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The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN 期刊论文  OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2014, 2014, 卷号: 116, 116, 期号: 16, 页码: 163708, 163708
作者:  Li, X. J.;  Zhao, D. G.;  Jiang, D. S.;  Liu, Z. S.;  Chen, P.
  |  收藏  |  浏览/下载：18/0  |  提交时间：2015/03/19
Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots 期刊论文  OAI收割
journal of applied physics, 2013, 卷号: 114, 期号: 9, 页码: 093105
Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B.Wang, and H. Yang
收藏  |  浏览/下载：22/0  |  提交时间：2014/04/30
Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth 期刊论文  OAI收割
ecs solid state lett., ECS Solid State Lett., 2013, 2013, 卷号: 2, 2, 期号: 9, 页码: 73-75, 73-75
作者:  J. J. Wen, Z. Liu, L. L. Li, C. Li, C. L. Xue, Y. H. Zuo, C. B. Li, Q. M. Wang and B. W. Chengz
  |  收藏  |  浏览/下载：17/0  |  提交时间：2014/04/04
Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness 期刊论文  OAI收割
journal of applied physics, Journal of Applied Physics, 2013, 2013, 卷号: 114, 114, 期号: 14, 页码: 143706, 143706
作者:  Le, L. C.;  Zhao, D. G.;  Jiang, D. S.;  Li, L.;  Wu, L. L.
  |  收藏  |  浏览/下载：11/0  |  提交时间：2014/04/09
High efficient GaN-based laser diodes with tunnel junction 期刊论文  OAI收割
applied physics letters, Applied Physics Letters, 2013, 2013, 卷号: 103, 103, 期号: 4, 页码: 043508, 043508
作者:  M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang
  |  收藏  |  浏览/下载：17/0  |  提交时间：2014/04/09
Effect of light Si-doping on the near-band-edge emissions in high quality GaN 期刊论文  OAI收割
journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 053104
Le LC (Le, L. C.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Wu LL (Wu, L. L.); Li L (Li, L.); Chen P (Chen, P.); Liu ZS (Liu, Z. S.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.)
收藏  |  浏览/下载：7/0  |  提交时间：2013/04/02
Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition 期刊论文  OAI收割
journal of alloys and compounds, 2012, 卷号: 540, 页码: 46-48
Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Le LC (Le, L. C.); Wu LL (Wu, L. L.); Li L (Li, L.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Jia QJ (Jia, Q. J.); Yang H (Yang, Hui)
收藏  |  浏览/下载：12/0  |  提交时间：2013/03/27
Positive and negative effects of oxygen in thermal annealing of p-type GaN 期刊论文  OAI收割
semiconductor science and technology, 2012, 卷号: 27, 期号: 8, 页码: 085017
Wu LL (Wu, L. L.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Chen P (Chen, P.); Le LC (Le, L. C.); Li L (Li, L.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang BS (Zhang, B. S.); Yang H (Yang, H.)
收藏  |  浏览/下载：7/0  |  提交时间：2013/04/02
Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文  OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2012, 2012, 卷号: 101, 101, 期号: 25, 页码: 252110, 252110
作者:  Le LC (Le, L. C.);  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Zhang SM (Zhang, S. M.);  Yang H (Yang, H.)
  |  收藏  |  浏览/下载：17/0  |  提交时间：2013/03/20
High electrical-to-green efficiency high stability intracavity-frequency-doubled Nd:YAG-LBO QCW 532 nm laser with a straight cavity 期刊论文  OAI收割
laser physics letters, LASER PHYSICS LETTERS, 2010, 2010, 卷号: 7, 7, 期号: 10, 页码: 707-710, 707-710
作者:  Zhang SB (Zhang Sh B.);  Cui QJ (Cui Q. J.);  Xiong B (Xiong B.);  Guo L (Guo L.);  Hou W (Hou W.)
  |  收藏  |  浏览/下载：37/0  |  提交时间：2010/11/02