机构

• 半导体研究所 [8]

采集方式

• OAI收割 [8]

内容类型

• 期刊论文 [7]
• 会议论文 [1]

发表日期

• 2010 [1]
• 2006 [1]
• 2000 [3]
• 1999 [1]
• 1998 [2]

学科主题

• 半导体材料 [8]

筛选

浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films 期刊论文  OAI收割 diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376 Ying J (Ying J.); Zhang XW (Zhang X. W.); Fan YM (Fan Y. M.); Tan HR (Tan H. R.); Yin ZG (Yin Z. G.) 收藏  |  浏览/下载：27/0  |  提交时间：2010/12/28 Cubic boron nitride  Doping  Ion beam assisted deposition  X-ray photoelectron spectroscopy  RAY PHOTOELECTRON-SPECTROSCOPY  VAPOR-DEPOSITION  SI  NUCLEATION  GROWTH   Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文  OAI收割 optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231 Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua) 收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11 in doping  cracks  Si(111) substrate  LT-AlGaN interlayer  metalorganic chemical vapor deposition  GaN  PHASE EPITAXY  INDIUM-SURFACTANT  OPTICAL-PROPERTIES  SI(111)  STRESS  FILMS   Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 220, 期号: 4, 页码: 461-465 Gao F; Huang DD; Li JP; Lin YX; Kong MY; Sun DZ; Li JM; Lin LY 收藏  |  浏览/下载：37/0  |  提交时间：2010/08/12 Si growth rate  P doping  PH3 flow rate  P segregation  GSMBE  CHEMICAL-VAPOR-DEPOSITION  SI1-XGEX  PHOSPHORUS  SI2H6  DISILANE  SI(100)  MBE   Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 322-326 Liu JP; Huang DD; Li JP; Lin YX; Sun DZ; Kong MY 收藏  |  浏览/下载：70/14  |  提交时间：2010/08/12 n-type doping  p-type doping  Si/SiGe  HBT  GSMBE  SI   The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 220, 期号: 4, 页码: 457-460 Gao F; Huang DD; Li JP; Lin YX; Kong MY; Li JM; Zeng YP; Lin LY 收藏  |  浏览/下载：89/0  |  提交时间：2010/08/12 GSMBE  SiGe alloy  doping  SIMS  HBT  current gain  SI   High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE) 期刊论文  OAI收割 journal of crystal growth, 1999, 卷号: 200, 期号: 3-4, 页码: 613-616 Liu JP; Huang DD; Li JP; Sun DZ; Kong MY 收藏  |  浏览/下载：27/0  |  提交时间：2010/08/12 Si low-temperature epitaxy  P doping  surface morphology  morphological evolution  DEPOSITION   The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy 期刊论文  OAI收割 journal of crystal growth, 1998, 卷号: 189, 期号: 0, 页码: 287-290 Liu XL; Wang LS; Lu DC; Wang D; Wang XH; Lin LY 收藏  |  浏览/下载：30/0  |  提交时间：2010/08/12 MOVPE  GaN  GaN Buffer  heavy Si-doping   The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy 会议论文  OAI收割 2nd international conference on nitride semiconductors (icns 97), tokushima city, japan, oct 27-31, 1997 Liu XL; Wang LS; Lu DC; Wang D; Wang XH; Lin LY 收藏  |  浏览/下载：4/0  |  提交时间：2010/11/15 MOVPE  GaN  GaN Buffer  heavy Si-doping