机构

• 半导体研究所 [13]

采集方式

• OAI收割 [13]

内容类型

• 期刊论文 [8]
• 会议论文 [5]

发表日期

• 2011 [1]
• 2010 [1]
• 2009 [1]
• 2008 [3]
• 2007 [1]
• 2006 [1]
• 更多

学科主题

• 半导体材料 [13]

筛选

浏览/检索结果: 共13条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 2, 页码: article no.28402 作者:  Hou QF;  Yin HB 收藏  |  浏览/下载：43/6  |  提交时间：2011/07/05 InGaN  solar cell  multiple quantum wells  IN1-XGAXN ALLOYS  BAND-GAP  INN   Tandem organic light-emitting diodes with an effective charge-generation connection structure 期刊论文  OAI收割 solid state communications, 2010, 卷号: 150, 期号: 35-36, 页码: 1683-1685 Li LS (Li Linsen); Guan M (Guan Min); Cao GH (Cao Guohua); Li YY (Li Yiyang); Zeng YP (Zeng Yiping) 收藏  |  浏览/下载：238/43  |  提交时间：2010/09/20 Organic light-emitting diodes  Tandem  Charge generation   An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文  OAI收割 solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335 作者:  Zhang ML;  Hou QF 收藏  |  浏览/下载：129/30  |  提交时间：2010/03/08 AlGaN/AlN/GaN  HEMT  MOCVD  SiC substrate  Power device   AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文  OAI收割 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 作者:  Hou QF;  Zhang ML 收藏  |  浏览/下载：51/0  |  提交时间：2010/03/09 ALGAN/GAN HEMTS   High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz 期刊论文  OAI收割 solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 926-929 Wang, XL; Chen, TS; Xiao, HL; Wang, CM; Hu, GX; Luo, WJ; Tang, J; Guo, LC; Li, JM 收藏  |  浏览/下载：77/1  |  提交时间：2010/03/08 AlGaN/AlN/GaN  HEMTs  SiC  power   Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching 期刊论文  OAI收割 solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 962-967 Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP; Wang, GH 收藏  |  浏览/下载：58/4  |  提交时间：2010/03/08 InGaN/GaN multiple quantum wells  light-emitting diode  wet etching  inductively coupled plasma etching   Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers 会议论文  OAI收割 33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Ning, J (Ning, J.); Zhao, YM (Zhao, Y. M.); Luo, MC (Luo, M. C.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：89/9  |  提交时间：2010/03/29 AVALANCHE PHOTODIODES  AREA   1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots 会议论文  OAI收割 4th international conference on silicon epitaxy and heterostructures, awaji isl, japan, may 23-26, 2005 Yu, J; Kasper, E; Oehme, M 收藏  |  浏览/下载：146/20  |  提交时间：2010/03/29 SiGe   Semi-insulating GaAs grown in outer space 期刊论文  OAI收割 materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 75, 期号: 2-3, 页码: 134-138 Chen NF; Zhong XR; Lin LY; Xie X; Zhang M 收藏  |  浏览/下载：53/0  |  提交时间：2010/08/12 GaAs  outer space  microgravity  integrated circuit  SEMIINSULATING GALLIUM-ARSENIDE  LEC-GAAS  DEFECTS  STOICHIOMETRY  SEGREGATION  CARBON  BORON   Semi-insulating GaAs grown in outer space 会议论文  OAI收割 iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999 Chen NF; Zhong XR; Lin LY; Xie X; Zhang M 收藏  |  浏览/下载：20/0  |  提交时间：2010/11/15 GaAs  outer space  microgravity  integrated circuit  SEMIINSULATING GALLIUM-ARSENIDE  LEC-GAAS  DEFECTS  STOICHIOMETRY  SEGREGATION  CARBON  BORON