机构

• 半导体研究所 [98]

采集方式

• OAI收割 [98]

内容类型

• 期刊论文 [83]
• 会议论文 [15]

发表日期

• 2011 [5]
• 2010 [5]
• 2009 [3]
• 2008 [5]
• 2007 [1]
• 2006 [15]
• 更多

学科主题

• 半导体材料 [98]

筛选

浏览/检索结果: 共98条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy 期刊论文  OAI收割 materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113 Jin, L; Zhou, HY; Qu, SC; Wang, ZG 收藏  |  浏览/下载：91/0  |  提交时间：2012/02/06 Patterned substrate  Ion implantation  Ordered nanodots  Anodic aluminum oxide  QUANTUM DOTS  ISLANDS  GROWTH  SEMICONDUCTORS  NANOSTRUCTURES  COMPUTATION  INGAAS   Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文  OAI收割 journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716 作者:  Yin ZG;  Zhang XW;  Tan HR;  Fan YM;  Zhang SG 收藏  |  浏览/下载：42/3  |  提交时间：2011/07/05 HIGH-PRESSURE SYNTHESIS  VAPOR-DEPOSITION  NUCLEATION  EMISSION  DIAMOND  GROWTH   Behavioural investigation of InN nanodots by surface topographies and phase images 期刊论文  OAI收割 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 44, 页码: 445306 Deng, QW; Wang, XL; Xiao, HL; Wang, CM; Yin, HB; Chen, H; Lin, DF; Li, JM; Wang, ZG; Hou, X 收藏  |  浏览/下载：16/0  |  提交时间：2012/01/06 QUANTUM DOTS  SOLAR-CELLS  GROWTH  FILMS  GAN   Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate 期刊论文  OAI收割 chinese physics letters, 2011, 卷号: 28, 期号: 6, 页码: article no.68502 Wu M; Zeng YP; Wang JX; Hu Q 收藏  |  浏览/下载：49/2  |  提交时间：2011/07/05 LIGHT-EMITTING-DIODES  ULTRAVIOLET  GROWTH   Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文  OAI收割 nanoscale research letters, 2011, 卷号: 6, 页码: article no.50 作者:  Wei HY;  Song HP;  Zhang B 收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05 CHEMICAL-VAPOR-DEPOSITION  CORE-LEVEL PHOTOEMISSION  SB-DOPED SNO2  INN  GROWTH  GAN  NAXWO3  ALLOYS  GREEN  STATE   Formation trends of ordered self-assembled nanoislands on stepped substrates 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073512 Liang S (Liang S.); Zhu HL (Zhu H. L.); Kong DH (Kong D. H.); Wang W (Wang W.) 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/14 CHEMICAL-VAPOR-DEPOSITION  INAS QUANTUM DOTS  MOLECULAR-BEAM EPITAXY  GAAS  SURFACES  ISLANDS  GROWTH  FABRICATION  MIGRATION  ARRAYS   Blue-shift photoluminescence from porous InAlAs 期刊论文  OAI收割 semiconductor science and technology, 2010, 卷号: 25, 期号: 11, 页码: art. no. 115006 Jiang YC (Jiang Y. C.); Liu FQ (Liu F. Q.); Wang LJ (Wang L. J.); Yin W (Yin W.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：51/0  |  提交时间：2010/12/28 MACROPOROUS SILICON  PORE FORMATION  GAP  INP  AL0.48IN0.52AS  NANOSTRUCTURES  MORPHOLOGY   Preparation and Optical Performance of Freestanding GaN Thick Films 期刊论文  OAI收割 rare metal materials and engineering, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172 作者:  Wei TB;  Yang JK;  Duan RF 收藏  |  浏览/下载：58/10  |  提交时间：2011/07/05 GaN  HVPE  freestanding thick films  stress release  photoluminescence  VAPOR-PHASE EPITAXY  GROWTH  PRESSURE  HVPE   Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films 期刊论文  OAI收割 diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376 Ying J (Ying J.); Zhang XW (Zhang X. W.); Fan YM (Fan Y. M.); Tan HR (Tan H. R.); Yin ZG (Yin Z. G.) 收藏  |  浏览/下载：27/0  |  提交时间：2010/12/28 Cubic boron nitride  Doping  Ion beam assisted deposition  X-ray photoelectron spectroscopy  RAY PHOTOELECTRON-SPECTROSCOPY  VAPOR-DEPOSITION  SI  NUCLEATION  GROWTH   Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文  OAI收割 thin solid films, THIN SOLID FILMS, 2010, 2010, 卷号: 519, 519, 期号: 1, 页码: 228-230, 228-230 作者:  Hao RT (Hao Ruiting);  Deng SK (Deng Shukang);  Shen LX (Shen Lanxian);  Yang PZ (Yang Peizhi);  Tu JL (Tu Jielei)   |  收藏  |  浏览/下载：41/0  |  提交时间：2010/12/28 Gallium Arsenide  Gallium Arsenide  Gallium Antimonide  Gallium Antimonide/aluminum Antimonide  Superlattices  Molecular Beam Epitaxy  Vapor-phase Epitaxy  Surface-morphology  Growth  Superlattices  Temperature  Relaxation  Detectors  Gaas(001)  Mocvd  Films  Gallium antimonide  Gallium antimonide/Aluminum antimonide  Superlattices  Molecular Beam Epitaxy  VAPOR-PHASE EPITAXY  SURFACE-MORPHOLOGY  GROWTH  SUPERLATTICES  TEMPERATURE  RELAXATION  DETECTORS  GAAS(001)  MOCVD  FILMS