improve the beam quality and the heat dissipation. A maximum output power of 1.4W was demonstrated at CW operation for a 400m-diameter device. The lasing wavelength shifted to 995.5nm with a FWHM of 2nm at a current of 4.8A due to the internal heating and the absence of active water cooling. A ring-shape farfield pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16 were observed with current beyond 4.8A.  
Fano resonance in the luminescence spectra of donor bound excitons in polar semiconductors 期刊论文  OAI收割
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 3
Jin, KJ; Xu, SJ
收藏  |  浏览/下载：7/0  |  提交时间：2013/09/17
Numerical designing of semiconductor structure for optothermionic refrigeration 期刊论文  OAI收割
JOURNAL OF APPLIED PHYSICS, 2007, 卷号: 101, 期号: 1
Han, P; Jin, KJ; Zhou, YL; Lu, HB; Yang, GZ
收藏  |  浏览/下载：6/0  |  提交时间：2013/09/24
Effect of dry etching on light emission of InAsP/InP SMQWs 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 2, 页码: 1027-1031
Cao, M; Wu, HZ; Lu, C; Lao, YF; Huang, ZC; Xie, ZS; Zhang, J; Jiang, S
收藏  |  浏览/下载：10/0  |  提交时间：2012/03/24