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  • 半导体材料 [17]
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浏览/检索结果: 共17条，第1-10条 帮助

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Theoretical study of polarization-doped GaN-based light-emitting diodes 期刊论文  OAI收割
applied physics letters, Applied Physics Letters, 2011, 2011, 卷号: 98, 98, 期号: 10, 页码: 101110, 101110
作者:  Zhang, L.;  Ding, K.;  Liu, N.X.;  Wei, T.B.;  Ji, X.L.
  |  收藏  |  浏览/下载：24/0  |  提交时间：2012/06/14
Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer 期刊论文  OAI收割
physica e-low-dimensional systems & nanostructures, 2009, 卷号: 41, 期号: 8, 页码: 1379-1381
作者:  Liu J;  Zhu H
收藏  |  浏览/下载：73/2  |  提交时间：2010/03/08
HEMT  2DEG  
Dislocation core effect scattering in a quasitriangle potential well 期刊论文  OAI收割
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:  Wei HY
收藏  |  浏览/下载：236/104  |  提交时间：2010/03/08
Raman scattering study on Ga1-xMnxAs prepared by Mn ions implantation, deposition and post-annealing 期刊论文  OAI收割
crystal research and technology, 2009, 卷号: 44, 期号: 2, 页码: 215-220
Islam MR; Chen NF; Yamada M
收藏  |  浏览/下载：224/44  |  提交时间：2010/03/08
The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition 期刊论文  OAI收割
journal of crystal growth, 2008, 卷号: 310, 期号: 10, 页码: 2508-2513
Zhou ZW; Li C; Lai HK; Chen SY; Yu JZ
收藏  |  浏览/下载：55/12  |  提交时间：2010/03/08
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD 期刊论文  OAI收割
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 835-839
Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Ma ZY (Ma Zhiyong); Ran JX (Ran Junxue); Wang CM (Wang Cuimei); Mao HL (Mao Hongling); Tang H (Tang Han); Li HP (Li Hanping); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Jinmin LM (Li Jinmin); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29
2DEG  
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate 期刊论文  OAI收割
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 791-793
Wang XL (Wang Xiaoliang); Wang CM (Wang Cuimei); Hu GX (Hu Guoxin); Mao HL (Mao Hongling); Fang CB (Fang Cebao); Wang JX (Wang Junxi); Ran JX (Ran Junxue); Li HP (Li Hanping); Li JM (Li Jinmin); Wang ZG (Wang, Zhanguo)
收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29
2DEG  
Peculiar photocurrent response due to Gamma-X coupling in a GaAs/AlAs heterostructure 期刊论文  OAI收割
semiconductor science and technology, 2006, 卷号: 21, 期号: 5, 页码: 643-646
Hu B; Zheng HZ; Peng J; Li GR; Li YH
收藏  |  浏览/下载：56/0  |  提交时间：2010/04/11
Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs 期刊论文  OAI收割
chinese physics, 2006, 卷号: 15, 期号: 11, 页码: 2735-2741
Li DL (Li Dong-Lin); Zeng YP (Zeng Yi-Ping)
收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11
Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure 期刊论文  OAI收割
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 762-765
Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Wang JX (Wang Junxi); Li HP (Li Jianping); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11