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CAS IR Grid
机构
半导体研究所 [25]
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OAI收割 [25]
内容类型
期刊论文 [25]
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2012 [1]
2011 [1]
2010 [3]
2009 [4]
2008 [3]
2007 [1]
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学科主题
半导体物理 [25]
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Effect of Li-doping on the magnetic properties of ZnO with Zn vacancies
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2012, 2012, 卷号: 111, 111, 期号: 9, 页码: 93902, 93902
作者:
Gao, HX
;
Xia, JB
  |  
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2013/03/17
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
OAI收割
physics letters a, PHYSICS LETTERS A, 2011, 2011, 卷号: 375, 375, 期号: 7, 页码: 1152-1155, 1152-1155
作者:
Liu CR
;
Li JB
;
Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn
;
jbli@semi.ac.cn
  |  
收藏
  |  
浏览/下载:59/6
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提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
First Principle Calculation
Indium Nitride
Band Gap
Defect
Initio Molecular-dynamics
Augmented-wave Method
Indium Nitride
Gap
Pseudopotentials
Semiconductors
Impurities
Absorption
Defects
Alloys
Defects in gallium nitride nanowires: First principles calculations
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 108, 108, 期号: 4, 页码: art. no. 044305, Art. No. 044305
作者:
Wang ZG (Wang Zhiguo)
;
Li JB (Li Jingbo)
;
Gao F (Gao Fei)
;
Weber WJ (Weber William J.)
;
Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. E-mail Address: zgwang@uestc.edu.cn
  |  
收藏
  |  
浏览/下载:105/1
  |  
提交时间:2010/10/11
CHEMICAL-VAPOR-DEPOSITION
Chemical-vapor-deposition
Gan Nanowires
Native Defects
Complexes
Epitaxy
Growth
Arrays
GAN NANOWIRES
NATIVE DEFECTS
COMPLEXES
EPITAXY
GROWTH
ARRAYS
Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface: Polarization-induced asymmetric distribution of oxygen vacancies
期刊论文
OAI收割
physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 82, 82, 期号: 12, 页码: art. no. 125412, Art. No. 125412
作者:
Zhang LX (Zhang Lixin)
;
Zhou XF (Zhou Xiang-Feng)
;
Wang HT (Wang Hui-Tian)
;
Xu JJ (Xu Jing-Jun)
;
Li JB (Li Jingbo)
  |  
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2010/10/11
INITIO MOLECULAR-DYNAMICS
Initio Molecular-dynamics
Electron Gases
Heterostructures
Transition
ELECTRON GASES
HETEROSTRUCTURES
TRANSITION
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs
期刊论文
OAI收割
physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 82, 82, 期号: 19, 页码: art. no. 193204, Art. No. 193204
作者:
Deng HX (Deng Hui-Xiong)
;
Li JB (Li Jingbo)
;
Li SS (Li Shu-Shen)
;
Peng HW (Peng Haowei)
;
Xia JB (Xia Jian-Bai)
  |  
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/12/27
IMPURITIES
Impurities
Gaas1-xnx
Nitrogen
Gainnas
States
Traps
GAAS1-XNX
NITROGEN
GAINNAS
STATES
TRAPS
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
OAI收割
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
收藏
  |  
浏览/下载:70/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Controlling electronic structures by irradiation in single-walled SiC nanotubes: a first-principles molecular dynamics study
期刊论文
OAI收割
nanotechnology, 2009, 卷号: 20, 期号: 7, 页码: art. no. 075708
作者:
Li JB
收藏
  |  
浏览/下载:164/21
  |  
提交时间:2010/03/08
CHEMICAL-VAPOR-DEPOSITION
SILICON-CARBIDE NANOTUBES
FORMATION ENERGIES
CARBON NANOTUBES
BORON-NITRIDE
NANOWIRES
COMPOSITES
DEFECTS
FUSION
Possible origin of ferromagnetism in undoped anatase TiO2
期刊论文
OAI收割
physical review b, 2009, 卷号: 79, 期号: 9, 页码: art. no. 092411
作者:
Li JB
收藏
  |  
浏览/下载:72/34
  |  
提交时间:2010/03/08
ab initio calculations
ferromagnetic materials
magnetic moments
magnetic semiconductors
titanium compounds
vacancies (crystal)
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films
期刊论文
OAI收割
applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901
作者:
Yang H
;
Wang H
;
Wang H
;
Wang YT
;
Yang H
收藏
  |  
浏览/下载:64/1
  |  
提交时间:2010/03/08
edge dislocations
gallium compounds
III-V semiconductors
impurities
photoluminescence
semiconductor doping
semiconductor thin films
silicon
wide band gap semiconductors
X-ray diffraction
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
OAI收割
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
收藏
  |  
浏览/下载:217/56
  |  
提交时间:2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)