中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [10]
采集方式
OAI收割 [10]
内容类型
期刊论文 [9]
会议论文 [1]
发表日期
2011 [8]
2005 [1]
1999 [1]
学科主题
半导体材料 [10]
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Behavioural investigation of InN nanodots by surface topographies and phase images
期刊论文
OAI收割
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 44, 页码: 445306
Deng, QW
;
Wang, XL
;
Xiao, HL
;
Wang, CM
;
Yin, HB
;
Chen, H
;
Lin, DF
;
Li, JM
;
Wang, ZG
;
Hou, X
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2012/01/06
QUANTUM DOTS
SOLAR-CELLS
GROWTH
FILMS
GAN
Comparison of as-grown and annealed GaN/InGaN:Mg samples
期刊论文
OAI收割
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101
Deng QW
;
Wang XL
;
Xiao HL
;
Wang CM
;
Yin HB
;
Chen H
;
Lin DF
;
Jiang LJ
;
Feng C
;
Li JM
;
Wang ZG
;
Hou X
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2012/01/06
LIGHT-EMITTING-DIODES
VAPOR-PHASE EPITAXY
BAND-GAP
MG
PHOTOLUMINESCENCE
INGAN
DEPENDENCE
STRAIN
ENERGY
INN
An investigation on InxGa1-xN/GaN multiple quantum well solar cells
期刊论文
OAI收割
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 26, 页码: art. no. 265103
作者:
Yin HB
;
Lin DF
;
Hou QF
;
Deng QW
收藏
  |  
浏览/下载:36/2
  |  
提交时间:2011/07/07
FUNDAMENTAL-BAND GAP
PHASE-SEPARATION
EFFICIENCY
INN
EMISSION
LAYERS
MODEL
The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure
期刊论文
OAI收割
european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102
Bi Y
;
Wang XL
;
Xiao HL
;
Wang CM
;
Peng EC
;
Lin DF
;
Feng C
;
Jiang LJ
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2012/01/06
ALGAN/GAN/INGAN/GAN DH-HEMTS
FIELD-EFFECT TRANSISTORS
ALGAN/GAN
POLARIZATION
PASSIVATION
HFETS
GHZ
The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors
期刊论文
OAI收割
european physical journal-applied physics, 2011, 卷号: 55, 期号: 3, 页码: 30104
作者:
Deng QW
;
Hou QF
;
Bi Y
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2011/09/14
GAN
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure
期刊论文
OAI收割
applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:
Bi Y
;
Lin DF
;
Peng EC
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2011/09/14
2-DIMENSIONAL ELECTRON-GAS
ALGAN/GAN/INGAN/GAN DH-HEMTS
MILLIMETER-WAVE APPLICATIONS
FIELD-EFFECT TRANSISTORS
HETEROJUNCTION FETS
HETEROSTRUCTURES
PASSIVATION
CONFINEMENT
PERFORMANCE
BARRIERS
An investigation on In(x)Ga(1-x)N/GaN multiple quantum well solar cells
期刊论文
OAI收割
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 26, 页码: 265103
Deng QW
;
Wang XL
;
Xiao HL
;
Wang CM
;
Yin HB
;
Chen H
;
Hou QF
;
Lin DF
;
Li JM
;
Wang ZG
;
Hou X
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2012/01/06
FUNDAMENTAL-BAND GAP
PHASE-SEPARATION
EFFICIENCY
INN
EMISSION
LAYERS
MODEL
Low temperature characteristics of AlGaN/GaN high electron mobility transistors
期刊论文
OAI收割
european physical journal-applied physics, 2011, 卷号: 56, 期号: 1, 页码: 10101
Lin DF (Lin D. F.)
;
Wang XL (Wang X. L.)
;
Xiao HL (Xiao H. L.)
;
Wang CM (Wang C. M.)
;
Qiang LJ (Qiang L. J.)
;
Feng C (Feng C.)
;
Chen H (Chen H.)
;
Hou QF (Hou Q. F.)
;
Deng QW (Deng Q. W.)
;
Bi Y (Bi Y.)
;
Kang H (Kang H.)
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2012/02/21
Growth of aligned single-walled carbon nanotubes under ac electric fields through floating catalyst chemical vapour deposition
期刊论文
OAI收割
chinese physics, 2005, 卷号: 14, 期号: 10, 页码: 2068-2076
作者:
Tan PH
收藏
  |  
浏览/下载:153/16
  |  
提交时间:2010/03/17
carbon nanotube
Preparation and characterization of erbium doped sol-gel silica glasses
会议论文
OAI收割
conference on rare-earth-doped materials and devices iii, san jose, ca, jan 27-28, 1999
Lei HB
;
Yang QQ
;
Ou HY
;
Chen BW
;
Yu JZ
;
Wang QM
;
Xie DT
;
Wu JG
;
Xu DF
;
Xu GX
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/10/29
Er-doped silica glass
sol-gel process
photoluminescence
PLANAR WAVE-GUIDES
MOLECULAR-BEAM EPITAXY
CRYSTAL SILICON
IMPLANTED SI
LUMINESCENCE
ELECTROLUMINESCENCE
FABRICATION
IMPURITIES
FILMS
IONS